misc local modifications
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@@ -0,0 +1,197 @@
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*version 8.0 355263187
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||||
@index
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symloc DMOS 0 1038 b
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||||
symloc IPD12CN10N_L0:DMOS 1038 289
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||||
symloc IPD16CN10N_L0:DMOS 1327 289
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||||
symloc IPD25CN10N_L0:DMOS 1616 289
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||||
symloc IPD33CN10N_L0:DMOS 1905 289
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||||
symloc IPD49CN10N_L0:DMOS 2194 289
|
||||
symloc IPD78CN10N_L0:DMOS 2483 289
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||||
symloc BSC079N10NS_L0:DMOS 2772 292
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||||
symloc BSC118N10NS_L0:DMOS 3064 292
|
||||
symloc BSC196N10NS_L0:DMOS 3356 292
|
||||
symloc IPD64CN10N_L0:DMOS 3648 289
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||||
symloc BSC100N10NSF_L0:DMOS 3937 295
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||||
symloc BSC152N10NSF_L0:DMOS 4232 295
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||||
symloc BSC252N10NSF_L0:DMOS 4527 295
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||||
symloc BSC750N10ND_L0:DMOS 4822 292
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||||
*symbol DMOS b
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||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
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a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
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@pins
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||||
p 0 25 40 hcn 100 source n 30 40 v
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||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
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||||
a 0 s 0 0 0 0 hln 100 ERC=x
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||||
p 0 10 20 hcn 100 gate n 0 20 h
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a 0 s 0:1 0 1 18 hln 100 PIN=2
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||||
a 0 s 0 0 0 0 hln 100 ERC=x
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p 0 25 10 hcn 100 drain n 30 0 d
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a 0 s 0:1 0 31 -2 hln 100 PIN=1
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||||
a 0 s 0 0 0 0 hln 100 ERC=x
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@graphics 46 40 0 20 10
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c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
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v 0 38 10
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38 30
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28 30
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;
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||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
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35 22
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||||
41 22
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||||
38 18
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;
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v 0 25 16
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20 20
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;
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v 0 20 20
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25 24
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;
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r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
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c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
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c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
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v 0 30 20
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30 30
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;
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v 0 30 20
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20 20
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;
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v 0 38 10
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30 10
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||||
;
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v 0 15 10
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15 30
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;
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v 0 10 20
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15 20
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;
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v 0 20 10
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30 10
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;
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v 0 20 30
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30 30
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||||
;
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v 0 20 23
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20 17
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;
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v 0 20 33
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20 27
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;
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v 0 20 13
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20 7
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||||
;
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*symbol IPD12CN10N_L0 ako DMOS
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d Infineon n-channel DMOS transistor
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@type p 8.0
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@attributes
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||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
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a 0 s 9 0 61 12 hcn 100 REFDES=X?
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||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD12CN10N_L0
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a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD12CN10N_L0
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||||
*symbol IPD16CN10N_L0 ako DMOS
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d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
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||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
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||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
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||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD16CN10N_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD16CN10N_L0
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||||
*symbol IPD25CN10N_L0 ako DMOS
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||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD25CN10N_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD25CN10N_L0
|
||||
*symbol IPD33CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD33CN10N_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD33CN10N_L0
|
||||
*symbol IPD49CN10N_L0 ako DMOS
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||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD49CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD49CN10N_L0
|
||||
*symbol IPD78CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD78CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD78CN10N_L0
|
||||
*symbol BSC079N10NS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC079N10NS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC079N10NS_L0
|
||||
*symbol BSC118N10NS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC118N10NS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC118N10NS_L0
|
||||
*symbol BSC196N10NS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC196N10NS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC196N10NS_L0
|
||||
*symbol IPD64CN10N_L0 ako DMOS
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||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD64CN10N_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD64CN10N_L0
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||||
*symbol BSC100N10NSF_L0 ako DMOS
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||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC100N10NSF_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC100N10NSF_L0
|
||||
*symbol BSC152N10NSF_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
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||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC152N10NSF_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC152N10NSF_L0
|
||||
*symbol BSC252N10NSF_L0 ako DMOS
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||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC252N10NSF_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC252N10NSF_L0
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||||
*symbol BSC750N10ND_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC750N10ND_L0
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||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC750N10ND_L0
|
||||
@@ -0,0 +1,302 @@
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*version 8.0 3518319357
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
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||||
symloc IPD12CN10N_L1:DMOS_S2_L1_n 1402 626
|
||||
symloc IPD16CN10N_L1:DMOS_S2_L1_n 2028 626
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||||
symloc IPD25CN10N_L1:DMOS_S2_L1_n 2654 628
|
||||
symloc IPD33CN10N_L1:DMOS_S2_L1_n 3282 628
|
||||
symloc IPD49CN10N_L1:DMOS_S2_L1_n 3910 628
|
||||
symloc IPD78CN10N_L1:DMOS_S2_L1_n 4538 628
|
||||
symloc BSC079N10NS_L1:DMOS_S2_L1_n 5166 631
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||||
symloc BSC118N10NS_L1:DMOS_S2_L1_n 5797 631
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||||
symloc BSC196N10NS_L1:DMOS_S2_L1_n 6428 631
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||||
symloc IPD64CN10N_L1:DMOS_S2_L1_n 7059 628
|
||||
symloc BSC100N10NSF_L1:DMOS_S2_L1_n 7687 634
|
||||
symloc BSC152N10NSF_L1:DMOS_S2_L1_n 8321 634
|
||||
symloc BSC252N10NSF_L1:DMOS_S2_L1_n 8955 634
|
||||
symloc BSC750N10ND_L1:DMOS_S2_L1_n 9589 631
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
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||||
20 20
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||||
;
|
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v 0 20 20
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||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPD12CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD12CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD12CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD16CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD16CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD16CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD25CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD25CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD25CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD33CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD33CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD33CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD49CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD49CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD49CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD78CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD78CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD78CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC079N10NS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC079N10NS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC079N10NS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC118N10NS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC118N10NS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC118N10NS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC196N10NS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC196N10NS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC196N10NS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol IPD64CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD64CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD64CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC100N10NSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC100N10NSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC100N10NSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC152N10NSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC152N10NSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC152N10NSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC252N10NSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC252N10NSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC252N10NSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC750N10ND_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC750N10ND_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC750N10ND_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
@@ -0,0 +1,328 @@
|
||||
*version 8.0 3518319357
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc IPD12CN10N:DMOS_S2_L3_n 1796 691
|
||||
symloc IPD16CN10N:DMOS_S2_L3_n 2487 691
|
||||
symloc IPD25CN10N:DMOS_S2_L3_n 3178 693
|
||||
symloc IPD33CN10N:DMOS_S2_L3_n 3871 693
|
||||
symloc IPD49CN10N:DMOS_S2_L3_n 4564 693
|
||||
symloc IPD78CN10N:DMOS_S2_L3_n 5257 693
|
||||
symloc BSC079N10NS:DMOS_S2_L3_n 5950 696
|
||||
symloc BSC118N10NS:DMOS_S2_L3_n 6646 696
|
||||
symloc BSC196N10NS:DMOS_S2_L3_n 7342 696
|
||||
symloc IPD64CN10N:DMOS_S2_L3_n 8038 693
|
||||
symloc BSC100N10NSF:DMOS_S2_L3_n 8731 699
|
||||
symloc BSC152N10NSF:DMOS_S2_L3_n 9430 699
|
||||
symloc BSC252N10NSF:DMOS_S2_L3_n 10129 699
|
||||
symloc BSC750N10ND:DMOS_S2_L3_n 10828 696
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPD12CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD12CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD12CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD16CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD16CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD16CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD25CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD25CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD25CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD33CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD33CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD33CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD49CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD49CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD49CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPD78CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD78CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD78CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC079N10NS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC079N10NS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC079N10NS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC118N10NS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC118N10NS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC118N10NS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC196N10NS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC196N10NS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC196N10NS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol IPD64CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD64CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD64CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC100N10NSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC100N10NSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC100N10NSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC152N10NSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC152N10NSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC152N10NSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC252N10NSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC252N10NSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC252N10NSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC750N10ND ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC750N10ND
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC750N10ND
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
@@ -0,0 +1,179 @@
|
||||
*version 9.1 2625222009
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc IPP05CN10L_L0:DMOS 1038 289
|
||||
symloc IPP06CN10L_L0:DMOS 1327 289
|
||||
symloc IPP08CN10L_L0:DMOS 1616 289
|
||||
symloc IPP12CN10L_L0:DMOS 1905 289
|
||||
symloc IPS12CN10L_L0:DMOS 2194 289
|
||||
symloc IPP16CN10L_L0:DMOS 2483 289
|
||||
symloc BSC082N10LS_L0:DMOS 2772 292
|
||||
symloc BSC123N10LS_L0:DMOS 3064 292
|
||||
symloc BSC205N10LS_L0:DMOS 3356 292
|
||||
symloc BSC105N10LSF_L0:DMOS 3648 295
|
||||
symloc BSC159N10LSF_L0:DMOS 3943 295
|
||||
symloc BSC265N10LSF_L0:DMOS 4238 295
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPP05CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP05CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP05CN10L_L0
|
||||
*symbol IPP06CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP06CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP06CN10L_L0
|
||||
*symbol IPP08CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP08CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP08CN10L_L0
|
||||
*symbol IPP12CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP12CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP12CN10L_L0
|
||||
*symbol IPS12CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPS12CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPS12CN10L_L0
|
||||
*symbol IPP16CN10L_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP16CN10L_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP16CN10L_L0
|
||||
*symbol BSC082N10LS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC082N10LS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC082N10LS_L0
|
||||
*symbol BSC123N10LS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC123N10LS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC123N10LS_L0
|
||||
*symbol BSC205N10LS_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC205N10LS_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC205N10LS_L0
|
||||
*symbol BSC105N10LSF_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC105N10LSF_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC105N10LSF_L0
|
||||
*symbol BSC159N10LSF_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC159N10LSF_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC159N10LSF_L0
|
||||
*symbol BSC265N10LSF_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC265N10LSF_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC265N10LSF_L0
|
||||
@@ -0,0 +1,270 @@
|
||||
*version 9.1 870567026
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc IPP05CN10L_L1:DMOS_S2_L1_n 1402 626
|
||||
symloc IPP06CN10L_L1:DMOS_S2_L1_n 2028 626
|
||||
symloc IPP08CN10L_L1:DMOS_S2_L1_n 2654 626
|
||||
symloc IPP12CN10L_L1:DMOS_S2_L1_n 3280 626
|
||||
symloc IPS12CN10L_L1:DMOS_S2_L1_n 3906 626
|
||||
symloc IPP16CN10L_L1:DMOS_S2_L1_n 4532 626
|
||||
symloc BSC082N10LS_L1:DMOS_S2_L1_n 5158 631
|
||||
symloc BSC123N10LS_L1:DMOS_S2_L1_n 5789 631
|
||||
symloc BSC205N10LS_L1:DMOS_S2_L1_n 6420 631
|
||||
symloc BSC105N10LSF_L1:DMOS_S2_L1_n 7051 634
|
||||
symloc BSC159N10LSF_L1:DMOS_S2_L1_n 7685 634
|
||||
symloc BSC265N10LSF_L1:DMOS_S2_L1_n 8319 634
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPP05CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP05CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP05CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP06CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP06CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP06CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP08CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP08CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP08CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP12CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP12CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP12CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPS12CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPS12CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPS12CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPP16CN10L_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP16CN10L_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP16CN10L_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC082N10LS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC082N10LS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC082N10LS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC123N10LS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC123N10LS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC123N10LS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC205N10LS_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC205N10LS_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC205N10LS_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC105N10LSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC105N10LSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC105N10LSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC159N10LSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC159N10LSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC159N10LSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC265N10LSF_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC265N10LSF_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC265N10LSF_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
@@ -0,0 +1,294 @@
|
||||
*version 9.1 162033701
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc IPP05CN10L:DMOS_S2_L3_n 1796 691
|
||||
symloc IPP06CN10L:DMOS_S2_L3_n 2487 691
|
||||
symloc IPP08CN10L:DMOS_S2_L3_n 3178 691
|
||||
symloc IPP12CN10L:DMOS_S2_L3_n 3869 691
|
||||
symloc IPS12CN10L:DMOS_S2_L3_n 4560 691
|
||||
symloc IPP16CN10L:DMOS_S2_L3_n 5251 691
|
||||
symloc BSC082N10LS:DMOS_S2_L3_n 5942 696
|
||||
symloc BSC123N10LS:DMOS_S2_L3_n 6638 696
|
||||
symloc BSC205N10LS:DMOS_S2_L3_n 7334 696
|
||||
symloc BSC105N10LSF:DMOS_S2_L3_n 8030 699
|
||||
symloc BSC159N10LSF:DMOS_S2_L3_n 8729 699
|
||||
symloc BSC265N10LSF:DMOS_S2_L3_n 9428 699
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPP05CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP05CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP05CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP06CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP06CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP06CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP08CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP08CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP08CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP12CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP12CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP12CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPS12CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPS12CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPS12CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPP16CN10L ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP16CN10L
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP16CN10L
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC082N10LS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC082N10LS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC082N10LS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC123N10LS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC123N10LS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC123N10LS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC205N10LS ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC205N10LS
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC205N10LS
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC105N10LSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC105N10LSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC105N10LSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC159N10LSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC159N10LSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC159N10LSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
*symbol BSC265N10LSF ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC265N10LSF
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC265N10LSF
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=2n
|
||||
@@ -0,0 +1,215 @@
|
||||
*version 8.0 856205713
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc IPB04CN10N_L0:DMOS 1038 289
|
||||
symloc IPB05CN10N_L0:DMOS 1327 289
|
||||
symloc IPB06CN10N_L0:DMOS 1616 289
|
||||
symloc IPB08CN10N_L0:DMOS 1905 289
|
||||
symloc IPB12CN10N_L0:DMOS 2194 289
|
||||
symloc IPB16CN10N_L0:DMOS 2483 289
|
||||
symloc IPP04CN10N_L0:DMOS 2772 289
|
||||
symloc IPP05CN10N_L0:DMOS 3061 289
|
||||
symloc IPP06CN10N_L0:DMOS 3350 289
|
||||
symloc IPP08CN10N_L0:DMOS 3639 289
|
||||
symloc IPP12CN10N_L0:DMOS 3928 289
|
||||
symloc IPP16CN10N_L0:DMOS 4217 289
|
||||
symloc IPP26CN10N_L0:DMOS 4506 289
|
||||
symloc IPP35CN10N_L0:DMOS 4795 289
|
||||
symloc IPP50CN10N_L0:DMOS 5084 289
|
||||
symloc IPP80CN10N_L0:DMOS 5373 289
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPB04CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB04CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB04CN10N_L0
|
||||
*symbol IPB05CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB05CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB05CN10N_L0
|
||||
*symbol IPB06CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB06CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB06CN10N_L0
|
||||
*symbol IPB08CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB08CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB08CN10N_L0
|
||||
*symbol IPB12CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB12CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB12CN10N_L0
|
||||
*symbol IPB16CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB16CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB16CN10N_L0
|
||||
*symbol IPP04CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP04CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP04CN10N_L0
|
||||
*symbol IPP05CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP05CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP05CN10N_L0
|
||||
*symbol IPP06CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP06CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP06CN10N_L0
|
||||
*symbol IPP08CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP08CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP08CN10N_L0
|
||||
*symbol IPP12CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP12CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP12CN10N_L0
|
||||
*symbol IPP16CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP16CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP16CN10N_L0
|
||||
*symbol IPP26CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP26CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP26CN10N_L0
|
||||
*symbol IPP35CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP35CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP35CN10N_L0
|
||||
*symbol IPP50CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP50CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP50CN10N_L0
|
||||
*symbol IPP80CN10N_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP80CN10N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP80CN10N_L0
|
||||
@@ -0,0 +1,334 @@
|
||||
*version 8.0 99324507
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc IPB04CN10N_L1:DMOS_S2_L1_n 1402 626
|
||||
symloc IPB05CN10N_L1:DMOS_S2_L1_n 2028 626
|
||||
symloc IPB06CN10N_L1:DMOS_S2_L1_n 2654 626
|
||||
symloc IPB08CN10N_L1:DMOS_S2_L1_n 3280 626
|
||||
symloc IPB12CN10N_L1:DMOS_S2_L1_n 3906 626
|
||||
symloc IPB16CN10N_L1:DMOS_S2_L1_n 4532 626
|
||||
symloc IPP04CN10N_L1:DMOS_S2_L1_n 5158 626
|
||||
symloc IPP05CN10N_L1:DMOS_S2_L1_n 5784 626
|
||||
symloc IPP06CN10N_L1:DMOS_S2_L1_n 6410 626
|
||||
symloc IPP08CN10N_L1:DMOS_S2_L1_n 7036 626
|
||||
symloc IPP12CN10N_L1:DMOS_S2_L1_n 7662 626
|
||||
symloc IPP16CN10N_L1:DMOS_S2_L1_n 8288 626
|
||||
symloc IPP26CN10N_L1:DMOS_S2_L1_n 8914 626
|
||||
symloc IPP35CN10N_L1:DMOS_S2_L1_n 9540 626
|
||||
symloc IPP50CN10N_L1:DMOS_S2_L1_n 10166 626
|
||||
symloc IPP80CN10N_L1:DMOS_S2_L1_n 10792 626
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPB04CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB04CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB04CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB05CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB05CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB05CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB06CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB06CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB06CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB08CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB08CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB08CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB12CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB12CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB12CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB16CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB16CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB16CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP04CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP04CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP04CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP05CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP05CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP05CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP06CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP06CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP06CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP08CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP08CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP08CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP12CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP12CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP12CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP16CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP16CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP16CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP26CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP26CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP26CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP35CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP35CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP35CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP50CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP50CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP50CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP80CN10N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP80CN10N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP80CN10N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
@@ -0,0 +1,362 @@
|
||||
*version 8.0 292739952
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc IPB04CN10N:DMOS_S2_L3_n 1796 691
|
||||
symloc IPB05CN10N:DMOS_S2_L3_n 2487 691
|
||||
symloc IPB06CN10N:DMOS_S2_L3_n 3178 691
|
||||
symloc IPB08CN10N:DMOS_S2_L3_n 3869 691
|
||||
symloc IPB12CN10N:DMOS_S2_L3_n 4560 691
|
||||
symloc IPB16CN10N:DMOS_S2_L3_n 5251 691
|
||||
symloc IPP04CN10N:DMOS_S2_L3_n 5942 691
|
||||
symloc IPP05CN10N:DMOS_S2_L3_n 6633 691
|
||||
symloc IPP06CN10N:DMOS_S2_L3_n 7324 691
|
||||
symloc IPP08CN10N:DMOS_S2_L3_n 8015 691
|
||||
symloc IPP12CN10N:DMOS_S2_L3_n 8706 691
|
||||
symloc IPP16CN10N:DMOS_S2_L3_n 9397 691
|
||||
symloc IPP26CN10N:DMOS_S2_L3_n 10088 691
|
||||
symloc IPP35CN10N:DMOS_S2_L3_n 10779 691
|
||||
symloc IPP50CN10N:DMOS_S2_L3_n 11470 691
|
||||
symloc IPP80CN10N:DMOS_S2_L3_n 12161 691
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPB04CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB04CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB04CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB05CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB05CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB05CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB06CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB06CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB06CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB08CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB08CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB08CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB12CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB12CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB12CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB16CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB16CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB16CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP04CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP04CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP04CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP05CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP05CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP05CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP06CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP06CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP06CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP08CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP08CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP08CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP12CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP12CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP12CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP16CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP16CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP16CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=4n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP26CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP26CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP26CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP35CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP35CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP35CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP50CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP50CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP50CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP80CN10N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP80CN10N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP80CN10N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
Binary file not shown.
File diff suppressed because it is too large
Load Diff
@@ -0,0 +1,170 @@
|
||||
*version 9.1 201173875
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc BSC060N10NS3_L0:DMOS 1038 295
|
||||
symloc BSC160N10NS3_L0:DMOS 1333 295
|
||||
symloc BSZ160N10NS3_L0:DMOS 1628 295
|
||||
symloc BSC440N10NS3_L0:DMOS 1923 295
|
||||
symloc BSZ440N10NS3_L0:DMOS 2218 295
|
||||
symloc BSC046N10NS3_L0:DMOS 2513 295
|
||||
symloc BSC070N10NS3_L0:DMOS 2808 295
|
||||
symloc BSC109N10NS3_L0:DMOS 3103 295
|
||||
symloc BSB056N10NN3_L0:DMOS 3398 295
|
||||
symloc BSF134N10NJ3_L0:DMOS 3693 295
|
||||
symloc BSZ150N10LS3_L0:DMOS 3988 295
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSC060N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC060N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC060N10NS3_L0
|
||||
*symbol BSC160N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC160N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC160N10NS3_L0
|
||||
*symbol BSZ160N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSZ160N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ160N10NS3_L0
|
||||
*symbol BSC440N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC440N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC440N10NS3_L0
|
||||
*symbol BSZ440N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSZ440N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ440N10NS3_L0
|
||||
*symbol BSC046N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC046N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC046N10NS3_L0
|
||||
*symbol BSC070N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC070N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC070N10NS3_L0
|
||||
*symbol BSC109N10NS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC109N10NS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC109N10NS3_L0
|
||||
*symbol BSB056N10NN3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSB056N10NN3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSB056N10NN3_L0
|
||||
*symbol BSF134N10NJ3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSF134N10NJ3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSF134N10NJ3_L0
|
||||
*symbol BSZ150N10LS3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSZ150N10LS3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ150N10LS3_L0
|
||||
@@ -0,0 +1,254 @@
|
||||
*version 9.1 1224434252
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc BSC060N10NS3_L1:DMOS_S2_L1_n 1402 632
|
||||
symloc BSC160N10NS3_L1:DMOS_S2_L1_n 2034 632
|
||||
symloc BSZ160N10NS3_L1:DMOS_S2_L1_n 2666 632
|
||||
symloc BSC440N10NS3_L1:DMOS_S2_L1_n 3298 632
|
||||
symloc BSZ440N10NS3_L1:DMOS_S2_L1_n 3930 632
|
||||
symloc BSC046N10NS3_L1:DMOS_S2_L1_n 4562 632
|
||||
symloc BSC070N10NS3_L1:DMOS_S2_L1_n 5194 632
|
||||
symloc BSC109N10NS3_L1:DMOS_S2_L1_n 5826 632
|
||||
symloc BSB056N10NN3_L1:DMOS_S2_L1_n 6458 639
|
||||
symloc BSF134N10NJ3_L1:DMOS_S2_L1_n 7097 639
|
||||
symloc BSZ150N10LS3_L1:DMOS_S2_L1_n 7736 632
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSC060N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC060N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC060N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC160N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC160N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC160N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSZ160N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSZ160N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ160N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC440N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC440N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC440N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSZ440N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSZ440N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ440N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC046N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC046N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC046N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC070N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC070N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC070N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC109N10NS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC109N10NS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC109N10NS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSB056N10NN3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSB056N10NN3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSB056N10NN3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.05n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.7n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=0.1n
|
||||
*symbol BSF134N10NJ3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSF134N10NJ3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSF134N10NJ3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.05n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.7n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=0.1n
|
||||
*symbol BSZ150N10LS3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSZ150N10LS3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ150N10LS3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@@ -0,0 +1,277 @@
|
||||
*version 9.1 69128771
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc BSC060N10NS3:DMOS_S2_L3_n 1796 697
|
||||
symloc BSC160N10NS3:DMOS_S2_L3_n 2493 697
|
||||
symloc BSZ160N10NS3:DMOS_S2_L3_n 3190 697
|
||||
symloc BSC440N10NS3:DMOS_S2_L3_n 3887 697
|
||||
symloc BSZ440N10NS3:DMOS_S2_L3_n 4584 697
|
||||
symloc BSC046N10NS3:DMOS_S2_L3_n 5281 697
|
||||
symloc BSC070N10NS3:DMOS_S2_L3_n 5978 697
|
||||
symloc BSC109N10NS3:DMOS_S2_L3_n 6675 697
|
||||
symloc BSB056N10NN3:DMOS_S2_L3_n 7372 704
|
||||
symloc BSF134N10NJ3:DMOS_S2_L3_n 8076 704
|
||||
symloc BSZ150N10LS3:DMOS_S2_L3_n 8780 697
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol BSC060N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC060N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC060N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC160N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC160N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC160N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSZ160N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSZ160N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSZ160N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC440N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC440N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC440N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSZ440N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSZ440N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSZ440N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC046N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC046N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC046N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC070N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC070N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC070N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC109N10NS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC109N10NS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC109N10NS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSB056N10NN3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSB056N10NN3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSB056N10NN3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.05n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.7n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=0.1n
|
||||
*symbol BSF134N10NJ3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSF134N10NJ3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSF134N10NJ3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.05n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=0.7n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=0.1n
|
||||
*symbol BSZ150N10LS3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSZ150N10LS3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSZ150N10LS3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@@ -0,0 +1,206 @@
|
||||
*version 9.1 936856936
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc IPA030N10N3_L0:DMOS 1038 292
|
||||
symloc IPI030N10N3_L0:DMOS 1330 292
|
||||
symloc IPA045N10N3_L0:DMOS 1622 292
|
||||
symloc IPI045N10N3_L0:DMOS 1914 292
|
||||
symloc IPD068N10N3_L0:DMOS 2206 292
|
||||
symloc IPI072N10N3_L0:DMOS 2498 292
|
||||
symloc IPA086N10N3_L0:DMOS 2790 292
|
||||
symloc IPD082N10N3_L0:DMOS 3082 292
|
||||
symloc IPI086N10N3_L0:DMOS 3374 292
|
||||
symloc IPA126N10N3_L0:DMOS 3666 292
|
||||
symloc IPD122N10N3_L0:DMOS 3958 292
|
||||
symloc IPI126N10N3_L0:DMOS 4250 292
|
||||
symloc IPA180N10N3_L0:DMOS 4542 292
|
||||
symloc IPD180N10N3_L0:DMOS 4834 292
|
||||
symloc IPI180N10N3_L0:DMOS 5126 292
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPA030N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA030N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA030N10N3_L0
|
||||
*symbol IPI030N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI030N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI030N10N3_L0
|
||||
*symbol IPA045N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA045N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA045N10N3_L0
|
||||
*symbol IPI045N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI045N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI045N10N3_L0
|
||||
*symbol IPD068N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD068N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD068N10N3_L0
|
||||
*symbol IPI072N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI072N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI072N10N3_L0
|
||||
*symbol IPA086N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA086N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA086N10N3_L0
|
||||
*symbol IPD082N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD082N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD082N10N3_L0
|
||||
*symbol IPI086N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI086N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI086N10N3_L0
|
||||
*symbol IPA126N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA126N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA126N10N3_L0
|
||||
*symbol IPD122N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD122N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD122N10N3_L0
|
||||
*symbol IPI126N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI126N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI126N10N3_L0
|
||||
*symbol IPA180N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA180N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA180N10N3_L0
|
||||
*symbol IPD180N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPD180N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD180N10N3_L0
|
||||
*symbol IPI180N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPI180N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI180N10N3_L0
|
||||
@@ -0,0 +1,318 @@
|
||||
*version 9.1 203997478
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc IPA030N10N3_L1:DMOS_S2_L1_n 1402 633
|
||||
symloc IPI030N10N3_L1:DMOS_S2_L1_n 2035 633
|
||||
symloc IPA045N10N3_L1:DMOS_S2_L1_n 2668 633
|
||||
symloc IPI045N10N3_L1:DMOS_S2_L1_n 3301 633
|
||||
symloc IPD068N10N3_L1:DMOS_S2_L1_n 3934 631
|
||||
symloc IPI072N10N3_L1:DMOS_S2_L1_n 4565 631
|
||||
symloc IPA086N10N3_L1:DMOS_S2_L1_n 5196 631
|
||||
symloc IPD082N10N3_L1:DMOS_S2_L1_n 5827 631
|
||||
symloc IPI086N10N3_L1:DMOS_S2_L1_n 6458 631
|
||||
symloc IPA126N10N3_L1:DMOS_S2_L1_n 7089 631
|
||||
symloc IPD122N10N3_L1:DMOS_S2_L1_n 7720 631
|
||||
symloc IPI126N10N3_L1:DMOS_S2_L1_n 8351 631
|
||||
symloc IPA180N10N3_L1:DMOS_S2_L1_n 8982 633
|
||||
symloc IPD180N10N3_L1:DMOS_S2_L1_n 9615 629
|
||||
symloc IPI180N10N3_L1:DMOS_S2_L1_n 10244 633
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPA030N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA030N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA030N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPI030N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI030N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI030N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA045N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA045N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA045N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPI045N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI045N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI045N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD068N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD068N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD068N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI072N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI072N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI072N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA086N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA086N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA086N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD082N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD082N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD082N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI086N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI086N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI086N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA126N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA126N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA126N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD122N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD122N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD122N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI126N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI126N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI126N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA180N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA180N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA180N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD180N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPD180N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPD180N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI180N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPI180N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPI180N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
@@ -0,0 +1,345 @@
|
||||
*version 9.1 1960152540
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc IPA030N10N3:DMOS_S2_L3_n 1796 698
|
||||
symloc IPI030N10N3:DMOS_S2_L3_n 2494 698
|
||||
symloc IPA045N10N3:DMOS_S2_L3_n 3192 698
|
||||
symloc IPI045N10N3:DMOS_S2_L3_n 3890 698
|
||||
symloc IPD068N10N3:DMOS_S2_L3_n 4588 696
|
||||
symloc IPI072N10N3:DMOS_S2_L3_n 5284 696
|
||||
symloc IPA086N10N3:DMOS_S2_L3_n 5980 696
|
||||
symloc IPD082N10N3:DMOS_S2_L3_n 6676 696
|
||||
symloc IPI086N10N3:DMOS_S2_L3_n 7372 696
|
||||
symloc IPA126N10N3:DMOS_S2_L3_n 8068 696
|
||||
symloc IPD122N10N3:DMOS_S2_L3_n 8764 696
|
||||
symloc IPI126N10N3:DMOS_S2_L3_n 9460 696
|
||||
symloc IPA180N10N3:DMOS_S2_L3_n 10156 698
|
||||
symloc IPD180N10N3:DMOS_S2_L3_n 10854 694
|
||||
symloc IPI180N10N3:DMOS_S2_L3_n 11548 698
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPA030N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA030N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA030N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPI030N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI030N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI030N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA045N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA045N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA045N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPI045N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI045N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI045N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD068N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD068N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD068N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI072N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI072N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI072N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA086N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA086N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA086N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD082N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD082N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD082N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI086N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI086N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI086N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA126N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA126N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA126N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD122N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD122N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD122N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI126N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI126N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI126N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA180N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA180N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA180N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPD180N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPD180N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPD180N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPI180N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPI180N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPI180N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
@@ -0,0 +1,215 @@
|
||||
*version 9.1 239145096
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc IPB025N10N3_L0:DMOS 1038 292
|
||||
symloc IPB027N10N3_L0:DMOS 1330 292
|
||||
symloc IPP030N10N3_L0:DMOS 1622 292
|
||||
symloc IPB039N10N3_L0:DMOS 1914 292
|
||||
symloc IPB042N10N3_L0:DMOS 2206 292
|
||||
symloc IPP045N10N3_L0:DMOS 2498 292
|
||||
symloc IPP072N10N3_L0:DMOS 2790 292
|
||||
symloc IPB083N10N3_L0:DMOS 3082 292
|
||||
symloc IPP086N10N3_L0:DMOS 3374 292
|
||||
symloc IPP881N10N3_L0:DMOS 3666 292
|
||||
symloc IPB123N10N3_L0:DMOS 3958 292
|
||||
symloc IPP126N10N3_L0:DMOS 4250 292
|
||||
symloc IPP180N10N3_L0:DMOS 4542 292
|
||||
symloc IPP882N10N3_L0:DMOS 4834 292
|
||||
symloc IPT020N10N3_L0:DMOS 5126 292
|
||||
symloc IPB065N10N3_L0:DMOS 5418 292
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPB025N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB025N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB025N10N3_L0
|
||||
*symbol IPB027N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB027N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB027N10N3_L0
|
||||
*symbol IPP030N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP030N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP030N10N3_L0
|
||||
*symbol IPB039N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB039N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB039N10N3_L0
|
||||
*symbol IPB042N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB042N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB042N10N3_L0
|
||||
*symbol IPP045N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP045N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP045N10N3_L0
|
||||
*symbol IPP072N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP072N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP072N10N3_L0
|
||||
*symbol IPB083N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB083N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB083N10N3_L0
|
||||
*symbol IPP086N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP086N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP086N10N3_L0
|
||||
*symbol IPP881N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP881N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP881N10N3_L0
|
||||
*symbol IPB123N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB123N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB123N10N3_L0
|
||||
*symbol IPP126N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP126N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP126N10N3_L0
|
||||
*symbol IPP180N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP180N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP180N10N3_L0
|
||||
*symbol IPP882N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP882N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP882N10N3_L0
|
||||
*symbol IPT020N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPT020N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPT020N10N3_L0
|
||||
*symbol IPB065N10N3_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB065N10N3_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB065N10N3_L0
|
||||
@@ -0,0 +1,334 @@
|
||||
*version 9.1 6397678
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc IPB025N10N3_L1:DMOS_S2_L1_n 1402 631
|
||||
symloc IPB027N10N3_L1:DMOS_S2_L1_n 2033 631
|
||||
symloc IPP030N10N3_L1:DMOS_S2_L1_n 2664 633
|
||||
symloc IPB039N10N3_L1:DMOS_S2_L1_n 3297 631
|
||||
symloc IPB042N10N3_L1:DMOS_S2_L1_n 3928 631
|
||||
symloc IPP045N10N3_L1:DMOS_S2_L1_n 4559 633
|
||||
symloc IPP072N10N3_L1:DMOS_S2_L1_n 5192 631
|
||||
symloc IPB083N10N3_L1:DMOS_S2_L1_n 5823 629
|
||||
symloc IPP086N10N3_L1:DMOS_S2_L1_n 6452 631
|
||||
symloc IPP881N10N3_L1:DMOS_S2_L1_n 7083 631
|
||||
symloc IPB123N10N3_L1:DMOS_S2_L1_n 7714 629
|
||||
symloc IPP126N10N3_L1:DMOS_S2_L1_n 8343 631
|
||||
symloc IPP180N10N3_L1:DMOS_S2_L1_n 8974 633
|
||||
symloc IPP882N10N3_L1:DMOS_S2_L1_n 9607 633
|
||||
symloc IPT020N10N3_L1:DMOS_S2_L1_n 10240 631
|
||||
symloc IPB065N10N3_L1:DMOS_S2_L1_n 10871 629
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol IPB025N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB025N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB025N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB027N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB027N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB027N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP030N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP030N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP030N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB039N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB039N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB039N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB042N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB042N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB042N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP045N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP045N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP045N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP072N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP072N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP072N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB083N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB083N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB083N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP086N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP086N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP086N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP881N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP881N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP881N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB123N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB123N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB123N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP126N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP126N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP126N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP180N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP180N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP180N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP882N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP882N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP882N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPT020N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPT020N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPT020N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB065N10N3_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB065N10N3_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB065N10N3_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
@@ -0,0 +1,362 @@
|
||||
*version 9.1 733104234
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1796 b
|
||||
symloc IPB025N10N3:DMOS_S2_L3_n 1796 696
|
||||
symloc IPB027N10N3:DMOS_S2_L3_n 2492 696
|
||||
symloc IPP030N10N3:DMOS_S2_L3_n 3188 698
|
||||
symloc IPB039N10N3:DMOS_S2_L3_n 3886 696
|
||||
symloc IPB042N10N3:DMOS_S2_L3_n 4582 696
|
||||
symloc IPP045N10N3:DMOS_S2_L3_n 5278 698
|
||||
symloc IPP072N10N3:DMOS_S2_L3_n 5976 696
|
||||
symloc IPB083N10N3:DMOS_S2_L3_n 6672 694
|
||||
symloc IPP086N10N3:DMOS_S2_L3_n 7366 696
|
||||
symloc IPP881N10N3:DMOS_S2_L3_n 8062 696
|
||||
symloc IPB123N10N3:DMOS_S2_L3_n 8758 694
|
||||
symloc IPP126N10N3:DMOS_S2_L3_n 9452 696
|
||||
symloc IPP180N10N3:DMOS_S2_L3_n 10148 698
|
||||
symloc IPP882N10N3:DMOS_S2_L3_n 10846 698
|
||||
symloc IPT020N10N3:DMOS_S2_L3_n 11544 696
|
||||
symloc IPB065N10N3:DMOS_S2_L3_n 12240 694
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPB025N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB025N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB025N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB027N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB027N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB027N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP030N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP030N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP030N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB039N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB039N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB039N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB042N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB042N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB042N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP045N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP045N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP045N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP072N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP072N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP072N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB083N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB083N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB083N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP086N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP086N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP086N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP881N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP881N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP881N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB123N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB123N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB123N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP126N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP126N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP126N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP180N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP180N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP180N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP882N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP882N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP882N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPT020N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPT020N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPT020N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB065N10N3 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB065N10N3
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB065N10N3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
File diff suppressed because it is too large
Load Diff
Binary file not shown.
@@ -0,0 +1,188 @@
|
||||
*version 9.1 231760093
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc BSZ097N10NS5_L0:DMOS 1038 295
|
||||
symloc IPB020N10N5_L0:DMOS 1333 292
|
||||
symloc IPP023N10N5_L0:DMOS 1625 292
|
||||
symloc BSC040N10NS5_L0:DMOS 1917 295
|
||||
symloc BSC070N10NS5_L0:DMOS 2212 295
|
||||
symloc IPT015N10N5_L0:DMOS 2507 292
|
||||
symloc IPB017N10N5_L0:DMOS 2799 292
|
||||
symloc IPB027N10N5_L0:DMOS 3091 292
|
||||
symloc IPP030N10N5_L0:DMOS 3383 292
|
||||
symloc IPA083N10N5_L0:DMOS 3675 292
|
||||
symloc IPP083N10N5_L0:DMOS 3967 292
|
||||
symloc BSC035N10NS5_L0:DMOS 4259 295
|
||||
symloc BSC098N10NS5_L0:DMOS 4554 295
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSZ097N10NS5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSZ097N10NS5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ097N10NS5_L0
|
||||
*symbol IPB020N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB020N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB020N10N5_L0
|
||||
*symbol IPP023N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP023N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP023N10N5_L0
|
||||
*symbol BSC040N10NS5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC040N10NS5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC040N10NS5_L0
|
||||
*symbol BSC070N10NS5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC070N10NS5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC070N10NS5_L0
|
||||
*symbol IPT015N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPT015N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPT015N10N5_L0
|
||||
*symbol IPB017N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB017N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB017N10N5_L0
|
||||
*symbol IPB027N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPB027N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB027N10N5_L0
|
||||
*symbol IPP030N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP030N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP030N10N5_L0
|
||||
*symbol IPA083N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPA083N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA083N10N5_L0
|
||||
*symbol IPP083N10N5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=IPP083N10N5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP083N10N5_L0
|
||||
*symbol BSC035N10NS5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC035N10NS5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC035N10NS5_L0
|
||||
*symbol BSC098N10NS5_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 89 38 hcn 100 PART=BSC098N10NS5_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC098N10NS5_L0
|
||||
@@ -0,0 +1,286 @@
|
||||
*version 9.1 4240037219
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1402 b
|
||||
symloc BSZ097N10NS5_L1:DMOS_S2_L1_n 1402 634
|
||||
symloc IPB020N10N5_L1:DMOS_S2_L1_n 2036 631
|
||||
symloc IPP023N10N5_L1:DMOS_S2_L1_n 2667 633
|
||||
symloc BSC040N10NS5_L1:DMOS_S2_L1_n 3300 634
|
||||
symloc BSC070N10NS5_L1:DMOS_S2_L1_n 3934 634
|
||||
symloc IPT015N10N5_L1:DMOS_S2_L1_n 4568 631
|
||||
symloc IPB017N10N5_L1:DMOS_S2_L1_n 5199 631
|
||||
symloc IPB027N10N5_L1:DMOS_S2_L1_n 5830 631
|
||||
symloc IPP030N10N5_L1:DMOS_S2_L1_n 6461 633
|
||||
symloc IPA083N10N5_L1:DMOS_S2_L1_n 7094 633
|
||||
symloc IPP083N10N5_L1:DMOS_S2_L1_n 7727 633
|
||||
symloc BSC035N10NS5_L1:DMOS_S2_L1_n 8360 634
|
||||
symloc BSC098N10NS5_L1:DMOS_S2_L1_n 8994 634
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hcn 100 Ls=1n
|
||||
a 0 u 0:13 0 0 20 hcn 100 Ld=0.5n
|
||||
a 0 u 0:13 0 0 30 hcn 100 Lg=2n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSZ097N10NS5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSZ097N10NS5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSZ097N10NS5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPB020N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB020N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB020N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP023N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP023N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP023N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC040N10NS5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC040N10NS5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC040N10NS5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC070N10NS5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC070N10NS5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC070N10NS5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPT015N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPT015N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPT015N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPB017N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB017N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB017N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB027N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPB027N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPB027N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP030N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP030N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP030N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA083N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPA083N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPA083N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP083N10N5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=IPP083N10N5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=IPP083N10N5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC035N10NS5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC035N10NS5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC035N10NS5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC098N10NS5_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSC098N10NS5_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSC098N10NS5_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@@ -0,0 +1,311 @@
|
||||
*version 9.1 709970480
|
||||
@index
|
||||
symloc BSZ097N10NS5:DMOS_S2_L3_n 0 699
|
||||
symloc DMOS_S2_L3_n 699 1796 b
|
||||
symloc IPB020N10N5:DMOS_S2_L3_n 2495 696
|
||||
symloc IPP023N10N5:DMOS_S2_L3_n 3191 698
|
||||
symloc BSC040N10NS5:DMOS_S2_L3_n 3889 699
|
||||
symloc BSC070N10NS5:DMOS_S2_L3_n 4588 699
|
||||
symloc IPT015N10N5:DMOS_S2_L3_n 5287 696
|
||||
symloc IPB017N10N5:DMOS_S2_L3_n 5983 696
|
||||
symloc IPB027N10N5:DMOS_S2_L3_n 6679 696
|
||||
symloc IPP030N10N5:DMOS_S2_L3_n 7375 698
|
||||
symloc IPA083N10N5:DMOS_S2_L3_n 8073 698
|
||||
symloc IPP083N10N5:DMOS_S2_L3_n 8771 698
|
||||
symloc BSC035N10NS5:DMOS_S2_L3_n 9469 699
|
||||
symloc BSC098N10NS5:DMOS_S2_L3_n 10168 699
|
||||
*symbol BSZ097N10NS5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSZ097N10NS5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSZ097N10NS5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=2n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol IPB020N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB020N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB020N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP023N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP023N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP023N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC040N10NS5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC040N10NS5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC040N10NS5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC070N10NS5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC070N10NS5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC070N10NS5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPT015N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPT015N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPT015N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.5n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol IPB017N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB017N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB017N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPB027N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPB027N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPB027N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP030N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP030N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP030N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPA083N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPA083N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPA083N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol IPP083N10N5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=IPP083N10N5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=IPP083N10N5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=1.8n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=2.5n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=4n
|
||||
*symbol BSC035N10NS5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC035N10NS5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC035N10NS5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
*symbol BSC098N10NS5 ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSC098N10NS5
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth| ?Ls|Ls=@Ls| ?Ld|Ld=@Ld| ?Lg|Lg=@Lg|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSC098N10NS5
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
a 0 u 0:13 0 0 10 hlb 100 Ls=0.3n
|
||||
a 0 u 0:13 0 0 20 hlb 100 Ld=1n
|
||||
a 0 u 0:13 0 0 30 hlb 100 Lg=3n
|
||||
File diff suppressed because it is too large
Load Diff
File diff suppressed because it is too large
Load Diff
@@ -0,0 +1,618 @@
|
||||
*****************************************************************
|
||||
* INFINEON Power Transistors *
|
||||
* PSPICE Library for *
|
||||
* OptiMOS5 LinearFET 100V *
|
||||
* n-channel Transistors *
|
||||
* Version 13012020 *
|
||||
* *
|
||||
*****************************************************************
|
||||
* *
|
||||
* The Simulation Model is subject to change without notice. In *
|
||||
* addition, models can be a useful tool in evaluating device *
|
||||
* performance, they cannot reflect the accurate device *
|
||||
* performance under all conditions, nor are they intended to *
|
||||
* replace bread boarding for final verification. Infineon *
|
||||
* therefore does not assume any warranty or liability *
|
||||
* whatsoever arising from their use. Infineon does not assume *
|
||||
* any warranty or liability for the values and functions of the *
|
||||
* Simulation Model. *
|
||||
* The methods and results of the Simulation Model are to the *
|
||||
* best of our knowledge *
|
||||
* correct. However, the user is fully responsible to verify and *
|
||||
* validate these results under the operating conditions and in *
|
||||
* the environment of its application. Infineon will not bear *
|
||||
* the responsibility arising out of or in connection with any *
|
||||
* malfunction of the Simulation Models. *
|
||||
* Models provided by Infineon are not warranted by Infineon as *
|
||||
* completely and comprehensively representing all the *
|
||||
* specifications and operating characteristics of the *
|
||||
* semiconductor products to which these models relate. The *
|
||||
* models describe the characteristics of typical devices. In *
|
||||
* all cases, the current data sheet information for a given *
|
||||
* device is the conclusive design guideline and the only actual *
|
||||
* performance specification. *
|
||||
* *
|
||||
* *
|
||||
* This library contains models of the following INFINEON *
|
||||
* transistors: *
|
||||
* *
|
||||
* OptiMOS5 LinearFET 100V *
|
||||
* IPB017N10N5LF *
|
||||
* IPB020N10N5LF *
|
||||
* IPB033N10N5LF *
|
||||
* *
|
||||
*****************************************************************
|
||||
* thermal nodes of level 3 models: *
|
||||
* *
|
||||
* .SUBCKT IPB017N10N5LF drain gate source Tj Tcase *
|
||||
* Tj : potential=temperature (in <20>C) at junction (typically *
|
||||
* not connected) *
|
||||
* Tcase : node where the boundary contition - external heat *
|
||||
* sinks etc - have to be connected (ideal heat sink *
|
||||
* can be modeled by using a voltage source stating the *
|
||||
* ambient temperature in <20>C between Tcase and ground. *
|
||||
* *
|
||||
*****************************************************************
|
||||
|
||||
.SUBCKT S5_100_lf_var dd g gl s0 sp Tj PARAMS: a=1 Rsp=1 dVth=0 dR=0 dgfs=0 Inn=1
|
||||
+Unn=1 Rmax=1 gmin=1 Rs=1 Rp=1 dC=0 Rm=1u
|
||||
|
||||
.PARAM Fm=0.15 Fn=0.5 al=0.5
|
||||
.PARAM c=1.5 Vth0=3.99 auth=3.5m
|
||||
.PARAM UT=100m ab=50m lB=-23 UB=107
|
||||
|
||||
.PARAM b0l=2.6 b0=52 p0=7.919 p1=-29.8m p2=53u
|
||||
|
||||
.PARAM Rdl=200m Rd=24.4m nmu=3.12 Tref=298 T0=273 lnIsj=-27.7
|
||||
.PARAM ndi=1.07 Rdi=5m nmu2=0 td=30n ta=30n
|
||||
.PARAM Rf=0.54 nmu3=1.3 rpara=30u nisj=0
|
||||
|
||||
.PARAM kbq=85.8u
|
||||
|
||||
.PARAM f3l=20p f3=428p
|
||||
|
||||
.PARAM f3al=3p f3a=84p
|
||||
|
||||
.PARAM f2=120p U0=3 nd=0.8
|
||||
|
||||
.PARAM q81=33.7p
|
||||
.PARAM x0=17.6 x1=50 dx={x1-x0}
|
||||
|
||||
.PARAM qs1=14.5p qs2=6.1p qs3=-2.59m qs4=111p qs5=-36.5m f2r=7.71
|
||||
|
||||
.PARAM ps1=40p ps2=-1 ps3=45.6p ps4=-0.0766 ps5=1.8p ps6=2p
|
||||
.PARAM f4=7.728p f5=4.49p sl=0.19p ps0=25p
|
||||
.PARAM x2=23.6 x3=40.7 dx2={x3-x2}
|
||||
|
||||
.PARAM ps0l=1.25p ps1l=2.3p ps2l=-0.0491 ps3l=1.3p ps4l=-0.545 ps5l=0.688p
|
||||
|
||||
.PARAM Vmin=2.99 Vmax=4.99 dCmax=0.33
|
||||
.PARAM a0={a}
|
||||
.PARAM Vth={Vth0+(Vmax-Vth0)*limit(dVth,0,1)-(Vmin-Vth0)*limit(dVth,-1,0)}
|
||||
.PARAM q0={b0*((T0/Tref)**nmu3)*a}
|
||||
.PARAM q1={(Unn-Inn*Rs-Vth0)*q0}
|
||||
.PARAM q2={(Fm*SQRT(0.4)-c)*Inn*q0}
|
||||
.PARAM Rlim={(q1+2*q2*Rmax-SQRT(q1**2+4*q2))/(2*q2)}
|
||||
.PARAM dRd={Rd/a+if(dVth==0,limit(dR,0,1)*max(Rlim-Rd/a-Rs-Rp,0),0)}
|
||||
.PARAM dRdl={Rdl/a}
|
||||
.PARAM bm={c/((1/gmin-Rs)**2*Inn*a*(T0/Tref)**nmu3)}
|
||||
.PARAM bet={b0+(b0-bm)*if(dR==0,if(dVth==0,limit(dgfs,-1,0),0),0)}
|
||||
.PARAM betl=b0l
|
||||
.PARAM dC1={1+dCmax*limit(dC,0,1)}
|
||||
.PARAM dC2={1+1.5*dCmax*limit(dC,0,1)}
|
||||
|
||||
.PARAM Cdspn={f2*a*dC1}
|
||||
|
||||
.PARAM Cgs0={f3*a0*dC1}
|
||||
.PARAM Cgs1={f3a*a0*dC1}
|
||||
.PARAM Cgs0l={f3l*a*dC1}
|
||||
.PARAM Cgs1l={f3al*a*dC1}
|
||||
.PARAM dRdi={Rdi/a}
|
||||
|
||||
.PARAM Cox1={(ps1*a0+ps0*sqrt(a0))*dC1}
|
||||
.PARAM Cox2={ps3*a0*dC1}
|
||||
.PARAM Cox3={(ps5*a0+ps6)*dC1}
|
||||
.PARAM Cox4={(f5*a0+(ps5*a0+ps6))*dC1}
|
||||
.PARAM Cox1l={(ps1l*a+ps0l*sqrt(a))*dC1}
|
||||
.PARAM Cox2l={ps3l*a*dC1}
|
||||
.PARAM Cox4l={ps5l*a*dC1}
|
||||
|
||||
.PARAM Cds0={qs1*a*dC1}
|
||||
.PARAM Cds2={qs4*a*dC1}
|
||||
.PARAM Cds3={(q81+qs1)*a*dC1}
|
||||
.PARAM Cds1={qs2*(1+f2r/sqrt(a))*a*dC1}
|
||||
|
||||
.FUNC VBR(Udsp) {UB}
|
||||
|
||||
.FUNC I0(Uee,p,pp,z1) {if(Uee>pp,(Uee-c*z1)*z1,p*(pp-p)/c*exp((Uee-pp)/p))}
|
||||
.FUNC Ig(Uds,T,p,Uee) {bet*(T0/T)**nmu3*I0(Uee,p,min(2*p,p+c*Uds),min(Uds,Uee/(2*c)))}
|
||||
.FUNC J(d,g,T,da,s,x)
|
||||
+ {a*(s*(Ig(da,T,(p0+(p1+p2*T)*T)*kbq*T,g-Vth+auth*(T-Tref)+Fm*da**Fn+1*limit(-d,0,1))+exp(min(lB+(d-VBR(x)-ab*(T-Tref))/UT,25))))}
|
||||
|
||||
.FUNC Igl(Uds,T,p,Uee) {betl*(T0/T)**nmu3*I0(Uee,p,min(2*p,p+c*Uds),min(Uds,Uee/(2*c)))}
|
||||
.FUNC Jl(d,g,T,da,s,x)
|
||||
+ {a*(s*(Igl(da,T,(p0+(p1+p2*T)*T)*kbq*T,g-Vth+auth*(T-Tref)+Fm*da**Fn+1*limit(-d,0,1))+exp(min(lB+(d-VBR(x)-ab*(T-Tref))/UT,25))))}
|
||||
|
||||
.FUNC Pr(Vss0,Vssp) {Vss0*Vss0/Rm+Vssp*Vssp/Rsp}
|
||||
|
||||
.FUNC QCds(x) {Cds3*min(x,x1)+Cds0*max(x-x1,0)+(Cds3-Cds0)*((limit(x,x0,x1)-x0)**3/(dx*dx)*((limit(x,x0,x1)-x0)/(2*dx)-1))}
|
||||
.FUNC QCdg(x) {Cox4*min(x,x3)+Cox3*max(x-x3,0)+(Cox4-Cox3)*((limit(x,x2,x3)-x2)**3/(dx2*dx2)*((limit(x,x2,x3)-x2)/(2*dx2)-1))}
|
||||
|
||||
E_Edg1 d ox VALUE {if(V(d,g)>0,V(d,g)-(exp(ps2*max(V(d,g),0))-1)/ps2,0)}
|
||||
C_Cdg1 ox g {Cox1}
|
||||
E_Edg2 d ox1 VALUE {if(V(d,g)>0,V(d,g)-(exp(ps4*max(V(d,g),0))-1)/ps4,0)}
|
||||
C_Cdg2 ox1 g {Cox2}
|
||||
E_Edg3 d ox2 VALUE {V(d,g)-QCdg(V(d,g))/Cox4}
|
||||
C_Cdg3 ox2 g {Cox4}
|
||||
|
||||
E_Edg1l d oxl VALUE {if(V(d,gl)>0,V(d,gl)-(exp(ps2l*max(V(d,gl),0))-1)/ps2l,0)}
|
||||
C_Cdg1l oxl gl {Cox1l}
|
||||
E_Edg2l d ox1l VALUE {if(V(d,gl)>0,V(d,gl)-(exp(ps4l*max(V(d,gl),0))-1)/ps4l,0)}
|
||||
C_Cdg2l ox1l gl {Cox2l}
|
||||
C_Cdg3l d gl {Cox4l}
|
||||
|
||||
E_Eds d edep VALUE {V(d,s)-1/(1-nd)*U0*((limit(1+V(d,s)/U0,0,2*UB))**(1-nd)-1)}
|
||||
C_Cds edep s {Cdspn*0.99}
|
||||
|
||||
E_Eds1 d edep1 VALUE {V(d,sp)-QCds(V(d,sp))/Cds3}
|
||||
C_Cds1 edep1 sp {Cds3}
|
||||
E_Eds2 d edep2 VALUE {if(V(d,sp)>0,V(d,sp)-(exp(qs5*max(V(d,sp),0))-1)/qs5,0)}
|
||||
C_Cds2 edep2 sp {Cds2}
|
||||
E_Eds3 d edep3 VALUE {if(V(d,sp)>0,V(d,sp)-(exp(qs3*max(V(d,sp),0))-1)/qs3,0)}
|
||||
C_Cds3 edep3 sp {Cds1}
|
||||
|
||||
C_Cgs g s {Cgs0}
|
||||
C_Cgsl gl s {Cgs0l}
|
||||
C_Cgs1 g sp {Cgs1}
|
||||
C_Cgs1l gl sp {Cgs1l}
|
||||
|
||||
Rfp s sp {Rsp}
|
||||
|
||||
V_sense dd d1 0
|
||||
G_RMos d1 d VALUE={V(d1,d)/(Rf*dRd+(1-Rf)*dRd*((limit(V(Tj),-200,999)+T0)/Tref)**nmu)/(1+rpara*(I(V_sense)/a)**2)}
|
||||
V_sm d d5 0
|
||||
Rd06 d5 d5a 0.1u
|
||||
G_chan d5a s VALUE={J(V(d5a,s),V(g,s),T0+limit(V(Tj),-200,300),(SQRT(1+4*al*abs(V(d5a,s)))-1)/2/al,sgn(V(d5a,s)),V(sp,s))}
|
||||
|
||||
V_sensel dd d1l 0
|
||||
G_RMosl d1l dl VALUE={V(d1l,dl)/(Rf*dRdl+(1-Rf)*dRdl*((limit(V(Tj),-200,999)+T0)/Tref)**nmu)/(1+rpara*(I(V_sensel)/a)**2)}
|
||||
V_sml dl d5l 0
|
||||
Rd06l d5l d5al 0.1u
|
||||
G_chanl d5al s VALUE={Jl(V(d5al,s),V(gl,s),T0+limit(V(Tj),-200,300),(SQRT(1+4*al*abs(V(d5al,s)))-1)/2/al,sgn(V(d5al,s)),V(sp,s))}
|
||||
|
||||
|
||||
G_Rdio d2 d1 VALUE={V(d2,d1)/(dRdi*((limit(V(Tj),-200,999)+T0)/Tref)**nmu2)}
|
||||
V_sense2 d2 d3 0
|
||||
|
||||
Dbody s d3 dbody
|
||||
.model dbody D (BV= {UB*10},CJO ={Cdspn/1000},TT ={ta},IS ={a*exp(lnIsj)} m={0.5} RS={dRdi*1m} n={ndi})
|
||||
|
||||
R1 g s 1G
|
||||
R1l gl s 1G
|
||||
Rd01 d s 500Meg
|
||||
Rd02 d2 s 500Meg
|
||||
Rd03 d1 d 1k
|
||||
Rssp g sp 100Meg
|
||||
|
||||
Rmet s s0 {Rm}
|
||||
|
||||
G_TH 0 Tj VALUE =
|
||||
+{(I(V_sense)-I(V_sense2))*V(d1,d)+I(V_sm)*V(d,s)+I(V_sense2)*V(d1,s)+I(V_sensel)*V(d1l,s)+Pr(V(s,s0),V(s,sp))}
|
||||
|
||||
.ENDS
|
||||
|
||||
******************
|
||||
|
||||
.SUBCKT IPB017N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=414u Rg=1.9 Rgl=44 Rd=20u Rm=140u
|
||||
.PARAM Inn=100 Unn=10 Rmax=1.7m gmin=32
|
||||
.PARAM RRf=391m Rrbond=6m Rtb=3.8 g2=656m
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 10.14m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {1.21m+limit(Zthtype,0,1)*446.19u}
|
||||
Rth2 t1 t2 {13.28m+limit(Zthtype,0,1)*4.92m}
|
||||
Rth3 t2 t3 {29.27m+limit(Zthtype,0,1)*6.8m}
|
||||
Rth4 t3 t4 {65.21m+limit(Zthtype,0,1)*28.89m}
|
||||
Rth5 t4 Tcase {173.22m+limit(Zthtype,0,1)*76.75m}
|
||||
Cth1 Tj 0 377.988u
|
||||
Cth2 t1 0 858.067u
|
||||
Cth3 t2 0 3.528m
|
||||
Cth4 t3 0 4.615m
|
||||
Cth5 t4 0 136.611m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB020N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=656u Rg=1.9 Rgl=44 Rd=50u Rm=163u
|
||||
.PARAM Inn=100 Unn=10 Rmax=2m gmin=28
|
||||
.PARAM RRf=350m Rrbond=12m Rtb=5.3 g2=729m
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 8.05m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {1.21m+limit(Zthtype,0,1)*446.19u}
|
||||
Rth2 t1 t2 {13.28m+limit(Zthtype,0,1)*4.92m}
|
||||
Rth3 t2 t3 {29.27m+limit(Zthtype,0,1)*6.8m}
|
||||
Rth4 t3 t4 {65.21m+limit(Zthtype,0,1)*28.89m}
|
||||
Rth5 t4 Tcase {173.22m+limit(Zthtype,0,1)*76.75m}
|
||||
Cth1 Tj 0 377.988u
|
||||
Cth2 t1 0 858.067u
|
||||
Cth3 t2 0 3.528m
|
||||
Cth4 t3 0 4.615m
|
||||
Cth5 t4 0 136.611m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
|
||||
.ENDS
|
||||
|
||||
**************************************
|
||||
|
||||
.SUBCKT IPB033N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=674u Rg=1.8 Rgl=40 Rd=50u Rm=181u
|
||||
.PARAM Inn=100 Unn=10 Rmax=3.3m gmin=21
|
||||
.PARAM RRf=350m Rrbond=12m Rtb=5.3 g2=729m
|
||||
.PARAM act=14.73 Rsp=0.5
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 8.05m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {2.23m+limit(Zthtype,0,1)*822.89u}
|
||||
Rth2 t1 t2 {24.22m+limit(Zthtype,0,1)*8.96m}
|
||||
Rth3 t2 t3 {52.83m+limit(Zthtype,0,1)*12.63m}
|
||||
Rth4 t3 t4 {70m+limit(Zthtype,0,1)*69.88m}
|
||||
Rth5 t4 Tcase {229.42m+limit(Zthtype,0,1)*229.01m}
|
||||
Cth1 Tj 0 205.074u
|
||||
Cth2 t1 0 470.748u
|
||||
Cth3 t2 0 1.963m
|
||||
Cth4 t3 0 2.504m
|
||||
Cth5 t4 0 88.491m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
|
||||
.SUBCKT IPB017N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=2n Ld=2.5n Lg=4n
|
||||
|
||||
.PARAM Rs=414u Rg=1.9 Rgl=44 Rd=20u Rm=140u
|
||||
.PARAM Inn=100 Unn=10 Rmax=1.7m gmin=32
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB020N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=656u Rg=1.9 Rgl=44 Rd=50u Rm=163u
|
||||
.PARAM Inn=100 Unn=10 Rmax=2m gmin=28
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB033N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=2n Ld=2.5n Lg=4n
|
||||
|
||||
.PARAM Rs=674u Rg=1.8 Rgl=40 Rd=50u Rm=181u
|
||||
.PARAM Inn=100 Unn=10 Rmax=3.3m gmin=23
|
||||
.PARAM act=14.73 Rsp=0.5
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
|
||||
|
||||
|
||||
@@ -0,0 +1,620 @@
|
||||
*****************************************************************
|
||||
* INFINEON Power Transistors *
|
||||
* LTSPICE Library for *
|
||||
* OptiMOS5 LinearFET 100V *
|
||||
* n-channel Transistors *
|
||||
* Version 15052020 *
|
||||
* *
|
||||
*****************************************************************
|
||||
* *
|
||||
* The Simulation Model is subject to change without notice. In *
|
||||
* addition, models can be a useful tool in evaluating device *
|
||||
* performance, they cannot reflect the accurate device *
|
||||
* performance under all conditions, nor are they intended to *
|
||||
* replace bread boarding for final verification. Infineon *
|
||||
* therefore does not assume any warranty or liability *
|
||||
* whatsoever arising from their use. Infineon does not assume *
|
||||
* any warranty or liability for the values and functions of the *
|
||||
* Simulation Model. *
|
||||
* The methods and results of the Simulation Model are to the *
|
||||
* best of our knowledge *
|
||||
* correct. However, the user is fully responsible to verify and *
|
||||
* validate these results under the operating conditions and in *
|
||||
* the environment of its application. Infineon will not bear *
|
||||
* the responsibility arising out of or in connection with any *
|
||||
* malfunction of the Simulation Models. *
|
||||
* Models provided by Infineon are not warranted by Infineon as *
|
||||
* completely and comprehensively representing all the *
|
||||
* specifications and operating characteristics of the *
|
||||
* semiconductor products to which these models relate. The *
|
||||
* models describe the characteristics of typical devices. In *
|
||||
* all cases, the current data sheet information for a given *
|
||||
* device is the conclusive design guideline and the only actual *
|
||||
* performance specification. *
|
||||
* *
|
||||
* *
|
||||
* This library contains models of the following INFINEON *
|
||||
* transistors: *
|
||||
* *
|
||||
* OptiMOS5 LinearFET 100V *
|
||||
* IPB017N10N5LF *
|
||||
* IPB020N10N5LF *
|
||||
* IPB033N10N5LF *
|
||||
* *
|
||||
*****************************************************************
|
||||
* thermal nodes of level 3 models: *
|
||||
* *
|
||||
* .SUBCKT IPB017N10N5LF drain gate source Tj Tcase *
|
||||
* Tj : potential=temperature (in <20>C) at junction (typically *
|
||||
* not connected) *
|
||||
* Tcase : node where the boundary contition - external heat *
|
||||
* sinks etc - have to be connected (ideal heat sink *
|
||||
* can be modeled by using a voltage source stating the *
|
||||
* ambient temperature in <20>C between Tcase and ground. *
|
||||
* *
|
||||
*****************************************************************
|
||||
|
||||
.options Thev_Induc=1
|
||||
|
||||
.SUBCKT S5_100_lf_var dd g gl s0 sp Tj PARAMS: a=1 Rsp=1 dVth=0 dR=0 dgfs=0 Inn=1
|
||||
+Unn=1 Rmax=1 gmin=1 Rs=1 Rp=1 dC=0 Rm=1u
|
||||
|
||||
.PARAM Fm=0.15 Fn=0.5 al=0.5
|
||||
.PARAM c=1.5 Vth0=3.99 auth=3.5m
|
||||
.PARAM UT=100m ab=50m lB=-23 UB=107
|
||||
|
||||
.PARAM b0l=2.6 b0=52 p0=7.919 p1=-29.8m p2=53u
|
||||
|
||||
.PARAM Rdl=200m Rd=24.4m nmu=3.12 Tref=298 T0=273 lnIsj=-27.7
|
||||
.PARAM ndi=1.07 Rdi=5m nmu2=0 td=30n ta=30n
|
||||
.PARAM Rf=0.54 nmu3=1.3 rpara=30u nisj=0
|
||||
|
||||
.PARAM kbq=85.8u
|
||||
|
||||
.PARAM f3l=20p f3=428p
|
||||
|
||||
.PARAM f3al=3p f3a=84p
|
||||
|
||||
.PARAM f2=120p U0=3 nd=0.8
|
||||
|
||||
.PARAM q81=33.7p
|
||||
.PARAM x0=17.6 x1=50 dx={x1-x0}
|
||||
|
||||
.PARAM qs1=14.5p qs2=6.1p qs3=-2.59m qs4=111p qs5=-36.5m f2r=7.71
|
||||
|
||||
.PARAM ps1=40p ps2=-1 ps3=45.6p ps4=-0.0766 ps5=1.8p ps6=2p
|
||||
.PARAM f4=7.728p f5=4.49p sl=0.19p ps0=25p
|
||||
.PARAM x2=23.6 x3=40.7 dx2={x3-x2}
|
||||
|
||||
.PARAM ps0l=1.25p ps1l=2.3p ps2l=-0.0491 ps3l=1.3p ps4l=-0.545 ps5l=0.688p
|
||||
|
||||
.PARAM Vmin=2.99 Vmax=4.99 dCmax=0.33
|
||||
.PARAM a0={a}
|
||||
.PARAM Vth={Vth0+(Vmax-Vth0)*limit(dVth,0,1)-(Vmin-Vth0)*limit(dVth,-1,0)}
|
||||
.PARAM q0={b0*((T0/Tref)**nmu3)*a}
|
||||
.PARAM q1={(Unn-Inn*Rs-Vth0)*q0}
|
||||
.PARAM q2={(Fm*SQRT(0.4)-c)*Inn*q0}
|
||||
.PARAM Rlim={(q1+2*q2*Rmax-SQRT(q1**2+4*q2))/(2*q2)}
|
||||
.PARAM dRd={Rd/a+if(dVth==0,limit(dR,0,1)*max(Rlim-Rd/a-Rs-Rp,0),0)}
|
||||
.PARAM dRdl={Rdl/a}
|
||||
.PARAM bm={c/((1/gmin-Rs)**2*Inn*a*(T0/Tref)**nmu3)}
|
||||
.PARAM bet={b0+(b0-bm)*if(dR==0,if(dVth==0,limit(dgfs,-1,0),0),0)}
|
||||
.PARAM betl=b0l
|
||||
.PARAM dC1={1+dCmax*limit(dC,0,1)}
|
||||
.PARAM dC2={1+1.5*dCmax*limit(dC,0,1)}
|
||||
|
||||
.PARAM Cdspn={f2*a*dC1}
|
||||
|
||||
.PARAM Cgs0={f3*a0*dC1}
|
||||
.PARAM Cgs1={f3a*a0*dC1}
|
||||
.PARAM Cgs0l={f3l*a*dC1}
|
||||
.PARAM Cgs1l={f3al*a*dC1}
|
||||
.PARAM dRdi={Rdi/a}
|
||||
|
||||
.PARAM Cox1={(ps1*a0+ps0*sqrt(a0))*dC1}
|
||||
.PARAM Cox2={ps3*a0*dC1}
|
||||
.PARAM Cox3={(ps5*a0+ps6)*dC1}
|
||||
.PARAM Cox4={(f5*a0+(ps5*a0+ps6))*dC1}
|
||||
.PARAM Cox1l={(ps1l*a+ps0l*sqrt(a))*dC1}
|
||||
.PARAM Cox2l={ps3l*a*dC1}
|
||||
.PARAM Cox4l={ps5l*a*dC1}
|
||||
|
||||
.PARAM Cds0={qs1*a*dC1}
|
||||
.PARAM Cds2={qs4*a*dC1}
|
||||
.PARAM Cds3={(q81+qs1)*a*dC1}
|
||||
.PARAM Cds1={qs2*(1+f2r/sqrt(a))*a*dC1}
|
||||
|
||||
.FUNC VBR(Udsp) {UB}
|
||||
|
||||
.FUNC I0(Uee,p,pp,z1) {if(Uee>pp,(Uee-c*z1)*z1,p*(pp-p)/c*exp((Uee-pp)/p))}
|
||||
.FUNC Ig(Uds,T,p,Uee) {bet*(T0/T)**nmu3*I0(Uee,p,min(2*p,p+c*Uds),min(Uds,Uee/(2*c)))}
|
||||
.FUNC J(d,g,T,da,s,x)
|
||||
+ {a*(s*(Ig(da,T,(p0+(p1+p2*T)*T)*kbq*T,g-Vth+auth*(T-Tref)+Fm*da**Fn+1*limit(-d,0,1))+exp(min(lB+(d-VBR(x)-ab*(T-Tref))/UT,25))))}
|
||||
|
||||
.FUNC Igl(Uds,T,p,Uee) {betl*(T0/T)**nmu3*I0(Uee,p,min(2*p,p+c*Uds),min(Uds,Uee/(2*c)))}
|
||||
.FUNC Jl(d,g,T,da,s,x)
|
||||
+ {a*(s*(Igl(da,T,(p0+(p1+p2*T)*T)*kbq*T,g-Vth+auth*(T-Tref)+Fm*da**Fn+1*limit(-d,0,1))+exp(min(lB+(d-VBR(x)-ab*(T-Tref))/UT,25))))}
|
||||
|
||||
.FUNC Pr(Vss0,Vssp) {Vss0*Vss0/Rm+Vssp*Vssp/Rsp}
|
||||
|
||||
.FUNC QCds(x) {Cds3*min(x,x1)+Cds0*max(x-x1,0)+(Cds3-Cds0)*((limit(x,x0,x1)-x0)**3/(dx*dx)*((limit(x,x0,x1)-x0)/(2*dx)-1))}
|
||||
.FUNC QCdg(x) {Cox4*min(x,x3)+Cox3*max(x-x3,0)+(Cox4-Cox3)*((limit(x,x2,x3)-x2)**3/(dx2*dx2)*((limit(x,x2,x3)-x2)/(2*dx2)-1))}
|
||||
|
||||
E_Edg1 d ox VALUE {if(V(d,g)>0,V(d,g)-(exp(ps2*max(V(d,g),0))-1)/ps2,0)}
|
||||
C_Cdg1 ox g {Cox1}
|
||||
E_Edg2 d ox1 VALUE {if(V(d,g)>0,V(d,g)-(exp(ps4*max(V(d,g),0))-1)/ps4,0)}
|
||||
C_Cdg2 ox1 g {Cox2}
|
||||
E_Edg3 d ox2 VALUE {V(d,g)-QCdg(V(d,g))/Cox4}
|
||||
C_Cdg3 ox2 g {Cox4}
|
||||
|
||||
E_Edg1l d oxl VALUE {if(V(d,gl)>0,V(d,gl)-(exp(ps2l*max(V(d,gl),0))-1)/ps2l,0)}
|
||||
C_Cdg1l oxl gl {Cox1l}
|
||||
E_Edg2l d ox1l VALUE {if(V(d,gl)>0,V(d,gl)-(exp(ps4l*max(V(d,gl),0))-1)/ps4l,0)}
|
||||
C_Cdg2l ox1l gl {Cox2l}
|
||||
C_Cdg3l d gl {Cox4l}
|
||||
|
||||
E_Eds d edep VALUE {V(d,s)-1/(1-nd)*U0*((limit(1+V(d,s)/U0,0,2*UB))**(1-nd)-1)}
|
||||
C_Cds edep s {Cdspn*0.99}
|
||||
|
||||
E_Eds1 d edep1 VALUE {V(d,sp)-QCds(V(d,sp))/Cds3}
|
||||
C_Cds1 edep1 sp {Cds3}
|
||||
E_Eds2 d edep2 VALUE {if(V(d,sp)>0,V(d,sp)-(exp(qs5*max(V(d,sp),0))-1)/qs5,0)}
|
||||
C_Cds2 edep2 sp {Cds2}
|
||||
E_Eds3 d edep3 VALUE {if(V(d,sp)>0,V(d,sp)-(exp(qs3*max(V(d,sp),0))-1)/qs3,0)}
|
||||
C_Cds3 edep3 sp {Cds1}
|
||||
|
||||
C_Cgs g s {Cgs0}
|
||||
C_Cgsl gl s {Cgs0l}
|
||||
C_Cgs1 g sp {Cgs1}
|
||||
C_Cgs1l gl sp {Cgs1l}
|
||||
|
||||
Rfp s sp {Rsp}
|
||||
|
||||
V_sense dd d1 0
|
||||
G_RMos d1 d VALUE={V(d1,d)/(Rf*dRd+(1-Rf)*dRd*((limit(V(Tj),-200,999)+T0)/Tref)**nmu)/(1+rpara*(I(V_sense)/a)**2)}
|
||||
V_sm d d5 0
|
||||
Rd06 d5 d5a 0.1u
|
||||
G_chan d5a s VALUE={J(V(d5a,s),V(g,s),T0+limit(V(Tj),-200,300),(SQRT(1+4*al*abs(V(d5a,s)))-1)/2/al,sgn(V(d5a,s)),V(sp,s))}
|
||||
|
||||
V_sensel dd d1l 0
|
||||
G_RMosl d1l dl VALUE={V(d1l,dl)/(Rf*dRdl+(1-Rf)*dRdl*((limit(V(Tj),-200,999)+T0)/Tref)**nmu)/(1+rpara*(I(V_sensel)/a)**2)}
|
||||
V_sml dl d5l 0
|
||||
Rd06l d5l d5al 0.1u
|
||||
G_chanl d5al s VALUE={Jl(V(d5al,s),V(gl,s),T0+limit(V(Tj),-200,300),(SQRT(1+4*al*abs(V(d5al,s)))-1)/2/al,sgn(V(d5al,s)),V(sp,s))}
|
||||
|
||||
|
||||
G_Rdio d2 d1 VALUE={V(d2,d1)/(dRdi*((limit(V(Tj),-200,999)+T0)/Tref)**nmu2)}
|
||||
V_sense2 d2 d3 0
|
||||
|
||||
Dbody s d3 dbody
|
||||
.model dbody D (BV= {UB*10},CJO ={Cdspn/1000},TT ={ta},IS ={a*exp(lnIsj)} m={0.5} RS={dRdi*1m} n={ndi})
|
||||
|
||||
R1 g s 1G
|
||||
R1l gl s 1G
|
||||
Rd01 d s 500Meg
|
||||
Rd02 d2 s 500Meg
|
||||
Rd03 d1 d 1k
|
||||
Rssp g sp 100Meg
|
||||
|
||||
Rmet s s0 {Rm}
|
||||
|
||||
G_TH 0 Tj VALUE =
|
||||
+{(I(V_sense)-I(V_sense2))*V(d1,d)+I(V_sm)*V(d,s)+I(V_sense2)*V(d1,s)+I(V_sensel)*V(d1l,s)+Pr(V(s,s0),V(s,sp))}
|
||||
|
||||
.ENDS
|
||||
|
||||
******************
|
||||
|
||||
.SUBCKT IPB017N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=414u Rg=1.9 Rgl=44 Rd=20u Rm=140u
|
||||
.PARAM Inn=100 Unn=10 Rmax=1.7m gmin=32
|
||||
.PARAM RRf=391m Rrbond=6m Rtb=3.8 g2=656m
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 10.14m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {1.21m+limit(Zthtype,0,1)*446.19u}
|
||||
Rth2 t1 t2 {13.28m+limit(Zthtype,0,1)*4.92m}
|
||||
Rth3 t2 t3 {29.27m+limit(Zthtype,0,1)*6.8m}
|
||||
Rth4 t3 t4 {65.21m+limit(Zthtype,0,1)*28.89m}
|
||||
Rth5 t4 Tcase {173.22m+limit(Zthtype,0,1)*76.75m}
|
||||
Cth1 Tj 0 377.988u
|
||||
Cth2 t1 0 858.067u
|
||||
Cth3 t2 0 3.528m
|
||||
Cth4 t3 0 4.615m
|
||||
Cth5 t4 0 136.611m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB020N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=656u Rg=1.9 Rgl=44 Rd=50u Rm=163u
|
||||
.PARAM Inn=100 Unn=10 Rmax=2m gmin=28
|
||||
.PARAM RRf=350m Rrbond=12m Rtb=5.3 g2=729m
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 8.05m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {1.21m+limit(Zthtype,0,1)*446.19u}
|
||||
Rth2 t1 t2 {13.28m+limit(Zthtype,0,1)*4.92m}
|
||||
Rth3 t2 t3 {29.27m+limit(Zthtype,0,1)*6.8m}
|
||||
Rth4 t3 t4 {65.21m+limit(Zthtype,0,1)*28.89m}
|
||||
Rth5 t4 Tcase {173.22m+limit(Zthtype,0,1)*76.75m}
|
||||
Cth1 Tj 0 377.988u
|
||||
Cth2 t1 0 858.067u
|
||||
Cth3 t2 0 3.528m
|
||||
Cth4 t3 0 4.615m
|
||||
Cth5 t4 0 136.611m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
|
||||
.ENDS
|
||||
|
||||
**************************************
|
||||
|
||||
.SUBCKT IPB033N10N5LF drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Zthtype=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=674u Rg=1.8 Rgl=40 Rd=50u Rm=181u
|
||||
.PARAM Inn=100 Unn=10 Rmax=3.3m gmin=21
|
||||
.PARAM RRf=350m Rrbond=12m Rtb=5.3 g2=729m
|
||||
.PARAM act=14.73 Rsp=0.5
|
||||
|
||||
.FUNC Pb(I,dT,Rb) {Rb/(2*Rtb)*(I-limit(dT/(max(I,1n)*Rb)+RRf*I*g2,0,I))**2}
|
||||
|
||||
X1 d1 g gl s sp Tj S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
Rsb source s1 10
|
||||
Rga gate g1l 10
|
||||
Rdb drain d2 10
|
||||
|
||||
G_TH 0 Tb VALUE = {Pb(abs(I(Ls)),V(Tj,Tcase),Rrbond*(1+(limit((V(Tb)+V(Tj))/2,-200,999)-25)*4m))}
|
||||
Cthb Tb 0 8.05m
|
||||
Rthb Tb Tj {Rtb}
|
||||
Rth1 Tj t1 {2.23m+limit(Zthtype,0,1)*822.89u}
|
||||
Rth2 t1 t2 {24.22m+limit(Zthtype,0,1)*8.96m}
|
||||
Rth3 t2 t3 {52.83m+limit(Zthtype,0,1)*12.63m}
|
||||
Rth4 t3 t4 {70m+limit(Zthtype,0,1)*69.88m}
|
||||
Rth5 t4 Tcase {229.42m+limit(Zthtype,0,1)*229.01m}
|
||||
Cth1 Tj 0 205.074u
|
||||
Cth2 t1 0 470.748u
|
||||
Cth3 t2 0 1.963m
|
||||
Cth4 t3 0 2.504m
|
||||
Cth5 t4 0 88.491m
|
||||
Cth6 Tcase 0 190m
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
|
||||
.SUBCKT IPB017N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=2n Ld=2.5n Lg=4n
|
||||
|
||||
.PARAM Rs=414u Rg=1.9 Rgl=44 Rd=20u Rm=140u
|
||||
.PARAM Inn=100 Unn=10 Rmax=1.7m gmin=32
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB020N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=1.8n Ld=1n Lg=4n
|
||||
|
||||
.PARAM Rs=656u Rg=1.9 Rgl=44 Rd=50u Rm=163u
|
||||
.PARAM Inn=100 Unn=10 Rmax=2m gmin=28
|
||||
.PARAM act=27.15 Rsp=0.47
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
.SUBCKT IPB033N10N5LF_L1 drain gate source PARAMS: dVth=0 dRdson=0 dgfs=0 dC=0 Ls=2n Ld=2.5n Lg=4n
|
||||
|
||||
.PARAM Rs=674u Rg=1.8 Rgl=40 Rd=50u Rm=181u
|
||||
.PARAM Inn=100 Unn=10 Rmax=3.3m gmin=23
|
||||
.PARAM act=14.73 Rsp=0.5
|
||||
|
||||
X1 d1 g gl s sp Tj1 S5_100_lf_var PARAMS: a={act} Rsp={Rsp} dVth={dVth} dR={dRdson} dgfs={dgfs} Inn={Inn} Unn={Unn}
|
||||
+Rmax={Rmax} gmin={gmin} Rs={Rs} Rp={Rd} dC={dC} Rm={Rm}
|
||||
|
||||
.MODEL D01 D(BV=330 CJO=1p VJ=0.9 M=0.5 RS=1k)
|
||||
.MODEL D02 D(BV=4.5 CJO=1p VJ=0.91 M=0.47)
|
||||
.MODEL D03 D(BV=5 CJO=1p VJ=0.91 M=0.47 RS=1k)
|
||||
.MODEL D04 D(BV=30 CJO=1p VJ=0.9 M=0.5)
|
||||
.MODEL PMOS PMOS ( LEVEL=1 VTO=-2.1 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
.MODEL NMOS NMOS ( LEVEL=1 VTO=0.9 KP=40U LAMBDA=.001 GAMMA=.6 PHI=0.8 TOX=40n CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10
|
||||
+ MJ=0.5 PB=0.95)
|
||||
|
||||
M1 a1 a2 a3 a3 PMOS L=1.6u W=4.536m
|
||||
M2 a4 a5 a6 a6 NMOS L=1.6u W=453.6u
|
||||
|
||||
G1 d1 a8 VALUE={min(V(d1,a8),1.55)/1.2Meg}
|
||||
G2 a2 a3 VALUE={if(V(a2,a3)<0,V(a2,a3)/10Meg,V(a2,a3)/1.7Meg)}
|
||||
|
||||
D1 a8 d1 D01
|
||||
D2 a8 a2 D02
|
||||
D3 s a8 D03
|
||||
D4 z a7 D04
|
||||
|
||||
R2 a8 a5 4.8Meg
|
||||
R3 a5 s 2.4Meg
|
||||
R4 a4 a7 39.7 TC=10m
|
||||
R5 s a6 7.94 TC=10n
|
||||
R6 z a1 7.9m TC=10m
|
||||
R7 g1l a3 6.35 TC=10m
|
||||
R8 a2 a3 1G
|
||||
R9 d1 a8 100G
|
||||
|
||||
C1 a8 d1 3p
|
||||
|
||||
Rg z g {Rg}
|
||||
Rgl g1l gl {Rgl}
|
||||
Lgl gate g1l {Lg*if(dgfs==99,0,1)}
|
||||
|
||||
Gs s1 s VALUE={V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)}
|
||||
Rsa s1 s 1Meg
|
||||
Ls source s1 {Ls*if(dgfs==99,0,1)}
|
||||
Rda d1 d2 {Rd}
|
||||
Ld drain d2 {Ld*if(dgfs==99,0,1)}
|
||||
|
||||
E2 Tj w VALUE={TEMP}
|
||||
Vp Tj1 Tj 0
|
||||
R1 Tj Tj1 1u
|
||||
G_power 0 Tj VALUE =
|
||||
+{V(s1,s)*V(s1,s)/(Rs*(1+(limit(V(Tj),-200,999)-25)*4m)-Rm)+V(z,g)*V(z,g)/Rg+V(g1l,gl)*V(g1l,gl)/Rgl+V(d1,d2)*V(d1,d2)/Rd+I(Vp)}
|
||||
R10 w 0 1u
|
||||
|
||||
.ENDS
|
||||
|
||||
**********
|
||||
|
||||
|
||||
|
||||
|
||||
@@ -0,0 +1,640 @@
|
||||
*version 9.1 546938296
|
||||
@index
|
||||
symloc DMOS_S2_L3_n 0 1664 b
|
||||
symloc BSS119N:DMOS_S2_L3_n 1664 550
|
||||
symloc DMOS_S2_L1_n 2214 1268 b
|
||||
symloc BSS119N_L1:DMOS_S2_L1_n 3482 485
|
||||
symloc BSS119N_L0 3967 1054
|
||||
symloc BSS123N:DMOS_S2_L3_n 5021 550
|
||||
symloc BSP296N:DMOS_S2_L3_n 5571 550
|
||||
symloc BSP372N:DMOS_S2_L3_n 6121 550
|
||||
symloc BSP373N:DMOS_S2_L3_n 6671 550
|
||||
symloc BSS123N_L1:DMOS_S2_L1_n 7221 485
|
||||
symloc BSP296N_L1:DMOS_S2_L1_n 7706 485
|
||||
symloc BSP372N_L1:DMOS_S2_L1_n 8191 485
|
||||
symloc BSP373N_L1:DMOS_S2_L1_n 8676 485
|
||||
symloc BSS123N_L0 9161 1054
|
||||
symloc BSP296N_L0 10215 1054
|
||||
symloc BSP373N_L0 11269 1054
|
||||
symloc BSP372N_L0 12323 1054
|
||||
*symbol DMOS_S2_L3_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tcase n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 5 d_info:,,,,,,,,,,,,,5,
|
||||
Tcase
|
||||
*symbol BSS119N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSS119N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSS119N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSS119N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSS119N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS119N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSS119N_L0
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSS119N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS119N_L0
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSS123N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSS123N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSS123N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
*symbol BSP296N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSP296N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSP296N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
*symbol BSP372N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSP372N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSP372N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
*symbol BSP373N ako DMOS_S2_L3_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 38 -3 hln 100 PART=BSP373N
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tcase @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSP373N
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 50 hlb 100 dZth=
|
||||
*symbol BSS123N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSS123N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS123N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSP296N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP296N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP296N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSP372N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP372N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP372N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSP373N_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP373N_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP373N_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSS123N_L0
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSS123N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS123N_L0
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSP296N_L0
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP296N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP296N_L0
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSP373N_L0
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP373N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP373N_L0
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSP372N_L0
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=BSP372N_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP372N_L0
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
Binary file not shown.
@@ -0,0 +1,230 @@
|
||||
*version 9.1 1966487578
|
||||
@index
|
||||
symloc DMOS 0 1038 b
|
||||
symloc DMOS_depletion 1038 1063 b
|
||||
symloc BSP296_L0:DMOS 2101 277
|
||||
symloc BSS123_L0:DMOS 2378 277
|
||||
symloc BSP123_L0:DMOS 2655 277
|
||||
symloc BSS119_L0:DMOS 2932 277
|
||||
symloc BSS169_L0:DMOS_depletion 3209 302
|
||||
symloc SISC0_5N10D_L0:DMOS_depletion 3511 317
|
||||
symloc BSP372_L0:DMOS 3828 277
|
||||
symloc BSL296SN_L0:DMOS 4105 283
|
||||
symloc BSL372SN_L0:DMOS 4388 283
|
||||
symloc BSL373SN_L0:DMOS 4671 283
|
||||
*symbol DMOS b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol DMOS_depletion b
|
||||
d Infineon n-channel depletion mode DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 27
|
||||
20 10
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSP296_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSP296_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP296_L0
|
||||
*symbol BSS123_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSS123_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS123_L0
|
||||
*symbol BSP123_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSP123_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP123_L0
|
||||
*symbol BSS119_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSS119_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS119_L0
|
||||
*symbol BSS169_L0 ako DMOS_depletion
|
||||
d Infineon n-channel DMOS depletion mode transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSS169_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS169_L0
|
||||
*symbol SISC0_5N10D_L0 ako DMOS_depletion
|
||||
d Infineon n-channel DMOS depletion mode transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 91 36 hcn 100 PART=SISC0_5N10D_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=SISC0_5N10D_L0
|
||||
*symbol BSP372_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSP372_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP372_L0
|
||||
*symbol BSL296SN_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSL296SN_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL296SN_L0
|
||||
*symbol BSL372SN_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSL372SN_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL372SN_L0
|
||||
*symbol BSL373SN_L0 ako DMOS
|
||||
d Infineon n-channel DMOS transistor
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 71 38 hcn 100 PART=BSL373SN_L0
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL373SN_L0
|
||||
@@ -0,0 +1,265 @@
|
||||
*version 9.1 3529091409
|
||||
@index
|
||||
symloc DMOS_S2_L1_n 0 1267 b
|
||||
symloc BSP296_L1:DMOS_S2_L1_n 1267 481
|
||||
symloc BSS123_L1:DMOS_S2_L1_n 1748 481
|
||||
symloc BSP123_L1:DMOS_S2_L1_n 2229 481
|
||||
symloc BSS119_L1:DMOS_S2_L1_n 2710 481
|
||||
symloc BSS169_L1:DMOS_S2_L1d_n 3191 483
|
||||
symloc SISC0_5N10D_L1:DMOS_S2_L1d_n 3674 497
|
||||
symloc DMOS_S2_L1d_n 4171 1281 b
|
||||
symloc BSL296SN_L1:DMOS_S2_L1_n 5452 487
|
||||
symloc BSL372SN_L1:DMOS_S2_L1_n 5939 487
|
||||
symloc BSL373SN_L1:DMOS_S2_L1_n 6426 487
|
||||
*symbol DMOS_S2_L1_n b
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
*symbol BSP296_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSP296_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP296_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSS123_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSS123_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS123_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSP123_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSP123_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSP123_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSS119_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSS119_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS119_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSS169_L1 ako DMOS_S2_L1d_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSS169_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSS169_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol SISC0_5N10D_L1 ako DMOS_S2_L1d_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=SISC0_5N10D_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=SISC0_5N10D_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol DMOS_S2_L1d_n b
|
||||
d Infineon n-channel depletion DMOS
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 87 34 hcn 100 PART=DMOS_S2_L1d_n
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=DMOS_S2_L1d
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
@graphics 46 40 0 20 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 38 10
|
||||
38 30
|
||||
28 30
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 20 27
|
||||
20 17
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 17
|
||||
20 7
|
||||
;
|
||||
*symbol BSL296SN_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSL296SN_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL296SN_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSL372SN_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSL372SN_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL372SN_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
*symbol BSL373SN_L1 ako DMOS_S2_L1_n
|
||||
d Infineon n-channel DMOS
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 1 sp 0 0 0 0 hcn 100 TEMPLATE=X^@refdes %drain %gate %source @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC|
|
||||
a 0 s 9 0 61 12 hcn 100 REFDES=X?
|
||||
a 0 sp 11 0 70 37 hcn 100 PART=BSL373SN_L1
|
||||
a 0 sp 0:13 0 4 40 hcn 100 MODEL=BSL373SN_L1
|
||||
a 0 u 0:13 0 0 10 hcn 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hcn 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hcn 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hcn 100 dC=
|
||||
@@ -0,0 +1,298 @@
|
||||
*version 9.1 704753418
|
||||
@index
|
||||
symloc DMOS_K_L3_SSP_n 0 1698 b
|
||||
symloc BSP296:DMOS_K_L3_SSP_n 1698 557
|
||||
symloc BSS123:DMOS_K_L3_SSP_n 2255 557
|
||||
symloc BSP123:DMOS_K_L3_SSP_n 2812 557
|
||||
symloc BSS119:DMOS_K_L3_SSP_n 3369 557
|
||||
symloc BSS169:DMOS_K_L3d_SSP_n 3926 558
|
||||
symloc SISC0_5N10D:DMOS_K_L3d_SSP_n 4484 573
|
||||
symloc DMOS_K_L3d_SSP_n 5057 1699 b
|
||||
symloc BSL296SN:DMOS_K_L3_SSP_n 6756 563
|
||||
symloc BSL372SN:DMOS_K_L3_SSP_n 7319 563
|
||||
symloc BSL373SN:DMOS_K_L3_SSP_n 7882 563
|
||||
*symbol DMOS_K_L3_SSP_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tsolder_joint n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 20 13
|
||||
20 7
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 23
|
||||
20 17
|
||||
;
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 13 d_info:,0/128/0,,,,,,,,,,,,5,
|
||||
Tsolder_joint
|
||||
*symbol BSP296 ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSP296
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSP296
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSS123 ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSS123
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSS123
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSP123 ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSP123
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSP123
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSS119 ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 8.0
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSS119
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSS119
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSS169 ako DMOS_K_L3d_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSS169
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSS169
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol SISC0_5N10D ako DMOS_K_L3d_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=SISC0_5N10D
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=SISC0_5N10D
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol DMOS_K_L3d_SSP_n b
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.2
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=DMOS_S2_L3_n
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=DMOS_L3
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
@pins
|
||||
p 0 25 40 hcn 100 source n 30 40 v
|
||||
a 0 s 0:1 0 31 38 hln 100 PIN=3
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 10 20 hcn 100 gate n 0 20 h
|
||||
a 0 s 0:1 0 1 18 hln 100 PIN=2
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 25 10 hcn 100 drain n 30 0 d
|
||||
a 0 s 0:1 0 31 -2 hln 100 PIN=1
|
||||
a 0 s 0 0 0 0 hln 100 ERC=x
|
||||
p 0 70 8 hrn 100 Tj n 60 10 u
|
||||
a 0 s 0:1 0 51 16 hln 100 PIN=4
|
||||
a 0 s 0:13 0 60 10 hln 100 ERC=x
|
||||
a 0 s 0:13 0 0 10 hln 100 FLOAT=r
|
||||
p 0 88 26 hrn 100 Tsolder_joint n 60 30 u
|
||||
a 0 s 0:1 0 51 36 hln 100 PIN=5
|
||||
a 0 s 0:13 0 60 30 hln 100 ERC=x
|
||||
@graphics 60 40 0 0 10
|
||||
c 0 25 20 20 d_info:,0/0/0,,,,,,,,,,,,,
|
||||
v 0 30 30
|
||||
38 30
|
||||
38 10
|
||||
;
|
||||
v 0 38 18 d_info:,,,,4/1/6/6,ON,0/0/255,,,,,,,,
|
||||
35 22
|
||||
41 22
|
||||
38 18
|
||||
;
|
||||
v 0 20 20
|
||||
25 24
|
||||
;
|
||||
v 0 25 16
|
||||
20 20
|
||||
;
|
||||
r 0 35 17 41 18 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 30 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
c 0 30 10 1 d_info:,,,,,ON,0/0/255,,,,,,,,
|
||||
v 0 30 20
|
||||
20 20
|
||||
;
|
||||
v 0 20 17
|
||||
20 7
|
||||
;
|
||||
v 0 15 10
|
||||
15 30
|
||||
;
|
||||
v 0 20 30
|
||||
30 30
|
||||
;
|
||||
v 0 10 20
|
||||
15 20
|
||||
;
|
||||
v 0 30 20
|
||||
30 30
|
||||
;
|
||||
v 0 38 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 10
|
||||
30 10
|
||||
;
|
||||
v 0 20 33
|
||||
20 27
|
||||
;
|
||||
v 0 20 27
|
||||
20 17
|
||||
;
|
||||
z 26 54 6 hln 100 2 d_info:,,,,,,,,,,,,,5,
|
||||
Tj
|
||||
z 26 46 27 hln 100 13 d_info:,0/128/0,,,,,,,,,,,,5,
|
||||
Tsolder_joint
|
||||
*symbol BSL296SN ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSL296SN
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSL296SN
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSL372SN ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSL372SN
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSL372SN
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
*symbol BSL373SN ako DMOS_K_L3_SSP_n
|
||||
d Infineon DMOS with thermal network
|
||||
@type p 9.1
|
||||
@attributes
|
||||
a 0 sp 11 0 39 62 hln 100 PART=BSL373SN
|
||||
a 0 sp 0 0 0 0 hln 100 TEMPLATE=X^@refdes %drain %gate %source %Tj %Tsolder_joint @MODEL PARAMS: ?dVth|dVth=@dVth| ?dRdson|dRdson=@dRdson| ?dgfs|dgfs=@dgfs| ?dC|dC=@dC| ?dZth|Zthtype=@dZth|
|
||||
a 0 s 9 0 -3 0 hcn 100 REFDES=X?
|
||||
a 0 sp 0:13 0 5 50 hcn 100 MODEL=BSL373SN
|
||||
a 0 u 0:13 0 0 10 hlb 100 dVth=
|
||||
a 0 u 0:13 0 0 20 hlb 100 dRdson=
|
||||
a 0 u 0:13 0 0 30 hlb 100 dgfs=
|
||||
a 0 u 0:13 0 0 40 hlb 100 dC=
|
||||
a 0 u 0:13 0 0 10 hlb 100 dZth=
|
||||
File diff suppressed because it is too large
Load Diff
Reference in New Issue
Block a user