185 lines
5.5 KiB
Plaintext
Executable File
185 lines
5.5 KiB
Plaintext
Executable File
*******************************************************************
|
|
******STMicroelectronics MOSFET, IGBT and Bipolar Library *********
|
|
*******************************************************************
|
|
* *
|
|
* Models provided by STMicroelectronics are not guaranteed to *
|
|
* fully represent all the specifications and operating *
|
|
* characteristics of the product behavior that they reproduce. *
|
|
* The model describes the characteristics of a typical device. *
|
|
* In all cases, the current product data sheet contains all *
|
|
* information to be used like final design guidelines and the *
|
|
* only actual performance specification. *
|
|
* Altough models can be a useful tool in evaluating device *
|
|
* performance, they cannot model exact device performance under *
|
|
* all conditions. *
|
|
* STMicroelectronics therefore does not assume any *
|
|
* responsibility arising from their use. *
|
|
* STMicroelectronics reserves the right to change models *
|
|
* without prior notice. *
|
|
* *
|
|
* Note: The model doesn't take into account the drain, gate, *
|
|
* source inductances.If these contributions have to be *
|
|
* considered it is possible include the inductors externally. *
|
|
* For this package the values can be estimated as follow *
|
|
* *
|
|
* Ldrain= 1nH ,Lsource=2nH and Lgate=2.5nH *
|
|
* *
|
|
* Rev 2.0 - 10 April 2013 *
|
|
*******************************************************************
|
|
|
|
.SUBCKT STL3N10F7_V2 1 2 3
|
|
*******************************************************************
|
|
E1 Tj val_T VALUE={TEMP}
|
|
R1 val_T 0 1E-03
|
|
***********************************************************
|
|
Rtk Tj 0 1E10
|
|
Rtk1 Tj 0 1E10
|
|
************************************
|
|
VLd 1 d1k 0
|
|
VLs ss 3 0
|
|
VLG 2 g2 0
|
|
rg1 g2 g {rg}
|
|
Rdsx s dx 100k
|
|
Cdx dx d 50p
|
|
*******************************************************************
|
|
.PARAM Area=1 BVDSS=1 raval=121m
|
|
***************************************************
|
|
.PARAM rg=1.85 Vth0=4 drs=10u
|
|
.PARAM lambda=0.001
|
|
.PARAM kpsat0=3.3 kplin0=20
|
|
|
|
|
|
.PARAM rd=53.6m
|
|
.PARAM rpa=1E-05
|
|
|
|
***********************************
|
|
.PARAM unt =-1.8 vthx=4.5m ksat=-1 klin=-1
|
|
.PARAM a=1 b=1 Rx=1.1
|
|
.param rr=1
|
|
|
|
|
|
***********************************************************
|
|
.FUNC r_s(T) {drs*((T+273)/300)**(rr)}
|
|
.FUNC vth1(x) {vth0-vthx*(x-27)}
|
|
.FUNC kpsat(x) {kpsat0*((x+273)/300)**(ksat)}
|
|
.FUNC kplin(x) {kplin0*((x+273)/300)**(klin)}
|
|
.FUNC un(T) {b*((T+273)/300)**(unt)}
|
|
|
|
***********************************************************
|
|
***********************************************************
|
|
Gmos d s value {Area*(IF(V(d,s)>0,(IF(v(g,s)<vth1(V(TJ)),0,
|
|
+(IF((V(d,s)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(d,s))*kplin(v(TJ))/2*v(d,s)*
|
|
+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(d,s)),
|
|
+(1+LAMBDA*v(d,s))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2)))),-(IF(v(g,s)<vth1(V(TJ)),0,
|
|
+(IF((V(s,d)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(s,d))*kplin(v(TJ))/2*v(s,d)*
|
|
+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(s,d)),
|
|
+(1+LAMBDA*v(s,d))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2))))))}
|
|
|
|
G_RMos d1k dd VALUE={Area*((un(V(TJ))*(V(d1k,d)))/(rd+rpa*((I(V_sense)**a))**Rx))}
|
|
|
|
G_rs s ss VALUE={v(s,ss)/(r_s(V(TJ)))}
|
|
|
|
R_Grs s ss 1E03
|
|
R_Rmos d1k dd 1E03
|
|
V_sense dd d 0
|
|
***********************************************************
|
|
rdd dd 0 1E10
|
|
rdd1 d 0 1E10
|
|
rdd3 s 0 1E10
|
|
R_DS d s 1E10
|
|
***********************************************************
|
|
CGS g 3 {518p*Area}
|
|
R_CGS g 3 500E06
|
|
***********************************************************
|
|
Cref 40 0 1E-12
|
|
E2 40 50 value {V(g,d1k)}
|
|
V2 50 0 0
|
|
Gcdg d1k g value {Area*V(alfa)*i(V2)*1E12}
|
|
Rcap 0 alfa 1E03
|
|
Ecap alfa 0 TABLE = {V(d1k,ss)}
|
|
+(0.1,231p)
|
|
+(0.2,212p)
|
|
+(0.5,203p)
|
|
+(1,182p)
|
|
+(2,135p)
|
|
+(3,79p)
|
|
+(5,71p)
|
|
+(7,49p)
|
|
+(10,32p)
|
|
+(15,25p)
|
|
+(25,18p)
|
|
+(35,14p)
|
|
+(50,10p)
|
|
+(60,8p)
|
|
+(70,7p)
|
|
+(80,6p)
|
|
+(90,6p)
|
|
+(100,6p)
|
|
|
|
***********************************************************
|
|
Cref2 402 0 1E-12
|
|
E22 402 502 value {V(ss,d1k)}
|
|
V22 502 0 0
|
|
Gcdg2 d1k ss value {0.5*Area*V(alfa2)*i(V22)*1E12}
|
|
Rcap2 0 alfa2 100E03
|
|
Ecap2 alfa2 0 TABLE = {V(d1k,ss)}
|
|
+(0.1,356p)
|
|
+(0.2,347p)
|
|
+(0.5,321p)
|
|
+(1,292p)
|
|
+(2,261p)
|
|
+(3,243p)
|
|
+(5,222p)
|
|
+(7,208p)
|
|
+(10,193p)
|
|
+(15,175p)
|
|
+(25,152p)
|
|
+(35,135p)
|
|
+(50,112p)
|
|
+(60,94p)
|
|
+(70,66p)
|
|
+(80,52p)
|
|
+(90,47p)
|
|
+(100,44p)
|
|
|
|
|
|
***********************************************************
|
|
***********************************************************
|
|
R_bvdss d1k d1bvdss1 {raval}
|
|
V_bvdss d1bvdss1 d1bvdss2 0
|
|
G_bvd d1bvdss2 ss VALUE={I_BVDSS(V(d1bvdss2,ss),v(Tj))}
|
|
R_GBDSS d1bvdss2 0 1E10
|
|
.FUNC I_BVDSS(z,k1) {(exp(min(-175+z/(bvd(k1)),7))-10E-12)}
|
|
***********************************************************
|
|
.FUNC bvd(k) {0.62*BVDSS+0.00031*k}
|
|
***********************************************************
|
|
.FUNC Rdiodo(rdid) {rdid0*((rdid+273)/300)**(rdid_temp)}
|
|
.PARAM rdid0={1.5/Area} rdid_temp=1.5
|
|
G_R_didd d1k d1z VALUE={200*(V(d1k,d1z)/Rdiodo(V(TJ)))}
|
|
|
|
R_G_R_didd d1k d1z {1/Area}
|
|
|
|
V_diodo d1zd d1z 0
|
|
|
|
G_diode 3 d1zd VALUE={I_diode(V(3,d1zd),v(Tj))}
|
|
R_x 3 d1zd 1E9
|
|
|
|
.FUNC I_diode(z3,k3) {(exp(min(-15+z3/(did(k3)),7))-100n)}
|
|
|
|
|
|
.FUNC did(k4) {0.066-91E-06*k4}
|
|
|
|
***********************************************************
|
|
R_R003 aa 0 500E06
|
|
R_edep d1k d_dedep 75
|
|
E_Eds d_dedep edep VALUE {-V(aa,0)*1k}
|
|
C_Cds edep ss {16E-12*Area}
|
|
E_E001 ba 0 VALUE {-I(V_diodo)*(0.0016*v(Tj)+1)}
|
|
R_R001 aa ba 35
|
|
C aa 0 19p
|
|
***********************************************************
|
|
|
|
.ENDS STL3N10F7_V2
|
|
|
|
* END OF MODELLING
|