* Copyright © 2004-2015 Linear Technology Corporation.
* All rights reserved.
*
.subckt LT1457 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=1.5f ink=1
B1 0 N005 I=10u*dnlim(uplim(V(1),V(4)-.6,.1), V(5)+3.4, .1)+1n*V(1)
B2 N005 0 I=10u*dnlim(uplim(V(2),V(4)-.59,.1), V(5)+3.39, .1)+1n*V(2)
C6 4 1 2p Rpar=2T noiseless
C7 1 5 2p noiseless Rpar=2T
C8 2 5 2p Rpar=2T noiseless
C9 4 2 2p Rpar=2T noiseless
A2 0 N005 0 0 0 0 XP 0 OTA g=7.12m asym isource=2.65m isink=-4.6m cout=660p en=12.8n enk=31 Vhigh=1e308 Vlow=-1e308
C10 N005 0 1f Rpar=100K noiseless
M1 4 N004 3 3 N temp=27
M2 5 N004 3 3 P temp=27
C1 N004 0 12f Rpar=1Meg noiseless
C3 4 3 0.5p
C4 3 5 0.5p
D5 N004 3 YU
D6 3 N004 YD
G1 0 N004 XP 0 1µ
C2 3 N004 20f Rser=10k noiseless
R3 4 XP 100Meg noiseless
R4 XP 5 100Meg noiseless
G2 XP 0 XP 4 500m dir=1 vto=-1.8
G3 0 XP 5 XP 500m dir=1 vto=-1.8
D1 4 5 DP
.model X D(Ron=1K Roff=100G Vfwd=-2.06 epsilon=1.0 noiseless)
.model YU D(Ron=500 Roff=1T Vfwd=1.30 epsilon=0.1 noiseless)
.model YD D(Ron=500 Roff=1T Vfwd = 1.2 epsilon=0.1 noiseless)
.model DP D(Ron=100 Roff=1g Vfwd=2 epsilon=.2 ilimit=.2m noiseless)
.model N VDMOS(Vto=-400m Kp=20m)
.model P VDMOS(Vto=400m Kp=20m pchan)
.ends LT1457
*
.subckt LTC1477 1 2 3 4 5 6 7
C4 1 5 500f
M1 2D N004 1 1 N1 M=2
M2 7 N004 1 1 N2 M=.7
M3 6 N004 1 1 N2 M=.7
R2 2 2D 25m
C2 6 5 500f
C3 2 5 500f
C5 7 5 500f
C6 3 5 500f
C8 N004 5 1p Rpar=800k
D2 N003 N004 DILIM
S4 N004 5 N008 5 SOFF
S5 1 N004 N010 N011 SCL
A1 2D 2 0 0 0 0 N010 0 OTA g=390u linear Rout=100k Cout=10f vlow=1e-308 vhigh=1e308
C7 N011 0 10f Rpar=100k
G1 5 N002 N005 0 1
R1 N005 0 1G
G2 5 N003 0 N005 .22
G3 0 N005 5 N003 .22
C1 N002 5 10p Rpar=10Meg
G4 0 N005 N002 5 1
S1 N002 3 N006 N003 SCPREG
C9 3 5 1p
G6 5 N006 3 N009 table(-1 -50n 0 0 900m 0 1.5 50n 2 70n 2.2 75n 3 90n 4.5 120n)
C10 N006 5 1f Rpar=100Meg
M4 N007 N004 1 1 NCGD
R6 N004 N003 1Meg
R7 2D 1 100Meg
R10 1 5 100Meg
D3 N011 0 DLIM
R3 7 2D 500Meg
R4 6 2D 500Meg
D4 5 1 DESD
G8 3 5 3 N009 table(0 0 1 0 2 5u 3.3 19.2u 5 43.1u 6 55u)
G7 0 N011 1 3 80µ vto=-.9 dir=1
R8 2 N007 20
A5 4 5 5 5 5 N009 5 5 SCHMITT vt=1.35 vh=50m trise=1u tfall=400u Vlow=0 Vhigh=10
D1 5 4 DESD
C12 4 5 500f
A6 3 5 5 5 5 5 N012 5 SCHMITT vt=1.8 vh=0 trise=1u vlow=0 vhigh=10
A7 N009 5 5 N012 5 5 N008 5 AND trise=1u Ref=5 Vlow=0 Vhigh=10
.model SCPREG SW(level=2 Ron=100 Roff=100Meg vt=0 vh=-50m)
.model SCL SW(level=2 Ron=1 Roff=1G vt=813m vh=-100m)
.model DLIM D(Ron=100 Roff=1Meg vfwd=8 epsilon=1)
.model DESD D(Ron=1 Roff=1G vfwd=1 epsilon=500m)
.model N1 VDMOS(vto=3 kp=1 mtriode=1.5 Cgs=20n  Rs=15m Cjo=100p Is=0)
.model N2 VDMOS(vto=2.62 kp=1 mtriode=1.5 Cgs=20n Rs=32m Rd=50m Cjo=100p Is=0)
.model NCGD VDMOS(vto=3 kp=1u Cgdmax=40n Cgdmin=10n  Is=0)
.model DILIM D(Ron=10k Roff=10k vfwd=1 epsilon=100m ilimit=400u)
.model SOFF SW(level=2 Ron=80 Roff=100Meg vt=2 vh=1)
.ends LTC1477
*
.subckt LT1672 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=8f ink=54.7
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)+37,.1), V(5)-.1, .1)+1n*V(1)-663p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)+37.01,.1), V(5)-.11, .1)+1n*V(2)
C9 4 2 2.3p Rser=2k noiseless
C10 N004 0 200p Rpar=100K noiseless
D4 4 N011 DBIA3
M1 3 N012 N014 N014 NI temp=27
C2 4 3 1p Rpar=1g noiseless
D1 4 N005 DVLIMU
D5 N012 5 DLIMN1
M2 3 N006 N005 N005 PI temp=27
D8 4 N006 DLIMP1
C3 4 N006 100p Rser=600k noiseless
A3 N009 N010 5 5 5 5 N006 5 OTA g=800n ref=-.021 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=1g noiseless
C12 N012 5 50f Rser=20k noiseless
C4 4 N005 1p Rpar=1g noiseless
D2 4 2 DBIA2
D3 4 1 DBIA2
D10 1 N011 DBIA1
D11 2 N011 DBIA1
D6 N012 5 DLIMN2
A4 0 N004 0 0 0 0 N007 0 OTA g=1u linear en=232n/freq**.05 Vhigh=1e308 Vlow=-1e308
C16 N010 3 6.6p
A5 N008 0 N009 N009 N009 N009 N010 N009 OTA g=500n iout=33.5n Vhigh=1e308 Vlow=-1e308
D12 1 4 DBIAOT
D13 2 4 DBIAOT
G1 5 N012 N010 N009 50n
C5 N011 5 20p Rpar=50Meg noiseless
D9 N010 N009 DLIM
C6 2 5 2.3p Rser=2k noiseless
C7 4 1 2.3p Rser=2k noiseless
C8 1 5 2.3p Rser=2k noiseless
C13 4 5 1000p
C15 N006 N012 100f Rser=500k noiseless
D7 4 5 DP
C17 0 N007 8p Rpar=1Meg noiseless
C19 0 N008 8p Rpar=1Meg noiseless
G4 0 N008 N007 0 1µ
D14 N014 5 DVLIMD
C1 N014 5 1p Rpar=1g noiseless
D15 4 N006 DLIMP2
S1 N010 N009 N009 4 SHUT
S2 4 N006 5 4 SHUT
S3 N012 5 5 4 SHUT
C14 N006 3 5p Rser=1Meg noiseless
G2 0 N009 5 0 .5m
G3 0 N009 4 0 .5m
C18 N009 0 150p Rpar=1K
.model DP D(Roff=1T Ron=1k Vfwd=0.5 ilimit=.81u noiseless)
.model DBIA1 D(Ron=100k Roff=100T  Vfwd=.1 ilimit=1.6p epsilon=.1 noiseless)
.model DBIA2 D(Ron=100k Roff=10T Vfwd=0 ilimit=.2p epsilon=1m noiseless)
.model DBIA3 D(Ron=10Meg Roff=100G Vfwd=.7 epsilon=.1 noiseless)
.model DBIAOT D(Ron=50k Roff=100T Vfwd=0 ilimit=170p epsilon=50m noiseless)
.model DVLIMU D(Ron=10 Roff=1Meg Vfwd=34m epsilon=2m noiseless)
.model DVLIMD D(Ron=10 Roff=1Meg Vfwd=49m epsilon=2m noiseless)
.model SHUT SW(Ron=1 Roff=100G vt=-1 vh=-.1 noiseless)
.model NI VDMOS(Vto=300m kp=1.5m lambda=.01)
.model DLIMN1 D(Ron=100 Roff=2g Vfwd=1.8 Vrev=-320m epsilon=.1  noiseless)
.model DLIMN2 D(Ron=400Meg Roff=2G Vfwd=-10m epsilon=100m ilimit=900p noiseless)
.model PI VDMOS(Vto=-300m Kp=2m lambda=.01 pchan is=0)
.model DLIMP1 D(Ron=100k Roff=300Meg Vfwd=1.33 Vrev=-320m epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(Ron=100Meg Roff=2g Vfwd=-10m epsilon=100m ilimit=3.5n noiseless)
.model DLIM D(Ron=100k Roff=500Meg Vfwd=100m Vrev=200m epsilon=10m revepsilon=10m noiseless)
.ends LT1672
*
.subckt LT1784 1 2 3 4 5 6
C10 N006 0 10f Rpar=100K noiseless
A4 0 N006 0 0 0 0 N007 0 OTA g=1u linear en=20n enk=8 cout=600f Vlow=-1e308 Vhigh=1e308
C13 4 5 100p
D7 4 5 DP
G7 0 N008 N007 0 1m
L1 N008 0 402.5µ Cpar=1.32p Rser=1.14k Rpar=8.14k noiseless
D14 N007 0 DLIMIN
M1 3 VN 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
D1 4 N009 DILIMU
D5 VN 5 DLIMN1
M2 3 VP N009 N009 PI temp=27
D6 4 VP DLIMP
A2 0 X6 4 4 4 4 VP 4 OTA g=800n ref=-345m linear vlow=-1e308 vhigh=1e308
C3 3 5 1p Rpar=1g noiseless
C4 4 N009 1p Rpar=1G noiseless
D8 VN 5 DLIMN2
C11 X5 N010 1.75p
A3 N008 0 0 0 0 0 X5 0 OTA g=28u iout=4.5u Vhigh=1e308 Vlow=-1e308
D9 X5 0 DLIM
S1 X5 0 0 N004 SHUT
S2 4 VP 0 N004 SHUT
S3 VN 5 0 N004 SHUT
R4 4 N013 8Meg noiseless
R5 N013 5 8Meg noiseless
G1 0 N010 3 N013 10m
C12 N010 0 10f Rpar=100 noiseless
C14 VP 3 .1f
C15 3 VN .1f
A5 0 X6 5 5 5 5 VN 5 OTA g=30n ref=345m linear vlow=-1e308 vhigh=1e308
G2 0 X6 4 N009 1m vto=90m dir=1
G4 0 X6 X5 0 1µ
R6 X6 0 1Meg noiseless
R7 X7 X6 28K noiseless
B3 X7 0 I=15p*ddt(V(X7))*(.5+.5*tanh((-400m-V(VP,4))/5m))
S5 4 5 N004 0 SP2
S6 4 5 N004 0 SP1
A1 2 1 0 0 0 0 0 0 OTA g=0 in=300f ink=20.8
C1 4 2 2.5p Rser=1k Rpar=300Meg noiseless
D2 4 N011 DBIA3
D3 N005 2 DBIA2
D4 N005 1 DBIA2
D10 1 N011 DBIA1
D11 2 N011 DBIA1
D12 1 N005 DBIAOT1
D13 2 N005 DBIAOT1
C5 N011 5 20p
C6 2 5 2.5p Rser=1k noiseless
C7 4 1 2.5p Rser=1k Rpar=300Meg noiseless
C8 1 5 2.5p Rser=1k noiseless
G3 0 N004 4 5 50n
S4 N004 0 6 5 SHUTI
C9 N004 0 4.5p
C16 5 6 100f Rpar=10Meg noiseless
D15 5 1 DPROT
D16 5 2 DPROT
D17 1 N005 DBIAOT2
D18 2 N005 DBIAOT2
S7 N011 5 N004 0 SWBIAS
S8 4 N005 N004 0 SWBIAS2
C17 4 N005 500f
S9 2 1 N004 0 SIN
D19 6 5 DSHUT
B1 N006 0 I=10u*dnlim(uplim(V(2),V(5)+18.11,.1), V(5)-.11, .1)+1n*V(2)
B2 0 N006 I=10u*dnlim(uplim(V(1),V(5)+18.1,.1), V(5)-.1, .1)+1n*V(1)-1.732n
.model DLIMIN D(Ron=1k Roff=1Meg vfwd=200m epsilon=20m vrev=200m revepsilon=20m noiseless)
.model DPROT D(Ron=1k Roff=2G Vfwd=1 epsilon=10m noiseless)
.model SIN SW(ron=200k Roff=1G vt=.5 vh=-100m noiseless)
.model DSHUT D(Ron=1.11Meg Roff=10Meg vfwd=20m epsilon=20m ilimit=9.9u)
.model SP1 SW(Roff=100Meg Ron=1k vt=.5 vh=-200m ilimit=362.1u noiseless)
.model SP2 SW(Roff=100Meg Ron=190k vt=.5 vh=-200m ilimit=65u noiseless)
.model DP D(Roff=100Meg Ron=1k vfwd=600m epsilon=500m ilimit=5.3u noiseless)
.model DILIMU D(Ron=2 Roff=100k Vfwd=59m epsilon=2m noiseless)
.model SHUT SW(Ron=1 Roff=100G vt=-1 vh=-.9 noiseless)
.model SHUTI SW(Ron=100 Roff=20Meg vt=1.2 vh=-10m noiseless)
.model NI VDMOS(Vto=300m kp=15m lambda=.01 noiseless)
.model PI VDMOS(Vto=-300m Kp=15m lambda=.01 pchan is=0 noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=3.6 Vrev=-.3  epsilon=10m revepsilon=10m noiseless)
.model DLIM D(Ron=10k Roff=70Meg Vfwd=2 Vrev=100m epsilon=10m revepsilon=10m noiseless)
.model DLIMN1 D(Ron=200k Roff=700Meg Vfwd=2.2 Vrev=-330m epsilon=.1  noiseless)
.model DLIMN2 D(Ron=15Meg Roff=1G Vfwd=-10m epsilon=50m ilimit=25.7n noiseless)
.model DBIA1 D(Ron=1k Roff=100G  Vfwd=.1 ilimit=715n epsilon=.1 noiseless)
.model DBIA2 D(Ron=1k Roff=100G Vfwd=0 ilimit=300n epsilon=10m noiseless)
.model DBIA3 D(Ron=1k Roff=10G Vfwd=1.1 epsilon=.1 noiseless)
.model SWBIAS SW(Ron=500k Roff=1G vt=.5 vh=-200m noiseless)
.model SWBIAS2 SW(Ron=5k Roff=1G vt=.5 vh=-200m noiseless)
.model DBIAOT1 D(Ron=2k Vfwd=0 ilimit=150u epsilon=10m noiseless)
.model DBIAOT2 D(Ron=208k Vfwd=0 ilimit=200u epsilon=50m noiseless)
.ends LT1784
*
.subckt LT1803 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.49p ink=88.2
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-240p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 N004 0 3f Rpar=100K noiseless
D4 4 N011 DBIA3
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
D5 N012 5 DLIMN1
M2 3 N008 4 4 PI temp=27
D8 4 N008 DLIMP1
C3 4 N008 .08f Rser=20Meg noiseless
A3 N009 N007 5 5 5 5 N008 5 OTA g=80n ref=-.015 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=1g noiseless
C12 N012 5 .02f Rser=1Meg noiseless
D10 1 N011 DBIA1
D11 2 N011 DBIA1
D6 N012 5 DLIMN2
A4 0 N004 0 0 0 0 N005 0 OTA g=1u linear en=20.5n enk=512 Vhigh=.21 Vlow=-.21
C16 N007 3 6p
D12 1 4 DESD
D13 2 4 DESD
G1 5 N012 N007 N009 20n
C5 N011 5 20p Rpar=100k noiseless
C7 4 1 1p Rpar=10g noiseless
C13 4 5 1000p
C15 N008 N012 .1f Rser=10Meg noiseless
D7 4 5 DP
C17 0 N005 37f Rpar=1Meg noiseless
G4 0 N006 N005 0 1m
D14 4 N008 DLIMP2
L1 N006 0 13.1µ Cpar=108f Rser=1.24k Rpar=5.17k noiseless
D15 1 2 DIN
D16 N011 1 DBIA2
D3 N011 2 DBIA2
C4 N008 3 .01f
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 1p Rpar=10g noiseless
C6 1 5 1p Rpar=10g noiseless
C8 2 5 1p Rpar=10g noiseless
C14 N009 N007 10f Rpar=80k noiseless
G3 N009 N007 0 N006 3m
G2 0 N009 5 0 50m
G5 0 N009 4 0 50m
C18 N009 0 100p Rpar=10
.model DP D(Roff=1T Ron=1k Vfwd=0.5 ilimit=1.7m noiseless)
.model DBIA1 D(Ron=1k Roff=10G  Vfwd=0  ilimit=2.5u epsilon=.2 noiseless)
.model DBIA2 D(Ron=1k Roff=10T Vfwd=-.1 epsilon=.2 ilimit=125n noiseless)
.model DBIA3 D(Ron=100 Roff=100G Vfwd=1.1 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model DVLIMU D(Ron=10 Roff=1Meg Vfwd=45m epsilon=2m noiseless)
.model NI VDMOS(Vto=300m kp=150m  lambda=.01)
.model DLIMN1 D(Ron=100 Roff=10g Vfwd=1.07 Vrev=-340m epsilon=.1  noiseless)
.model DLIMN2 D(Ron=100Meg Roff=10g Vfwd=320m epsilon=700m noiseless)
.model PI VDMOS(Vto=-300m kp=150m lambda=.01 pchan is=0)
.model DLIMP1 D(Ron=100 Roff=1G Vfwd=.94 Vrev=-340m epsilon=600m revepsilon=10m noiseless)
.model DLIMP2 D(Ron=40Meg Roff=2g Vfwd=320m epsilon=500m noiseless)
.model DIN D(Ron=2k Roff=100g Vfwd=1.5 Vrev=1.5 epsilon=100m revepsilon=100m noiseless)
.ends LT1803
*
.subckt LT1815 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=1.28p ink=288
C2 2 1 .1p Rpar=750k noiseless
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.7,.1), V(5)+.7, .1)+1n*V(1)
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.69,.1), V(5)+.69, .1)+1n*V(2)
C9 4 2 1p Rpar=10Meg noiseless
C10 N004 0 1f Rpar=100K noiseless
M1 4 N005 3 3 N temp=27
M2 5 N005 3 3 P temp=27
C3 4 3 1p
D5 N005 3 YU
D6 3 N005 YD
R2 4 N007 80Meg noiseless
R3 N007 5 80Meg noiseless
C4 3 5 1p
C1 2 5 1p Rpar=10G noiseless
C6 4 1 1p Rpar=10Meg noiseless
C7 1 5 1p Rpar=10G noiseless
A6 0 N004 0 0 0 0 N006 0 OTA g=10m linear Cout=1p en=5.96n enk=126 Vhigh=1e308 rout=1k Vlow=-1e308
D2 4 1 DBIAS
D4 4 2 DBIAS
G1 0 N005 N007 0 100µ
C8 0 N005 2f Rpar=10k noiseless
D3 4 5 DC
D7 N006 N009 DNL
C12 N009 0 6.5p Rpar=10k
G2 0 N007 N006 0 7.8µ
C14 N007 0 49.7f
R1 4 5 25k noiseless
G3 N007 0 N007 4 100m dir=1 vto=-.89
G4 0 N007 5 N007 100m dir=1 vto=-.89
.model YU D(Ron=10 Roff=1T Vfwd=.68 epsilon=.1 noiseless)
.model YD D(Ron=100 Roff=1T Vfwd=.61 epsilon=.1 noiseless)
.model N VDMOS(Vto=-100m Kp=390m)
.model P VDMOS(Vto=100m Kp=300m pchan)
.model DBIAS D(Ron=100k Roff=1T Vfwd=.6 ilimit=2u noiseless)
.model DC D(Ron=100 Roff=1G Vfwd=1 epsilon=.1 ilimit=4.393m noiseless)
.model DNL D(Ron=100 Roff=10k Vfwd=4.2 Vrev=4.2 epsilon=.5 revepsilon=.5 noiseless)
.ends LT1815
*
.subckt LT1818 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=1.19p ink=189
C2 2 1 1f Rpar=750k noiseless
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.7,.1), V(5)+.7, .1)+1n*V(1)
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.69,.1), V(5)+.69, .1)+1n*V(2)
C9 4 2 .75p Rpar=10Meg noiseless
C10 N004 0 1f Rpar=100K noiseless
M1 4 N006 3 3 N temp=27
M2 5 N006 3 3 P temp=27
C3 4 3 .1p
D5 N006 3 YU
D6 3 N006 YD
R2 4 N007 100Meg noiseless
R3 N007 5 100Meg noiseless
C4 3 5 .1p
C1 2 5 .75p Rpar=10G noiseless
C6 4 1 .75p Rpar=10Meg noiseless
C7 1 5 .75p Rpar=10G noiseless
D2 4 1 DBIAS
D4 4 2 DBIAS
D3 4 5 DC
G2 0 N007 N008 0 5µ
C14 N007 0 20f
R1 4 5 10k noiseless
A2 0 N004 0 0 0 0 N008 0 OTA g=10m linear Cout=428f en=5.96n enk=126 Vhigh=100 rout=1k Vlow=-100
D7 N006 N005 DLS
G1 0 N005 N007 0 10µ
C12 N005 0 10f Rpar=100K noiseless
D1 N008 0 DNL
C11 N006 0 1.7f Rser=705k Rpar=1Meg noiseless
G5 0 N006 N007 0 1µ
G3 N007 0 N007 4 100m dir=1 vto=-.89
G4 0 N007 5 N007 100m dir=1 vto=-.89
.model YU D(Ron=10 Roff=1T Vfwd=.68 epsilon=.1 noiseless)
.model YD D(Ron=100 Roff=1T Vfwd=.68 epsilon=.1 noiseless)
.model N VDMOS(Vto=-100m Kp=390m)
.model P VDMOS(Vto=100m Kp=300m pchan)
.model DBIAS D(Ron=100k Roff=1T Vfwd=.6 ilimit=1.5u noiseless)
.model DC D(Ron=100 Roff=1G Vfwd=1 epsilon=.1 ilimit=6.294m noiseless)
.model DNL D(Ron=650 Roff=10k Vfwd=2.8 Vrev=2.8 epsilon=.5 revepsilon=.5 noiseless)
.model DLS D(Ron=10k Roff=1T Vfwd=200m Vrev=200m epsilon=20m revepsilon=20m noiseless)
.ends LT1818
*
.subckt LT6010 1 2 3 4 5 6
A1 2 1 0 0 0 0 0 0 OTA g=0 in=100f ink=24.6
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-1.1,.1), V(5)+.9, .1)+1n*V(1)-89p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-1.09,.1), V(5)+.89, .1)+1n*V(2)
C10 N004 0 50f Rpar=100K noiseless
M1 3 N011 5 5 NI temp=27
C2 4 3 1p Rpar=860k noiseless
D5 N011 5 DLIMN
M2 3 N007 4 4 PI temp=27
D8 4 N007 DLIMP
C3 4 N007 500f Rser=1.5Meg noiseless
A3 N008 N009 5 5 5 5 N007 5 OTA g=200n ref=-37m linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=860k noiseless
C12 N011 5 10f Rser=250k noiseless
A4 0 N004 0 0 0 0 N006 0 OTA g=1u linear en=14n enk=4.2 Vhigh=1e308 Vlow=-1e308
C16 N009 3 12p
A5 N006 0 N008 N008 N008 N008 N009 N008 OTA g=30u iout=1.335u Vhigh=1e308 Vlow=-1e308
G1 5 N011 N009 N008 200n
D9 N009 N008 DLIM
C14 N007 3 4f
C7 4 1 2p Rser=2k Rpar=240G noiseless
C13 4 5 1000p
C15 N007 N011 50f Rser=1Meg noiseless
S1 N009 N008 0 N005 SHUT2
C1 N006 0 260f Rpar=1Meg noiseless
C17 5 6 500f Rpar=1Meg noiseless
G2 0 N008 5 0 .5m
G4 0 N008 4 0 .5m
C18 N008 0 200p Rpar=1K noiseless
D1 2 1 DIN
D3 6 5 DSHUT
S4 N007 4 0 N005 SHUT1
S2 5 N011 0 N005 SHUT1
A6 6 5 0 0 0 N005 0 0 SCHMITT Vt=.189 Vh=10m trise=1u tfall=30u
C4 4 2 2p Rser=2k Rpar=240G noiseless
C5 1 5 2p Rser=2k Rpar=240G noiseless
C6 2 5 2p Rser=2k Rpar=240G noiseless
S3 5 2 N005 0 SBIAS
S5 5 1 N005 0 SBIAS
S6 4 5 N005 0 SPOW2
S7 4 5 N005 0 SPOW1
.model DSHUT D(Ron=85k Roff=1Meg Vfwd=.6 epsilon=100m noiseless)
.model DIN D(Ron=1k Roff=20Meg Vfwd=1.5 epsilon=.1 Vrev=1.5 revepsilon=.1 noiseless)
.model SBIAS SW(level=2 Ron=50Meg Roff=100G vt=.5 vh=-.1 ilimit 18p noiseless )
.model SPOW1 SW(level=2 Ron=1k Roff=1G vt=.5 vh=-.1 ilimit=37u noiseless)
.model SPOW2 SW(Ron=255k Roff=1G vt=.5 vh=.1 noiseless)
.model SHUT1 SW(Ron=100k Roff=100G vt=-.8 vh=-100m Vser=305m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model SHUTI SW(level=2 Ron=100k Roff=20Meg vt=.2 vh=-50m noiseless)
.model NI VDMOS(Vto=300m kp=30m lambda=.01)
.model PI VDMOS(Vto=-300m Kp=30m lambda=.01 pchan is=0)
.model DLIM D(Ron=100k Roff=70Meg Vfwd=200m Vrev=200m epsilon=10m revepsilon=10m noiseless)
.model DSLIM D(Ron=100 Roff=1G Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIMN D(Ron=100k Roff=100Meg Vfwd=1.3 Vrev=-300m epsilon=.1  noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.25 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.ends LT6010
*
.subckt LT6011 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=100f ink=24.6
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-1.1,.1), V(5)+.9, .1)+1n*V(1)-89p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-1.09,.1), V(5)+.89, .1)+1n*V(2)
C10 N004 0 50f Rpar=100K noiseless
M1 3 N010 5 5 NI temp=27
C2 4 3 1p Rpar=860k noiseless
D5 N010 5 DLIMN
M2 3 N006 4 4 PI temp=27
D8 4 N006 DLIMP
C3 4 N006 500f Rser=1.5Meg noiseless
A3 N007 N008 5 5 5 5 N006 5 OTA g=200n ref=-37m linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=860k noiseless
C12 N010 5 10f Rser=250k noiseless
A4 0 N004 0 0 0 0 N005 0 OTA g=1u linear en=14n enk=4.2 Vhigh=1e308 Vlow=-1e308
C16 N008 3 12p
A5 N005 0 N007 N007 N007 N007 N008 N007 OTA g=30u iout=1.335u Vhigh=1e308 Vlow=-1e308
G1 5 N010 N008 N007 200n
D9 N008 N007 DLIM
C14 N006 3 4f
C7 4 1 2p Rser=2k Rpar=240G noiseless
C13 4 5 1000p Rpar=255k noiseless
C15 N006 N010 50f Rser=1Meg noiseless
C1 N005 0 260f Rpar=1Meg noiseless
G2 0 N007 5 0 .5m
G4 0 N007 4 0 .5m
C18 N007 0 200p Rpar=1K noiseless
D1 2 1 DIN
C4 4 2 2p Rser=2k Rpar=240G noiseless
C5 1 5 2p Rser=2k Rpar=240G noiseless
C6 2 5 2p Rser=2k Rpar=240G noiseless
D2 4 5 DPOW
D3 2 5 DBIAS
D4 1 5 DBIAS
.model NI VDMOS(Vto=300m kp=30m lambda=.01)
.model PI VDMOS(Vto=-300m Kp=30m lambda=.01 pchan is=0)
.model DLIM D(Ron=100k Roff=70Meg Vfwd=200m Vrev=200m epsilon=10m revepsilon=10m noiseless)
.model DLIMN D(Ron=100k Roff=100Meg Vfwd=1.3 Vrev=-300m epsilon=.1  noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.25 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DIN D(Ron=1k Roff=20Meg Vfwd=1.5 epsilon=.1 Vrev=1.5 revepsilon=.1 noiseless)
.model DBIAS D(Ron=10G Roff=100G Vfwd=.3 epsilon=.1 ilimit=18p noiseless)
.model DPOW D(Ron=1k Vfwd=.5 epsilon=.1 ilimit=37u noiseless)
.ends LT6011
*
.subckt LT6200 1 2 3 4 5 6
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.16p ink=351 incm=2.7p incmk=351
B1 0 N005 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-3.21n
B2 N005 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 N005 0 .1f Rpar=100K noiseless
M1 3 N013 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N006 4 4 PI temp=27
C3 4 N006 .1f Rser=25Meg noiseless
C11 3 5 1p Rpar=1g noiseless
C12 N013 5 .1f Rser=25Meg noiseless
D6 N013 5 DLIMN
A4 0 N005 0 0 0 0 N007 0 OTA g=1u linear en=1.08n enk=2.7k Vhigh=1e308 Vlow=-1e308
C16 N011 3 63f
D12 1 4 DESD
D13 2 4 DESD
G1 5 N013 N011 N009 10n
C7 4 1 1.55p Rpar=11Meg noiseless
C17 0 N007 8f Rpar=1Meg noiseless
G4 0 N008 N007 0 1m
D14 4 N006 DLIMP
L1 N008 0 5.73µ Cpar=7.46f Rser=1.08k Rpar=13.5k noiseless
D15 1 2 DIN
D16 N014 1 DBIA2
D3 N014 2 DBIA2
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 1.55p Rpar=11Meg noiseless
C6 1 5 1.55p Rpar=11Meg noiseless
C8 2 5 1.55p Rpar=11Meg noiseless
C4 2 1 1.1p Rpar=2.1k Noiseless
D5 N014 1 DBIA3
D8 N014 2 DBIA3
A6 N008 0 N015 N009 N009 N009 N011 N009 OTA g=60u iout=3.15u Rout=800k Vlow=-1e308 Vhigh=1e308
A2 4 6 N009 N009 N009 N015 N009 N009 SCHMITT Vt=1.5 Vh=10m tau=20n
D9 4 6 DSHUT
A5 N009 N011 N015 N009 N009 N009 N006 N009 OTA g=52.5n ref=-.03 linear Vlow=-1e308 Vhigh=1e308
D17 2 N004 DBIA1
D18 1 N004 DBIA1
S1 5 N014 N009 N015 SWB
S2 N010 5 N015 N009 SWB2
C5 N014 5 20p Rpar=1Meg noiseless
D4 4 N014 DBIAZ1
D7 4 N010 DBIAZ2
C14 4 N010 20p Rpar=100g noiseless
G5 0 N009 5 0 50m
G6 0 N009 4 0 50m
C15 N009 0 100p Rpar=10
S3 N010 N004 N015 N009 SWB3
S4 4 5 N015 N009 SWP
C13 4 5 1000p
.model DBIA1 D(Ron=10k Roff=.62Meg  Vfwd=0  ilimit=7.6u epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1g Vfwd=-.1 epsilon=.2 ilimit=7.6u noiseless)
.model DBIA3 D(Ron=1k Roff=1g Vfwd=2.9 epsilon=.1 ilimit=8.4u noiseless)
.model DBIAZ1 D(Ron=100 Roff=100G Vfwd=.95 epsilon=10m ilimit=1.2m noiseless)
.model DBIAZ2 D(Ron=1 Roff=100G Vfwd=.95 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model NI VDMOS(Vto=300m kp=55m lambda=.01)
.model PI VDMOS(Vto=-300m kp=55m lambda=.01 pchan is=0)
.model DSHUT D(Ron=20k Roff=1g Vfwd=.6 epsilon=100m noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=2.1 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model SWP SW(Roff=1G Ron=1.3k vt=.5 vh=-.1)
.model SWB SW(Ron=1 Roff=5G vt=-.5 vh=-.1)
.model SWB2 SW(level=2 Ron=10 Roff=500g vt=.5 vh=-.1 ilimit=6.43m)
.model SWB3 SW(Ron=1k Roff=100g vt=.5 vh=-.1)
.ends LT6200
*
.subckt LT6200-5 1 2 3 4 5 6
B1 0 N005 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-3.21n
B2 N005 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 N005 0 .1f Rpar=100K noiseless
M1 3 N013 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N006 4 4 PI temp=27
C3 4 N006 .2f Rser=35Meg noiseless
C11 3 5 1p Rpar=1g noiseless
C12 N013 5 .2f Rser=35Meg noiseless
D6 N013 5 DLIMN
A4 0 N005 0 0 0 0 N007 0 OTA g=1u linear en=1.08n enk=2.7k Vhigh=100m Vlow=-100m
C16 N011 3 10f
D12 1 4 DESD
D13 2 4 DESD
G1 5 N013 N011 N009 10n
C7 4 1 1.55p Rpar=11Meg noiseless
C17 0 N007 10f Rpar=1Meg noiseless
G4 0 N008 N007 0 1m
D14 4 N006 DLIMP
L1 N008 0 4.44µ Cpar=11.37f Rser=1.12k Rpar=9.333k noiseless
D15 1 2 DIN
D16 N014 1 DBIA2
D3 N014 2 DBIA2
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 1.55p Rpar=11Meg noiseless
C6 1 5 1.55p Rpar=11Meg noiseless
C8 2 5 1.55p Rpar=11Meg noiseless
C4 2 1 1.1p Rpar=2.1k Noiseless
D5 N014 1 DBIA3
D8 N014 2 DBIA3
A6 N008 0 N015 N009 N009 N009 N011 N009 OTA g=60u iout=2.61u Rout=800k Vlow=-1e308 Vhigh=1e308
A2 4 6 N009 N009 N009 N015 N009 N009 SCHMITT Vt=1.5 Vh=10m tau=20n
D9 4 6 DSHUT
A5 N009 N011 N015 N009 N009 N009 N006 N009 OTA g=52.5n ref=-.03 linear Vlow=-1e308 Vhigh=1e308
D17 2 N004 DBIA1
D18 1 N004 DBIA1
S1 5 N014 N009 N015 SWB
S2 N010 5 N015 N009 SWB2
C5 N014 5 20p Rpar=1Meg noiseless
D4 4 N014 DBIAZ1
D7 4 N010 DBIAZ2
C14 4 N010 20p Rpar=100g noiseless
G5 0 N009 5 0 50m
G6 0 N009 4 0 50m
C15 N009 0 100p Rpar=10
S3 N010 N004 N015 N009 SWB3
S4 4 5 N015 N009 SWP
C13 4 5 1000p
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.16p ink=351 incm=2.7p incmk=351
.model DBIA1 D(Ron=10k Roff=.62Meg  Vfwd=0  ilimit=7.6u epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1g Vfwd=-.1 epsilon=.2 ilimit=7.6u noiseless)
.model DBIA3 D(Ron=1k Roff=1g Vfwd=2.9 epsilon=.1 ilimit=8.4u noiseless)
.model DBIAZ1 D(Ron=100 Roff=100G Vfwd=.95 epsilon=10m ilimit=1.2m noiseless)
.model DBIAZ2 D(Ron=1 Roff=100G Vfwd=.95 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model NI VDMOS(Vto=300m kp=55m lambda=.01)
.model PI VDMOS(Vto=-300m kp=55m lambda=.01 pchan is=0)
.model DSHUT D(Ron=20k Roff=1g Vfwd=.6 epsilon=100m noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=2.1 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model SWP SW(Roff=1G Ron=1.3k vt=.5 vh=-.1)
.model SWB SW(Ron=1 Roff=5G vt=-.5 vh=-.1)
.model SWB2 SW(level=2 Ron=10 Roff=500g vt=.5 vh=-.1 ilimit=6.43m)
.model SWB3 SW(Ron=1k Roff=100g vt=.5 vh=-.1)
.ends LT6200-5
*
.subckt LT6200-10 1 2 3 4 5 6
B1 0 X0 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-3.21n
B2 X0 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 X0 0 .1f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N005 4 4 PI temp=27
C3 4 N005 .2f Rser=35Meg noiseless
C11 3 5 1p Rpar=1g noiseless
C12 N012 5 .2f Rser=35Meg noiseless
D6 N012 5 DLIMN
A4 0 X0 0 0 0 0 N006 0 OTA g=1u linear en=1.08n enk=2.7k Vhigh=60m Vlow=-60m
C16 N010 3 5.8f
D12 1 4 DESD
D13 2 4 DESD
G1 5 N012 N010 N008 10n
C7 4 1 1.55p Rpar=11Meg noiseless
C17 0 N006 8f Rpar=1Meg noiseless
G4 0 N007 N006 0 1m
D14 4 N005 DLIMP
L1 N007 0 4.83µ Cpar=26.5f Rser=1.21k Rpar=5.76k noiseless
D15 1 2 DIN
D16 N013 1 DBIA2
D3 N013 2 DBIA2
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 1.55p Rpar=11Meg noiseless
C6 1 5 1.55p Rpar=11Meg noiseless
C8 2 5 1.55p Rpar=11Meg noiseless
C4 2 1 1.1p Rpar=2.1k Noiseless
D5 N013 1 DBIA3
D8 N013 2 DBIA3
A6 N007 0 N014 N008 N008 N008 N010 N008 OTA g=60u iout=3.58u Rout=800k Vlow=-1e308 Vhigh=1e308
A2 4 6 N008 N008 N008 N014 N008 N008 SCHMITT Vt=1.5 Vh=10m tau=20n
D9 4 6 DSHUT
A5 N008 N010 N014 N008 N008 N008 N005 N008 OTA g=52.5n ref=-.03 linear Vlow=-1e308 Vhigh=1e308
D17 2 N004 DBIA1
D18 1 N004 DBIA1
S1 5 N013 N008 N014 SWB
S2 N009 5 N014 N008 SWB2
C5 N013 5 20p Rpar=1Meg noiseless
D4 4 N013 DBIAZ1
D7 4 N009 DBIAZ2
C14 4 N009 20p Rpar=100g noiseless
G5 0 N008 5 0 50m
G6 0 N008 4 0 50m
C15 N008 0 100p Rpar=10
S3 N009 N004 N014 N008 SWB3
S4 4 5 N014 N008 SWP
C13 4 5 1000p
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.16p ink=351 incm=2.7p incmk=351
.model DBIA1 D(Ron=10k Roff=.62Meg  Vfwd=0  ilimit=7.6u epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1g Vfwd=-.1 epsilon=.2 ilimit=7.6u noiseless)
.model DBIA3 D(Ron=1k Roff=1g Vfwd=2.9 epsilon=.1 ilimit=8.4u noiseless)
.model DBIAZ1 D(Ron=100 Roff=100G Vfwd=.95 epsilon=10m ilimit=1.2m noiseless)
.model DBIAZ2 D(Ron=1 Roff=100G Vfwd=.95 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model NI VDMOS(Vto=300m kp=55m lambda=.01)
.model PI VDMOS(Vto=-300m kp=55m lambda=.01 pchan is=0)
.model DSHUT D(Ron=20k Roff=1g Vfwd=.6 epsilon=100m noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=2.1 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model SWP SW(Roff=1G Ron=1.3k vt=.5 vh=-.1)
.model SWB SW(Ron=1 Roff=5G vt=-.5 vh=-.1)
.model SWB2 SW(level=2 Ron=10 Roff=500g vt=.5 vh=-.1 ilimit=6.43m)
.model SWB3 SW(Ron=1k Roff=100g vt=.5 vh=-.1)
.ends LT6200-10
*
.subckt LT6201 1 2 3 4 5
B1 0 N005 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-3.21n
B2 N005 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 N005 0 .1f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N006 4 4 PI temp=27
C3 4 N006 .1f Rser=25Meg noiseless
C11 3 5 1p Rpar=1g noiseless
C12 N012 5 .1f Rser=25Meg noiseless
D6 N012 5 DLIMN
A4 0 N005 0 0 0 0 N007 0 OTA g=1u linear en=1.08n enk=2.7k Vhigh=1e308 Vlow=-1e308
C16 N010 3 63f
D12 1 4 DESD
D13 2 4 DESD
G1 5 N012 N010 N009 10n
C7 4 1 1.55p Rpar=11Meg noiseless
C17 0 N007 8f Rpar=1Meg noiseless
G4 0 N008 N007 0 1m
D14 4 N006 DLIMP
L1 N008 0 5.73µ Cpar=7.46f Rser=1.08k Rpar=13.5k noiseless
D15 1 2 DIN
D16 N004 1 DBIA2
D3 N004 2 DBIA2
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 1.55p Rpar=11Meg noiseless
C6 1 5 1.55p Rpar=11Meg noiseless
C8 2 5 1.55p Rpar=11Meg noiseless
C4 2 1 1.1p Rpar=2.1k Noiseless
D5 N004 1 DBIA3
D8 N004 2 DBIA3
D17 2 N004 DBIA1
D18 1 N004 DBIA1
C5 N004 5 20p Rpar=1Meg noiseless
D7 4 N004 DBIAZ2
C14 4 N004 20p Rpar=100g noiseless
G5 0 N009 5 0 50m
G6 0 N009 4 0 50m
C15 N009 0 100p Rpar=10
C13 4 5 1000p
R3 4 5 1.3k noiseless
D10 N004 5 DBIAZ3
A3 N008 0 N009 N009 N009 N009 N010 N009 OTA g=60u iout=3.15u Rout=800k Vlow=-1e308 Vhigh=1e308
A6 N009 N010 N009 N009 N009 N009 N006 N009 OTA linear g=52.5n ref=-.03 Vlow=-1e308 Vhigh=1e308
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.16p ink=351 incm=2.7p incmk=351
.model DBIA1 D(Ron=10k Roff=.62Meg  Vfwd=0  ilimit=7.6u epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1g Vfwd=-.1 epsilon=.2 ilimit=7.6u noiseless)
.model DBIA3 D(Ron=1k Roff=1g Vfwd=2.9 epsilon=.1 ilimit=8.4u noiseless)
.model DBIAZ2 D(Ron=1 Roff=100G Vfwd=.95 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model NI VDMOS(Vto=300m kp=55m lambda=.01)
.model PI VDMOS(Vto=-300m kp=55m lambda=.01 pchan is=0)
.model DSHUT D(Ron=20k Roff=1g Vfwd=.6 epsilon=100m noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=2.1 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model DBIAZ3 D(Ron=10 Roff=100g Vfwd=.3 epsilon=.1 ilimit=6.43m)
.ends LT6201
*
.subckt LT6202 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=749f ink=196 incm=.8p incmk=196
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-2.21n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C10 N004 0 .1f Rpar=100K noiseless
D4 4 N011 DBIAZ
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N005 4 4 PI temp=27
C3 4 N005 1f Rser=150Meg noiseless
A3 N006 N009 5 5 5 5 N005 5 OTA g=35n ref=-.04 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=1g noiseless
C12 N012 5 1f Rser=150Meg noiseless
D10 1 N011 DBIA1
D11 2 N011 DBIA1
D6 N012 5 DLIMN
A4 0 N004 0 0 0 0 N007 0 OTA g=1u linear en=2n enk=1.45k Vhigh=1e308 Vlow=-1e308
C16 N009 3 400f
A5 N008 0 N006 N006 N006 N006 N009 N006 OTA g=258u iout=10.1u Rout=800k Vhigh=1e308 Vlow=-1e308
D12 1 4 DESD
D13 2 4 DESD
G1 5 N012 N009 N006 5n
C5 N011 5 20p Rpar=10k noiseless
C7 4 1 .9p Rpar=8Meg noiseless
C13 4 5 1000p
D7 4 5 DP
C17 0 N007 8f Rpar=1Meg noiseless
G4 0 N008 N007 0 1m
D14 4 N005 DLIMP
L1 N008 0 5.88µ Cpar=13.3f Rser=1.11k Rpar=10.09k noiseless
D15 1 2 DIN
D16 N011 1 DBIA2
D3 N011 2 DBIA2
D1 5 2 DESD
D2 5 2 DESD
C1 4 2 .9p Rpar=8Meg noiseless
C6 1 5 .9p Rpar=8Meg noiseless
C8 2 5 .9p Rpar=8Meg noiseless
C4 2 1 .6p Rpar=12k Noiseless
D5 N011 1 DBIA3
D8 N011 2 DBIA3
G2 0 N006 5 0 .5m
G3 0 N006 4 0 .5m
C14 N006 0 .2p Rpar=1K
.model DP D(Roff=1T Ron=1k Vfwd=0.5 ilimit=1.28m noiseless)
.model DBIA1 D(Ron=10k Roff=10Meg  Vfwd=0  ilimit=.7u epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1g Vfwd=-.1 epsilon=.2 ilimit=1.4u noiseless)
.model DBIA3 D(Ron=1k Roff=1g Vfwd=2.8 epsilon=.1 ilimit=.9u noiseless)
.model DBIAZ D(Ron=100 Roff=100G Vfwd=1.1 epsilon=10m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model NI VDMOS(Vto=300m kp=20m lambda=.01)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=2.45 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model PI VDMOS(Vto=-300m kp=20m lambda=.01 pchan is=0)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2.45 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.model DIN D(Ron=1k Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.ends LT6202
*
.subckt LT6205 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=3.9p ink=588
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-2,.1), V(5)-.2, .1)+1n*V(1)-320p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-1.9,.1), V(5)-.21, .1)+1n*V(2)
C10 N004 0 4f Rpar=100K noiseless
M1 3 N011 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
M2 3 N005 4 4 PI temp=27
C3 4 N005 10f Rser=120Meg noiseless
A3 N008 N009 5 5 5 5 N005 5 OTA g=20n ref=-.052 linear Vlow=-1e308 Vhigh=1e308
C11 3 5 1p Rpar=1g noiseless
C12 N011 5 10f Rser=120Meg noiseless
D10 4 2 DBIA1
D6 N011 5 DLIMN
A4 0 N004 0 0 0 0 N007 0 OTA g=1m linear en=8.8n enk=470 Vhigh=1e308 Vlow=-1e308
C16 N009 3 .75p
A5 N006 0 N008 N008 N008 N008 N009 N008 OTA g=690u iout=.77m Rout=800k Vhigh=1e308 Vlow=-1e308
D12 1 4 DESD
D13 2 4 DESD
G1 5 N011 N009 N008 7n
C7 4 1 1p Rpar=20Meg noiseless
C13 4 5 1000p Rpar=22.5k noiseless
D7 4 5 DP
C17 0 N007 .8p Rpar=1k noiseless
D14 4 N005 DLIMP
D15 1 2 DIN
D1 5 2 DESD
D2 5 1 DESD
C1 4 2 1p Rpar=20Meg noiseless
C6 1 5 1p Rpar=20Meg noiseless
C8 2 5 1p Rpar=20Meg noiseless
G2 0 N008 4 0 .5m
G3 0 N008 5 0 .5m
C14 N008 0 .2p Rpar=1K noiseless
C18 N005 3 10f Rser=200Meg noiseless
C19 3 N011 10f Rser=200Meg noiseless
D9 N006 0 DX
G5 0 N006 N007 0 .18m
C4 0 N006 .8p Rpar=10k noiseless
A2 0 N007 0 0 0 0 N006 0 OTA g=.9m iout=20u Vhigh=1e308 Vlow=-1e308
D3 4 1 DBIA1
D4 4 2 DBIA2
D5 4 1 DBIA2
.model DP D(Roff=1G Ron=100 Vfwd=0.5 ilimit=2.125m noiseless)
.model NI VDMOS(Vto=300m kp=20m lambda=.01)
.model PI VDMOS(Vto=-300m kp=20m lambda=.01 pchan)
.model DBIA1 D(Ron=1.5Meg Roff=1G  Vfwd=1.7 epsilon=.1 noiseless)
.model DBIA2 D(Ron=10k Roff=1G Vfwd=1.5 epsilon=.1 ilimit=7u noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.model DIN D(Ron=1k Roff=100g Vfwd=1.5 Vrev=1.5 epsilon=100m revepsilon=100m noiseless)
.model DX D(Ron=1k Roff=1k Vfwd=0 Vrev=0 ilimit=.2m revilimit=.2m)
.model DLIMN D(Ron=1Meg Roff=5g Vfwd=3.2 Vrev=340m epsilon=700m revepsilon=100m  noiseless)
.model DLIMP D(Ron=100k Roff=1g Vfwd=2 Vrev=340m epsilon=500m revepsilon=100m noiseless)
.ends LT6205
*
.subckt LT6230 1 2 3 4 5 6
A1 2 1 0 0 0 0 0 0 OTA g=0 in=1p ink=33.5 incm=2.2p incmk=33.5
C10 N004 0 .5f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N012 5 DLIMN1
M2 3 N008 4 4 PI temp=27
D8 4 N008 DLIMP1
C3 4 N008 1f Rser=50Meg noiseless
A3 N009 N010 5 5 5 5 N008 5 OTA g=20n ref=-.94 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N012 5 1f Rser=50Meg noiseless
C16 N010 3 50f
A5 N007 0 N009 N009 N009 N009 N010 N009 OTA g=65u iout=3.78u Vhigh=1e308 Vlow=-1e308
G1 5 N012 N010 N009 20n
C7 4 1 1.45p Rser=200 Rpar=40Meg noiseless
C13 4 5 1000p Rpar=190Meg noiseless
S1 N010 N009 0 N005 SHUT2
C1 N006 0 17p
C17 5 6 500f Rpar=100Meg noiseless
G2 0 N009 5 0 .5m
G4 0 N009 4 0 .5m
C18 N009 0 200p Rpar=1K noiseless
D1 2 1 DIN
D3 4 6 DSHUT
S4 N008 4 0 N005 SHUT1
S2 5 N012 0 N005 SHUT1
S3 5 2 N005 0 SBIAS
S5 5 1 N005 0 SBIAS
S7 4 5 N005 0 SPOW
D2 4 N008 DLIMP2
D4 N012 5 DLIMN2
C8 2 1 6.25p Rser=100 noiseless
G3 0 N007 N006 0 1m
L1 N007 0 8.6µ Cpar=12.7f Rser=1.09k Rpar=12.1k noiseless
D6 N006 0 DLIM1
C4 4 2 1.45p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.45p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.45p Rser=200 Rpar=40Meg noiseless
C9 N007 3 15f
D7 N010 N009 DLIM2
A2 6 4 0 0 0 N005 0 0 SCHMITT Vt=-.4 trise=1u tfall=90u
A4 0 N004 0 0 0 0 N006 0 OTA g=1m linear enk=201 en=2.26n/(.4+ 110n*dnlim(15Meg-freq,10k,7Meg) + 20n*dnlim(freq-30Meg,10k,5Meg)) enk=201 Vlow=-1e308 Vhigh=1e308
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-uplim(dnlim(-.119+.2059*V(4,5),.56,.01),.91,.01),.1), V(5)+uplim(dnlim(.38+.2059*V(4,5),1.06,.01),1.41,.01), .1)+1n*V(1)-1.035n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-uplim(dnlim(-.129+.2059*V(4,5),.55,.01),.9,.01),.1), V(5)+uplim(dnlim(.37+.2059*V(4,5),1.05,.01),1.4,.01), .1)+1n*V(2)
.model DSHUT D(Ron=170k Roff=1G Vfwd=2 epsilon=100m noiseless)
.model DIN D(Ron=100 Roff=7.5k Vfwd=.8 epsilon=.1 Vrev=.8 revepsilon=.1 noiseless)
.model SBIAS SW(level=2 Ron=5k Roff=10G vt=.5 vh=-.1 ilimit=5u vser=.8 noiseless )
.model SPOW SW(Ron=92.6k Roff=1G vt=.5 vh=.1 noiseless)
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=120m Rd=8)
.model PI VDMOS(Vto=-300m Kp=120m Rd=8 pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM1 D(Ron=1 Roff=1k Vfwd=70m epsilon=10m Vrev=70m revepsilon=10m noiseless)
.model DLIM2 D(Ron=1k Roff=70Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6230
*
.subckt LT6230-10 1 2 3 4 5 6
C10 N004 0 2f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N012 5 DLIMN1
M2 3 N008 4 4 PI temp=27
D8 4 N008 DLIMP1
C3 4 N008 1f Rser=50Meg noiseless
A3 N009 N010 5 5 5 5 N008 5 OTA g=20n ref=-.94 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N012 5 1f Rser=50Meg noiseless
C16 N010 3 8f
A5 N007 0 N009 N009 N009 N009 N010 N009 OTA g=65u asym isource=4u isink=-3.8u Vhigh=1e308 Vlow=-1e308
G1 5 N012 N010 N009 20n
C7 4 1 1.45p Rser=200 Rpar=40Meg noiseless
C13 4 5 1000p Rpar=190Meg noiseless
S1 N010 N009 0 N005 SHUT2
C1 N006 0 25p
C17 5 6 500f Rpar=100Meg noiseless
G2 0 N009 5 0 .5m
G4 0 N009 4 0 .5m
C18 N009 0 200p Rpar=1K noiseless
D1 2 1 DIN
D3 4 6 DSHUT
S4 N008 4 0 N005 SHUT1
S2 5 N012 0 N005 SHUT1
S3 5 2 N005 0 SBIAS
S5 5 1 N005 0 SBIAS
S7 4 5 N005 0 SPOW
D2 4 N008 DLIMP2
D4 N012 5 DLIMN2
C8 2 1 6.25p Rser=100 noiseless
G3 0 N007 N006 0 1m
L1 N007 0 8.6µ Cpar=12.7f Rser=1.09k Rpar=12.1k noiseless
D6 N006 0 DLIM1
C4 4 2 1.45p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.45p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.45p Rser=200 Rpar=40Meg noiseless
D7 N010 N009 DLIM2
A2 6 4 0 0 0 N005 0 0 SCHMITT Vt=-.4 trise=1u tfall=90u
A1 2 1 0 0 0 0 0 0 OTA g=0 in=1p ink=33.5 incm=2.2p incmk=33.5
A4 0 N004 0 0 0 0 N006 0 OTA g=1m linear enk=201 en=2.26n/(.4+ 110n*dnlim(15Meg-freq,10k,7Meg) + 20n*dnlim(freq-30Meg,10k,5Meg)) enk=201 Vlow=-1e308 Vhigh=1e308
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-uplim(dnlim(-.119+.2059*V(4,5),.56,.01),.91,.01),.1), V(5)+uplim(dnlim(.38+.2059*V(4,5),1.06,.01),1.41,.01), .1)+1n*V(1)-1.035n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-uplim(dnlim(-.129+.2059*V(4,5),.55,.01),.9,.01),.1), V(5)+uplim(dnlim(.37+.2059*V(4,5),1.05,.01),1.4,.01), .1)+1n*V(2)
.model DSHUT D(Ron=170k Roff=1G Vfwd=2 epsilon=100m noiseless)
.model DIN D(Ron=100 Roff=7.5k Vfwd=.8 epsilon=.1 Vrev=.8 revepsilon=.1 noiseless)
.model SBIAS SW(level=2 Ron=5k Roff=10G vt=.5 vh=-.1 ilimit=5u vser=.8 noiseless )
.model SPOW SW(Ron=92.6k Roff=1G vt=.5 vh=.1 noiseless)
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=120m Rd=8)
.model PI VDMOS(Vto=-300m Kp=120m Rd=8 pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM1 D(Ron=1 Roff=1k Vfwd=60m epsilon=10m Vrev=83m revepsilon=10m noiseless)
.model DLIM2 D(Ron=1k Roff=70Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6230-10
*
.subckt LT6231 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=2.4p ink=33.5
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-uplim(dnlim(-.119+.2059*V(4,5),.56,.01),.91,.01),.1), V(5)+uplim(dnlim(.38+.2059*V(4,5),1.06,.01),1.41,.01), .1)+1n*V(1)-1.035n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-uplim(dnlim(-.129+.2059*V(4,5),.55,.01),.9,.01),.1), V(5)+uplim(dnlim(.37+.2059*V(4,5),1.05,.01),1.4,.01), .1)+1n*V(2)
C10 N004 0 .5f Rpar=100K noiseless
M1 3 N011 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N011 5 DLIMN1
M2 3 N007 4 4 PI temp=27
D8 4 N007 DLIMP1
C3 4 N007 1f Rser=50Meg noiseless
A3 N008 N009 5 5 5 5 N007 5 OTA g=20n ref=-.94 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N011 5 1f Rser=50Meg noiseless
C16 N009 3 50f
A5 N006 0 N008 N008 N008 N008 N009 N008 OTA g=65u iout=3.78u Vhigh=1e308 Vlow=-1e308
G1 5 N011 N009 N008 20n
C7 4 1 1.45p Rser=200 Rpar=40Meg noiseless
C13 4 5 100p Rpar=92.6k noiseless
C1 N005 0 17p
G2 0 N008 5 0 .5m
G4 0 N008 4 0 .5m
C18 N008 0 200p Rpar=1K noiseless
D1 2 1 DIN
D2 4 N007 DLIMP2
D4 N011 5 DLIMN2
C8 2 1 6.25p Rser=100 noiseless
G3 0 N006 N005 0 1m
L1 N006 0 8.6µ Cpar=12.7f Rser=1.09k Rpar=12.1k noiseless
D6 N005 0 DLIM1
C4 4 2 1.45p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.45p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.45p Rser=200 Rpar=40Meg noiseless
C9 N006 3 15f
D7 N009 N008 DLIM2
D3 2 5 DBIAS
D9 1 5 DBIAS
A2 0 N004 0 0 0 0 N005 0 OTA g=1m linear enk=201 en=2.26n/(.4+ 110n*dnlim(15Meg-freq,10k,7Meg) + 20n*dnlim(freq-30Meg,10k,5Meg)) enk=201 Vlow=-1e308 Vhigh=1e308
.model DSHUT D(Ron=170k Roff=1G Vfwd=2 epsilon=100m noiseless)
.model DIN D(Ron=100 Roff=7.5k Vfwd=.8 epsilon=.1 Vrev=.8 revepsilon=.1 noiseless)
.model DBIAS D(Ron=5k Roff=1G Vfwd=.75 epsilon=50m ilimit=5u noiseless)
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=120m Rd=8)
.model PI VDMOS(Vto=-300m Kp=120m Rd=8 pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM1 D(Ron=1 Roff=1k Vfwd=70m epsilon=10m Vrev=70m revepsilon=10m noiseless)
.model DLIM2 D(Ron=1k Roff=70Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=1.05 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6231
*
.subckt LT6233 1 2 3 4 5 6
A1 2 1 0 0 0 0 0 0 OTA g=0 in=.43p ink=38 incm=.65p incmk=38
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.9,.1), V(5)+1.4, .1)+1n*V(1)-.6n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.89,.1), V(5)+1.39, .1)+1n*V(2)
C10 N004 0 .5f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N012 5 DLIMN1
M2 3 N008 4 4 PI temp=27
D8 4 N008 DLIMP1
C3 4 N008 1f Rser=50Meg noiseless
A3 N009 N010 5 5 5 5 N008 5 OTA g=20n ref=-.415 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N012 5 1f Rser=50Meg noiseless
A4 0 N004 0 0 0 0 N006 0 OTA g=1m asym en=1.9n enk=74 isource=78u Isink=-98u Vlow=-1e308 Vhigh=1e308
C16 N010 3 138f
A5 N007 0 N009 N009 N009 N009 N010 N009 OTA g=50u iout=2.75u Vhigh=1e308 Vlow=-1e308
G1 5 N012 N010 N009 20n
C7 4 1 1.25p Rser=200 Rpar=40Meg noiseless
C13 4 5 1000p Rpar=190Meg noiseless
S1 N010 N009 0 N005 SHUT2
C1 N006 0 35p Rpar=1k noiseless
C17 5 6 500f Rpar=100Meg noiseless
G2 0 N009 5 0 .5m
G4 0 N009 4 0 .5m
C18 N009 0 200p Rpar=1K noiseless
D1 2 1 DIN
D3 4 6 DSHUT
S4 N008 4 0 N005 SHUT1
S2 5 N012 0 N005 SHUT1
S3 5 2 N005 0 SBIAS
S5 5 1 N005 0 SBIAS
D2 4 N008 DLIMP2
D4 N012 5 DLIMN2
C8 2 1 1.7p Rser=100 Rpar=25k noiseless
G3 0 N007 N006 0 1m
L1 N007 0 18.8µ Cpar=52f Rser=1.12k Rpar=9.33k noiseless
C4 4 2 1.25p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.25p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.25p Rser=200 Rpar=40Meg noiseless
D7 N010 N009 DLIM2
A2 6 4 0 0 0 N005 0 0 SCHMITT Vt=-.4 trise=1u tfall=90u
.model DSHUT D(Ron=170k Roff=1G Vfwd=2 epsilon=100m noiseless)
.model DIN D(Ron=1k Roff=1Meg Vfwd=.7 epsilon=.1 Vrev=.7 revepsilon=.1 noiseless)
.model SBIAS SW(level=2 Ron=5k Roff=10G vt=.5 vh=-.1 ilimit=1.5u vser=.8 noiseless )
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=400m)
.model PI VDMOS(Vto=-300m Kp=400m pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM2 D(Ron=1k Roff=70Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6233
*
.subckt LT6233-10 1 2 3 4 5 6
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.9,.1), V(5)+1.4, .1)+1n*V(1)-.6n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.89,.1), V(5)+1.39, .1)+1n*V(2)
C10 N004 0 .5f Rpar=100K noiseless
M1 3 N012 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N012 5 DLIMN1
M2 3 N008 4 4 PI temp=27
D8 4 N008 DLIMP1
C3 4 N008 1f Rser=50Meg noiseless
A3 N009 N010 5 5 5 5 N008 5 OTA g=20n ref=-.415 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N012 5 1f Rser=50Meg noiseless
A4 0 N004 0 0 0 0 N006 0 OTA g=1m asym en=1.9n enk=74 isource=83u isink=-103.5u Vlow=-1e308 Vhigh=1e308
C16 N010 3 245f
A5 N007 0 N009 N009 N009 N009 N010 N009 OTA g=500u iout=44u Vhigh=1e308 Vlow=-1e308
G1 5 N012 N010 N009 20n
C7 4 1 1.25p Rser=200 Rpar=40Meg noiseless
C13 4 5 1000p Rpar=190Meg noiseless
S1 N010 N009 0 N005 SHUT2
C1 N006 0 50p Rpar=1k noiseless
C17 5 6 500f Rpar=100Meg noiseless
G2 0 N009 5 0 .5m
G4 0 N009 4 0 .5m
C18 N009 0 200p Rpar=1K noiseless
D1 2 1 DIN
D3 4 6 DSHUT
S4 N008 4 0 N005 SHUT1
S2 5 N012 0 N005 SHUT1
S3 5 2 N005 0 SBIAS
S5 5 1 N005 0 SBIAS
D2 4 N008 DLIMP2
D4 N012 5 DLIMN2
C8 2 1 1.7p Rser=100 Rpar=25k noiseless
G3 0 N007 N006 0 1m
L1 N007 0 15.3µ Cpar=66f Rser=1.16k Rpar=7.25k noiseless
C4 4 2 1.25p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.25p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.25p Rser=200 Rpar=40Meg noiseless
D7 N010 N009 DLIM2
A2 6 4 0 0 0 N005 0 0 SCHMITT Vt=-.4 trise=1u tfall=90u
A1 2 1 0 0 0 0 0 0 OTA g=0 in=.43p ink=38 incm=.65p incmk=38
.model DSHUT D(Ron=170k Roff=1G Vfwd=2 epsilon=100m noiseless)
.model DIN D(Ron=1k Roff=1Meg Vfwd=.7 epsilon=.1 Vrev=.7 revepsilon=.1 noiseless)
.model SBIAS SW(level=2 Ron=5k Roff=10G vt=.5 vh=-.1 ilimit=1.5u vser=.8 noiseless )
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=400m)
.model PI VDMOS(Vto=-300m Kp=400m pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM2 D(Ron=1k Roff=7Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6233-10
*
.subckt LT6234 1 2 3 4 5
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.9,.1), V(5)+1.4, .1)+1n*V(1)-.6n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.89,.1), V(5)+1.39, .1)+1n*V(2)
C10 N004 0 .5f Rpar=100K noiseless
M1 3 N011 5 5 NI temp=27
C2 4 3 1p Rpar=200Meg noiseless
D5 N011 5 DLIMN1
M2 3 N007 4 4 PI temp=27
D8 4 N007 DLIMP1
C3 4 N007 1f Rser=50Meg noiseless
A3 N008 N009 5 5 5 5 N007 5 OTA g=20n ref=-.415 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=200Meg noiseless
C12 N011 5 1f Rser=50Meg noiseless
A4 0 N004 0 0 0 0 N005 0 OTA g=1m asym en=1.9n enk=74 isource=78u Isink=-98u Vlow=-1e308 Vhigh=1e308
C16 N009 3 138f
A5 N006 0 N008 N008 N008 N008 N009 N008 OTA g=50u iout=2.75u Vhigh=1e308 Vlow=-1e308
G1 5 N011 N009 N008 20n
C7 4 1 1.25p Rser=200 Rpar=40Meg noiseless
C13 4 5 1000p Rpar=190Meg noiseless
C1 N005 0 35p Rpar=1k noiseless
G2 0 N008 5 0 .5m
G4 0 N008 4 0 .5m
C18 N008 0 200p Rpar=1K noiseless
D1 2 1 DIN
D2 4 N007 DLIMP2
D4 N011 5 DLIMN2
C8 2 1 1.7p Rser=100 Rpar=25k noiseless
G3 0 N006 N005 0 1m
L1 N006 0 18.8µ Cpar=52f Rser=1.12k Rpar=9.33k noiseless
C4 4 2 1.25p Rser=200 Rpar=40Meg noiseless
C5 1 5 1.25p Rser=200 Rpar=40Meg noiseless
C6 2 5 1.25p Rser=200 Rpar=40Meg noiseless
D7 N009 N008 DLIM2
D3 1 5 DBIAS
D6 2 5 DBIAS
A1 2 1 0 0 0 0 0 0 OTA g=0 in=.43p ink=38 incm=.65p incmk=38
.model DIN D(Ron=1k Roff=1Meg Vfwd=.7 epsilon=.1 Vrev=.7 revepsilon=.1 noiseless)
.model DBIAS D(Ron=5k Roff=10G vfwd=.75 epsilon=.1 ilimit=1.5u noiseless)
.model SHUT1 SW(Ron=10k Roff=100G vt=-.8 vh=-100m Vser=295m noiseless)
.model SHUT2 SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=400m)
.model PI VDMOS(Vto=-300m Kp=400m pchan)
.model DSLIM D(Ron=100 Roff=1k Vfwd=1.5 Vrev=.1 epsilon=.1 revepsilon=.1 noiseless)
.model DLIM2 D(Ron=1k Roff=70Meg Vfwd=2.1 epsilon=.1 Vrev=1.9 revepsilon=.1 noiseless)
.model DLIMN1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m epsilon=.1 revepsilon=10m  noiseless)
.model DLIMN2 D(Ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.model DLIMP1 D(Ron=1k Roff=100Meg Vfwd=.75 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.model DLIMP2 D(ron=30Meg Vfwd=.3 epsilon=.2 noiseless)
.ends LT6234
*
.subckt LT6550 1 2 3 4 5
B2 N002 0 I=10u*dnlim(uplim(V(VINM),V(3)+.21,.1), V(4)-.21, .1)+1n*V(VINM)
C10 N002 0 1f Rpar=100K noiseless
M1 5 N010 4 4 NI temp=27
C2 3 5 1p Rpar=100Meg noiseless
D5 N010 4 DLIMN
M2 5 N004 3 3 PI temp=27
D8 3 N004 DLIMP
A3 N005 N006 4 4 4 4 N004 4 OTA g=200n ref=-50m linear vlow=-1e308 vhigh=1e308
C11 5 4 1p Rpar=100Meg noiseless
A4 0 N002 0 0 0 0 X1 0 OTA g=1m linear en=12n Vhigh=10 Vlow=-10
A5 N003 0 N005 N005 N005 N005 N006 N005 OTA g=68u iout=51u Vhigh=1e308 Vlow=-1e308
G1 4 N010 N006 N005 200n
D9 N006 N005 DLIM
C7 3 1 1p Rser=1k Rpar=700k noiseless
C13 3 4 1000p
C1 X1 0 300f Rpar=1k noiseless
G2 0 N005 4 0 .5m
G4 0 N005 3 0 .5m
C18 N005 0 200p Rpar=1K noiseless
D10 1 3 DESD
D11 4 1 DESD
A1 VINM 1 0 0 0 0 0 0 OTA g=0 in=8p
C8 N004 5 .1f Rser=40Meg noiseless
C9 5 N010 .1f Rser=40Meg noiseless
C4 3 VINM 1p Rser=1k Rpar=5T noiseless
C5 1 4 1p Rser=1k Rpar=1Meg noiseless
C6 VINM 4 1p Rser=1k Rpar=5T noiseless
D3 3 4 DPOW
C3 3 N004 20f Rser=15Meg noiseless
C12 N010 4 20f Rser=15Meg noiseless
C14 N006 5 100f
B1 0 N002 I=10u*dnlim(uplim(V(1),V(3)-1.65,.1), V(4)-.2, .1)+1n*V(1)-52.54p
R1 5 VINM 450 noiseless
R2 VINM 2 450 noiseless
G3 0 N003 X1 0 1m
C15 N003 0 100f Rpar=1k noiseless
D1 VINM 1 DIN
S2 1 3 N005 1 SBIAS
.model SBIAS SW(level=2 Ron=3k Roff=1Meg vt=.2 vh=-.2 ilimit=13u  noiseless)
.model DPOW D(Ron=100 Roff=1G Vfwd=.6 epsilon=.1 ilimit=7.28m noiseless)
.model DIN D(Ron=400 Roff=1G Vfwd=1.4 epsilon=.1 noiseless)
.model NI VDMOS(Vto=300m kp=60m lambda=.01)
.model PI VDMOS(Vto=-300m Kp=60m lambda=.01 pchan)
.model DLIM D(Ron=1k Roff=70Meg Vfwd=4 Vrev=4 epsilon=10m revepsilon=10m noiseless)
.model DESD D(Ron=10 Roff=10T Vfwd=.7 epsilon=.1 noiseless)
.model DLIMN D(Ron=100k Roff=100Meg Vfwd=1.6 Vrev=-300m epsilon=.1  noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.6 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.ends LT6550
*
.subckt LT6551 1 2 3 4
B2 N002 0 I=10u*dnlim(uplim(V(VINM),V(3)+.21,.1), V(2)-.21, .1)+1n*V(VINM)
C10 N002 0 1f Rpar=100K noiseless
M1 4 N009 2 2 NI temp=27
C2 3 4 1p Rpar=100Meg noiseless
D5 N009 2 DLIMN
M2 4 N004 3 3 PI temp=27
D8 3 N004 DLIMP
A3 N005 N006 2 2 2 2 N004 2 OTA g=200n ref=-50m linear vlow=-1e308 vhigh=1e308
C11 4 2 1p Rpar=100Meg noiseless
A4 0 N002 0 0 0 0 X1 0 OTA g=1m linear en=12n Vhigh=10 Vlow=-10
A5 N003 0 N005 N005 N005 N005 N006 N005 OTA g=68u iout=51u Vhigh=1e308 Vlow=-1e308
G1 2 N009 N006 N005 200n
D9 N006 N005 DLIM
C7 3 1 1p Rser=1k Rpar=700k noiseless
C13 3 2 1000p
C1 X1 0 300f Rpar=1k noiseless
G2 0 N005 2 0 .5m
G4 0 N005 3 0 .5m
C18 N005 0 200p Rpar=1K noiseless
D10 1 3 DESD
D11 2 1 DESD
A1 VINM 1 0 0 0 0 0 0 OTA g=0 in=8p
C8 N004 4 .1f Rser=40Meg noiseless
C9 4 N009 .1f Rser=40Meg noiseless
C4 3 VINM 1p Rser=1k Rpar=5T noiseless
C5 1 2 1p Rser=1k Rpar=1Meg noiseless
C6 VINM 2 1p Rser=1k Rpar=5T noiseless
D3 3 2 DPOW
C3 3 N004 20f Rser=15Meg noiseless
C12 N009 2 20f Rser=15Meg noiseless
C14 N006 4 100f
B1 0 N002 I=10u*dnlim(uplim(V(1),V(3)-1.65,.1), V(2)-.2, .1)+1n*V(1)-52.54p
R1 4 VINM 450 noiseless
R2 VINM 2 450 noiseless
G3 0 N003 X1 0 1m
C15 N003 0 100f Rpar=1k noiseless
D1 VINM 1 DIN
S2 1 3 N005 1 SBIAS
.model SBIAS SW(level=2 Ron=3k Roff=1Meg vt=.2 vh=-.2 ilimit=13u  noiseless)
.model DPOW D(Ron=100 Roff=1G Vfwd=.6 epsilon=.1 ilimit=7.28m noiseless)
.model DIN D(Ron=400 Roff=1G Vfwd=1.4 epsilon=.1 noiseless)
.model NI VDMOS(Vto=300m kp=60m lambda=.01)
.model PI VDMOS(Vto=-300m Kp=60m lambda=.01 pchan)
.model DLIM D(Ron=1k Roff=70Meg Vfwd=4 Vrev=4 epsilon=10m revepsilon=10m noiseless)
.model DESD D(Ron=10 Roff=10T Vfwd=.7 epsilon=.1 noiseless)
.model DLIMN D(Ron=100k Roff=100Meg Vfwd=1.6 Vrev=-300m epsilon=.1  noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.6 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.ends LT6551
*
.subckt LTC2052 1 2 3 4 5
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.9,.1), V(5)-.4, .1)+1n*V(1)
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.89,.1), V(5)-.41, .1)+1n*V(2)
C9 4 2 .85p Rpar=1T noiseless
C10 N004 0 1f Rpar=100K noiseless
M1 4 N005 3 3 N temp=27
M2 5 N005 3 3 P temp=27
D5 N005 3 Y
D6 3 N005 Y
R2 4 N005 2G noiseless
R3 N005 5 2G noiseless
C14 0 N006 15p Rpar=6k noiseless
G1 N005 0 N005 4 500m dir=1 vto=.3
G2 0 N005 5 N005 500m dir=1 vto=.45
G3 0 N006 0 N007 167µ
C2 4 3 1p Rpar=1G noiseless
C15 3 5 1p Rpar=1G noiseless
A2 0 N004 0 0 0 0 N007 0 OTA g=3.2m linear en=79n Rout=1k Cout=40p Vlow=-1e308 Vhigh=1e308
C3 N005 0 500p Rser=100 noiseless
C1 2 5 .85p Rpar=1T noiseless
C4 4 1 .85p Rpar=1T noiseless
C6 1 5 .85p Rpar=1T noiseless
R4 4 5 3.3Meg noiseless
D1 4 5 DPOW
A1 N006 0 0 0 0 0 N005 0 OTA g=3.2m iout=1m Vlow=-1e308 Vhigh=1e308
.model Y D(Ron=100 Roff=1T Vfwd=.6 epsilon=.1 noiseless)
.model N VDMOS(Vto=-100m Kp=90m)
.model P VDMOS(Vto=100m Kp=70m pchan)
.model shutD   SW(Ron=1T  Roff=10k vt=.5 vh=-.1)
.model DS D(Ron=100 Roff=1G Vfwd=.2 Vrev=.2 epsilon=0.1 revepsilon=0.1 noiseless)
.model SPOW SW(level=2 Ron=500 Roff=1G vt=.5 vh=-.1 ilimit=.5m noiseless)
.model DPOW D(Ron=500 Roff=1G vfwd=.5 epsilon=.1 ilimit=.450m noiseless)
.ends LTC2052
*
.subckt LTC2054 1 2 3 4 5
M1 4 X3 N005 N005 N temp=27
M2 5 X3 N009 N009 P temp=27
C1 X3 0 20f Rpar=1Meg noiseless
C3 4 3 .5p
C4 3 5 .5p
B1 0 N006 I=10u*dnlim(uplim(V(1),V(4)-.4,.1), V(5)-0.3, .1)+1n*V(1)
B2 N006 0 I=10u*dnlim(uplim(V(2),V(4)-.39,.1), V(5)-0.31, .1)+1n*V(2)
C9 4 2 1p Rser=100 noiseless
C10 N006 0 1f Rpar=100K noiseless
D1 X3 3 YU
D6 3 X3 YD
D7 4 5 DP
G3 N004 0 N004 4 600m dir=1 vto=0.2
G6 0 N004 5 N004 600m dir=1 vto=0.4
R4 4 N004 1G
R5 N004 5 1G
G2 0 X3 N004 0 1µ
C2 4 1 1p Rser=100 noiseless
C6 2 5 1p Rser=100 noiseless
C7 1 5 1p Rser=100 noiseless
R3 4 5 111k noiseless
R1 3 N009 1k
R2 N005 3 1k
S1 3 N005 4 5 SUL
S2 N009 3 4 5 SDL
C11 4 N005 100f
C13 N009 5 100f
A3 0 N007 0 0 0 0 N004 0 OTA g=2.05m iout=3.1m Cout=6n Vlow=-1e308 Vhigh=1e308
A1 0 N006 0 0 0 0 N007 0 OTA g=20u linear Vlow=-5 Vhigh=5 Rout=500k Cout=200f en= 1n + 128n/ (1.1+ (min(freq,1.5k)/800)**1.8 + (max(1.8k,freq)/3k)**1.8)
D2 5 2 DESD
D3 2 4 DESD
D4 5 1 DESD
D5 1 4 DESD
.model YU D(Ron=10k Roff=1T Vfwd=1 epsilon=.2 noiseless)
.model YD D(Ron=2k Roff=1T Vfwd=.98 epsilon=.2 noiseless)
.model N VDMOS(Vto=-10m Kp=12m)
.model P VDMOS(Vto=10m Kp=10m pchan)
.model DP D(Roff=1T Ron=1k Vfwd=0.5 ilimit=84.4u noiseless)
.model SUL SW(Ron=1 Roff=80 vt=4 vh=-1)
.model SDL SW(Ron=1 Roff=400 vt=7.5 vh=-5)
.model DESD D(Ron=100 Roff=1T vfwd=600m epsilon=600m)
.ends LTC2054
*
.subckt LT1678 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=276f ink=178
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)+.2,.1), V(5)-.2, .1)+1n*V(1)-17.2p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)+.21,.1), V(5)-.21, .1)+1n*V(2)
C9 4 2 2.1p Rpar=4G noiseless
C10 N004 0 2f Rpar=100K noiseless
D4 N009 5 DBIA2
M1 3 N010 5 5 NI temp=27
C2 4 3 1p Rpar=1g noiseless
D5 N010 5 DLIMN1
M2 3 VP 4 4 PI temp=27
D8 4 VP DLIMP
C3 4 VP 40p Rser=180k noiseless
A3 N006 N008 5 5 5 5 VP 5 OTA g=800n ref=-.02 linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=1g noiseless
C12 N010 5 10f Rser=250k noiseless
D10 N009 1 DBIA1
D6 N010 5 DLIMN2
A4 0 N004 0 0 0 0 N005 0 OTA g=10u linear en=3.9n enk=28 Vhigh=1e308 Vlow=-1e308
C16 N008 3 7p Rser=100 noiseless
A5 N007 0 N006 N006 N006 N006 N008 N006 OTA g=1m iout=42.6u Vhigh=1e308 Vlow=-1e308
D12 1 4 DBIAOT
D13 2 4 DBIAOT
G1 5 N010 N008 N006 30n
C5 4 N009 20p Rpar=1Meg noiseless
C14 VP 3 10f
B3 VP 5 I=25n*V(VP,3)/dnlim(V(4,5),2,.1)
C7 4 1 2.1p Rpar=4G noiseless
C13 4 5 1000p
C15 VP N010 100f Rser=100k noiseless
D7 4 5 DP
D15 1 2 DINP
C6 1 5 2.1p Rpar=4G noiseless
C8 2 5 2.1p Rpar=4G noiseless
S2 0 N005 3 4 LIMU
S3 N005 0 5 3 LIMD
D1 N008 N006 DLIM
D9 N009 2 DBIA1
C1 N007 0 274p Rpar=1k Rser=290.3 noiseless
G2 0 N007 N005 0 1m
L1 N005 0 4.03m Cpar=3.93f Rser=127k Rpar=470.4k noiseless
S1 5 N010 5 3 LIMD2
G3 0 N006 5 0 5m
G4 0 N006 4 0 5m
C4 N006 0 20p Rpar=100
.model DP D(Roff=1T Ron=1k Vfwd=0.5 ilimit=840u noiseless)
.model DBIA1 D(Ron=1k Roff=100G  Vfwd=.1 ilimit=390n epsilon=.1 noiseless)
.model DBIA2 D(Ron=1k Roff=10G Vfwd=1.3 epsilon=.1 noiseless)
.model DBIAOT D(Ron=10k Vfwd=-.7 ilimit=193n epsilon=50m noiseless)
.model DINP D(Ron=100 Roff=10G Vfwd=1.4 Vrev=1.4 epsilon=100m revepsilon=100m noiseless)
.model LIMU SW(level=2 Ron=1 Roff=2Meg vt=-100m vh=-10m oneway noiseless)
.model LIMD SW(level=2 Ron=1 Roff=2Meg vt=-60m vh=-10m oneway noiseless)
.model LIMD2 SW(level=2 Ron=1Meg Roff=1T vt=-60m vh=-10m oneway)
.model NI VDMOS(Vto=300m kp=30m lambda=.01 rs=5 is=0)
.model DLIMN1 D(Ron=100k Roff=3g Vfwd=1.6 Vrev=-330m epsilon=.1 noiseless)
.model DLIMN2 D(Ron=500k Roff=1G Vfwd=1 epsilon=1.2 ilimit=70n noiseless)
.model PI VDMOS(Vto=-300m Kp=30m lambda=.01 pchan is=0 rs=2)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=2.2 Vrev=-.3 epsilon=10m revepsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=7Meg Vfwd=2.3 Vrev=5 epsilon=10m revepsilon=10m noiseless)
.ends LT1678
*
.subckt LT6013 1 2 3 4 5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=147f ink=45.5
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-1.1,.1), V(5)+.9, .1)+1n*V(1)-89p
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-1.09,.1), V(5)+.89, .1)+1n*V(2)
C10 N004 0 400f Rpar=100K noiseless
M1 3 N010 5 5 NI temp=27
C2 4 3 1p Rpar=860k noiseless
D5 N010 5 DLIMN
M2 3 N006 4 4 PI temp=27
D8 4 N006 DLIMP
C3 4 N006 500f Rser=1.5Meg noiseless
A3 N007 N008 5 5 5 5 N006 5 OTA g=200n ref=-37m linear vlow=-1e308 vhigh=1e308
C11 3 5 1p Rpar=860k noiseless
C12 N010 5 10f Rser=250k noiseless
A4 0 N004 0 0 0 0 N005 0 OTA g=1u linear en=9.5n enk=2.6 Vhigh=1e308 Vlow=-1e308
C16 N008 3 3p
A5 N005 0 N007 N007 N007 N007 N008 N007 OTA g=30u iout=601n Vhigh=1e308 Vlow=-1e308
G1 5 N010 N008 N007 200n
D9 N008 N007 DLIM
C14 N006 3 4f
C7 4 1 2p Rser=2k Rpar=240G noiseless
C13 4 5 1000p Rpar=896k noiseless
C15 N006 N010 50f Rser=1Meg noiseless
C1 N005 0 260f Rpar=1Meg noiseless
G2 0 N007 5 0 .5m
G4 0 N007 4 0 .5m
C18 N007 0 200p Rpar=1K noiseless
D1 2 1 DIN
C4 4 2 2p Rser=2k Rpar=240G noiseless
C5 1 5 2p Rser=2k Rpar=240G noiseless
C6 2 5 2p Rser=2k Rpar=240G noiseless
D2 4 5 DPOW
D3 2 5 DBIAS
D4 1 5 DBIAS
.model DIN D(Ron=1k Roff=20Meg Vfwd=1.5 epsilon=.1 Vrev=1.5 revepsilon=.1 noiseless)
.model DBIAS D(Ron=50Meg Roff=100G Vfwd=.6 epsilon=.1 ilimit=99p noiseless)
.model DPOW D(Ron=1k Vfwd=.5 epsilon=.1 ilimit=60.7u noiseless)
.model NI VDMOS(Vto=300m kp=30m lambda=.01)
.model PI VDMOS(Vto=-300m Kp=30m lambda=.01 pchan is=0)
.model DLIM D(Ron=100k Roff=70Meg Vfwd=200m Vrev=200m epsilon=10m revepsilon=10m noiseless)
.model DLIMN D(Ron=100k Roff=100Meg Vfwd=1.3 Vrev=-300m epsilon=.1  noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.25 Vrev=-300m  epsilon=10m revepsilon=10m noiseless)
.ends LT6013
*
.subckt LT6016 1 2 3 4 5
B1 0 N006 I=10u*dnlim(uplim(V(1),V(4)+76.1,.1), V(4)-.15, .1)+1n*V(1)-10.72254n
B2 N006 0 I=10u*dnlim(uplim(V(2),V(4)+76.1,.1), V(4)-.16, .1)+1n*V(2)
C10 N006 0 50f Rpar=100K noiseless
M1 N016 NG 4 4 NI temp=27
C2 3 5 1p Rpar=1g noiseless
D5 NG 4 DLIMN1
M2 5 N007 N004 N004 PI temp=27
A3 N013 N015 4 4 4 4 N007 4 OTA g=2u ref=-.305 linear vlow=-1e308 vhigh=1e308
C11 5 4 1p Rpar=1g noiseless
D6 NG 4 DLIMN2
C16 N015 5 1.8p
A5 N011 0 N013 N013 N013 N013 N015 N013 OTA g=25u asym isource=1.8u isink=-2.8u Vlow=-1e308 Vhigh=1e308
G1 4 NG N015 N013 140n
D9 N015 N013 DLIM
C7 3 1 2.5p Rser=1k Rpar=100G noiseless
C13 3 4 10p
C1 N009 0 25f
G2 0 N013 4 0 .5m
G4 0 N013 3 0 .5m
C18 N013 0 200p Rpar=1K noiseless
C4 3 2 2.5p Rser=1k Rpar=100G noiseless
C6 1 4 2.5p Rser=1k Rpar=100G noiseless
C8 2 4 2.5p Rser=1k Rpar=100G noiseless
D3 3 N004 DSBD
C5 3 N004 100f Rpar=10Meg noiseless
D4 N004 N007 DLIMP
D2 N009 0 DLIM0
D1 4 5 DESD
D8 4 1 DESD
D10 4 2 DESD
A2 N014 0 0 0 0 0 0 0 OTA g=0 in=11.4p ink=15
D11 5 N016 DNR
C15 N016 4 100f Rpar=10Meg noiseless
D7 N007 3 DLIMPR
D12 3 4 DP
A6 4 3 0 0 0 0 N005 0 OTA g=2u iout=1u ref=-2.5 Rout=1Meg Cout=100f vlow=-1e308 vhigh=1e308
S4 N012 4 N005 0 SBiasN
D13 3 N012 DBiasDrop
C14 N012 4 100f
S2 N004 N007 0 N005 SHUT
S3 NG 4 0 N005 SHUT
D16 2 1 D1Meg
C17 N010 0 54.26f noiseless Rser=2.667Meg Rpar=1Meg
G3 0 N010 N009 0 1µ
D17 0 N009 DNLIN
C19 N011 0 25f noiseless Rpar=1Meg
G5 0 N011 N010 0 1µ
S5 N013 N015 4 5 SGK
C3 3 N007 .9p Rser=700k noiseless
C12 NG 4 .9p Rser=700k noiseless
D14 2 N012 DBiasOTT
D15 1 N012 DBiasOTT
S1 0 N008 3 2 SNOI
A7 N008 0 0 0 0 0 0 0 OTA g=0 in=17.25p ink=5
A1 2 1 0 0 0 0 0 0 OTA g=0 in=100f ink=255
GNOI_I 1 2 N014 0 1µ
S6 0 N014 3 2 SNOI
A4 0 N006 0 0 0 0 N009 0 OTA g=1u linear en=18n enk=3 Vhigh=1e308 Vlow=-1e308
GNOI_V N006 0 N008 0 10n
.model DP D(Ron=1k Roff=1G Vfwd=2.5 epsilon=100m ilimit=32u noiseless)
.model DESD D(Ron=1k Roff=1G vfwd=700m epsilon=100m noiseless)
.model SNOI SW(Ron=1 Roff=1Meg vt=1.2 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=60m Mtriode=.9 lambda=.01)
.model PI VDMOS(Vto=-300m Kp=120m lambda=.01 pchan is=0)
.model DLIM0 D(Ron=10 Roff=10Meg Vfwd=1 epsilon=100m Vrev=1 epsilon=100m noiseless)
.model DNLIN D(Roff=1.8Meg Ron=800k vfwd=0 epsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=8Meg Vfwd=500m Vrev=100m epsilon=10m revepsilon=10m noiseless)
.model SHUT SW(level=2 Ron=10k Roff=100G vt=-.5 vh=-.2 noiseless)
.model DSBD D( Ron=100 Roff=100Meg  Vfwd=420m epsilon=50m  Vrev=100 revepsilon=10m noiseless)
.model DNR D(Ron=10 Roff=1G Vfwd=1m epsilon=300m noiseless)
.model DLIMN1 D(Ron=200k Roff=415Meg Vfwd=1.2 Vrev=-330m epsilon=.1  noiseless)
.model DLIMN2 D(Ron=5Meg Roff=1G Vfwd=-20m epsilon=50m ilimit=44n noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1 epsilon=10m noiseless)
.model DLIMPR D(Ron=5Meg Roff=1G Vfwd=100m epsilon=10m noiseless)
.model SGK SW(level=2 Ron=65k Roff=100G  vt=-260m vh=150m oneway epsilon=10m noiseless)
.model SBiasN SW(level=2 Ron=10k Roff=1g vt=.5 vh=-.2 ilimit=28u noiseless)
.model DBiasDrop D(Ron=1k Roff=1G vfwd=1.6 epsilon=500m noiseless)
.model DBiasOTT D(Ron=500 Roff=1G vfwd=700m epsilon=200m noiseless)
.model D1Meg D(Ron=1Meg Roff=1Meg vfwd=0 vrev=0 ilimit=10n revilimit=10n noiseless)
.ends LT6016
*
.subckt LTC6268 1 2 3 4 5 6
A1 2 REF 0 0 0 0 0 0 OTA g=0 in=1p*uplim((freq/20Meg)**.9,3,.2)*dnlim((freq/60Meg)**1.5,1,.2)
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.4,.1), V(5)-.2, .1)+1n*V(1)-7.501009n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.39,.1), V(5)-.21, .1)+1n*V(2)
C10 N004 0 .1f Rpar=100K noiseless
M1 3 N010 5 5 NI temp=27
C2 4 3 10f
M2 3 N005 4 4 PI temp=27
C3 4 N005 10f Rser=5Meg noiseless
C11 3 5 10f
C12 N010 5 10f Rser=5Meg noiseless
D6 N010 5 DLIMN
A4 0 N004 0 0 0 0 N006 0 OTA g=1m linear en=4n*dnlim((120k/freq)**.342,1,.1)*dnlim((2Meg/freq)**.1,1,.1)*dnlim((freq/40Meg)**.35,1,.1) Vhigh=1e308 Vlow=-1e308
C16 N008 3 .9p
G1 5 N010 N008 REF 100n
C7 4 1 225f
C17 0 N006 120f Rpar=1k noiseless
G4 0 N007 N006 0 1m
D14 4 N005 DLIMP
C4 2 1 100f
A6 N007 0 N009 REF REF REF N008 REF OTA g=2.5m asym isource=256u isink=-410u Rout=40k Vlow=-1e308 Vhigh=1e308
D9 4 6 DSHUT
A5 REF N008 N013 REF REF REF N005 REF OTA g=100n ref=-150m linear Vlow=-1e308 Vhigh=1e308
C14 4 5 20p Rpar=12.8k noiseless
S4 4 5 N013 REF SWP
C13 4 5 10p
A3 6 5 REF REF REF REF N013 REF SCHMITT vt=1.2 vh=.2 trise=900n tfall=800n
G2 0 REF 4 0 50m
G3 0 REF 5 0 50m
C19 REF 0 100p Rpar=10 noiseless
GESD1 2 4 2 4 1 vto=600m dir=1
GESD2 5 2 5 2 1 vto=600m dir=1
GESD3 1 4 1 4 1 vto=600m dir=1
GESD4 5 1 5 1 1 vto=600m dir=1
D1 3 4 DESD
D2 5 3 DESD
C1 4 2 225f
C5 1 5 225f
C6 2 5 225f
C8 0 N007 120f Rpar=1k noiseless
A2 1 REF 0 0 0 0 0 0 OTA g=0 in=1p*uplim((freq/20Meg)**.9,3,.2)*dnlim((freq/60Meg)**1.5,1,.2)
A7 N013 REF REF REF REF REF N009 REF BUF trise=100n
.model NI VDMOS(Vto=300m kp=100m lambda=.01)
.model PI VDMOS(Vto=-300m kp=100m lambda=.01 pchan is=0)
.model DSHUT D(Ron=1k Roff=1g Vfwd=.6 epsilon=100m ilimit=2u noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.4 Vrev=340m epsilon=200m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=100Meg Vfwd=800m Vrev=340m epsilon=200m revepsilon=100m  noiseless)
.model SWP SW(Roff=1G Ron=500 vt=.5 vh=-.1 ilimit=5.6m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.ends LTC6268
*
.subckt LTC6268-10 1 2 3 4 5 6
A1 2 REF 0 0 0 0 0 0 OTA g=0 in=1p*uplim(freq/14.3Meg,12,.5)
B1 0 N004 I=10u*dnlim(uplim(V(1),V(4)-.4,.1), V(5)-.2, .1)+1n*V(1)-7.501009n
B2 N004 0 I=10u*dnlim(uplim(V(2),V(4)-.39,.1), V(5)-.21, .1)+1n*V(2)
C10 N004 0 .1f Rpar=100K noiseless
M1 3 N010 5 5 NI temp=27
C2 4 3 10f
M2 3 N005 4 4 PI temp=27
C3 4 N005 10f Rser=5Meg noiseless
C11 3 5 10f
C12 N010 5 10f Rser=5Meg noiseless
D6 N010 5 DLIMN
A4 0 N004 0 0 0 0 N006 0 OTA g=1m linear en=4n*dnlim((50k/freq)**.31,1,.1)*dnlim((900k/freq)**.15,1,.1)*dnlim((freq/80Meg)**.22,1,.1) Vhigh=1e308 Vlow=-1e308
C16 N008 3 80f
G1 5 N010 N008 REF 100n
C7 4 1 225f
C17 0 N006 120f Rpar=1k noiseless
G4 0 N007 N006 0 1m
D14 4 N005 DLIMP
C4 2 1 100f
A6 N007 0 N009 REF REF REF N008 REF OTA g=2.5m asym isource=85.7u isink=-127.4u Rout=40k Vlow=-1e308 Vhigh=1e308
D9 4 6 DSHUT
A5 REF N008 N013 REF REF REF N005 REF OTA g=100n ref=-150m linear Vlow=-1e308 Vhigh=1e308
C14 4 5 20p Rpar=12.8k noiseless
S4 4 5 N013 REF SWP
C13 4 5 10p
A3 6 5 REF REF REF REF N013 REF SCHMITT vt=1.2 vh=.2 trise=900n tfall=800n
G2 0 REF 4 0 50m
G3 0 REF 5 0 50m
C19 REF 0 100p Rpar=10 noiseless
GESD1 2 4 2 4 1 vto=600m dir=1
GESD2 5 2 5 2 1 vto=600m dir=1
GESD3 1 4 1 4 1 vto=600m dir=1
GESD4 5 1 5 1 1 vto=600m dir=1
D1 3 4 DESD
D2 5 3 DESD
C1 4 2 225f
C5 1 5 225f
C6 2 5 225f
C8 0 N007 120f Rpar=1k noiseless
A2 1 REF 0 0 0 0 0 0 OTA g=0 in=1p*uplim(freq/14.3Meg,12,.5)
A7 N013 REF REF REF REF REF N009 REF BUF trise=100n
.model NI VDMOS(Vto=300m kp=100m lambda=.01)
.model PI VDMOS(Vto=-300m kp=100m lambda=.01 pchan is=0)
.model DSHUT D(Ron=1k Roff=1g Vfwd=.6 epsilon=100m ilimit=2u noiseless)
.model DIN D(Ron=300 Roff=100g Vfwd=.8 Vrev=.8 epsilon=100m revepsilon=100m noiseless)
.model DLIMP D(Ron=100k Roff=100Meg Vfwd=1.4 Vrev=340m epsilon=200m revepsilon=100m noiseless)
.model DLIMN D(Ron=1Meg Roff=100Meg Vfwd=800m Vrev=340m epsilon=200m revepsilon=100m  noiseless)
.model SWP SW(Roff=1G Ron=500 vt=.5 vh=-.1 ilimit=5.6m noiseless)
.model DESD D(Ron=100 Roff=100T Vfwd=1 epsilon=50m noiseless)
.ends LTC6268-10
*
.subckt LTC6363 1 2 3 4 5 6 7 8
A5 N010 0 0 0 0 0 N011 0 OTA g=20m iout=412u cout=1f Vhigh=1e308 Vlow=-1e308
D9 N011 0 DLIM
C7 3 8 .1p Rser=1k Rpar=1G noiseless
C13 3 6 10p
S1 N011 0 0 _SHDN SHUT
C17 6 7 500f
A2 7 Mid 0 0 0 0 _SHDN 0 SCHMITT trise=4u tfall=2u vt=.8 vh=.4
D6 1 3 DESD
D7 6 1 DESD
D10 8 3 DESD
D11 6 8 DESD
A1 0 8 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
A7 0 N010 0 0 0 0 N028 0 OTA g=20m iout=412u cout=1f Vhigh=1e308 Vlow=-1e308
D13 N028 0 DLIM
S3 N028 0 0 _SHDN SHUT
A8 0 N027 0 0 0 0 N015 0 OTA g=10m linear en=14.3n enk=1.1k Rout=1k Cout=20p ref=0 Vlow=-1e308 Vhigh=1e308
R5 3 2 3.6Meg noiseless
R6 2 6 3.6Meg noiseless
G6 0 N028 0 N015 250µ
G7 0 N011 0 N015 250µ
D14 N015 0 DCML
C1 1 8 2p Rser=500 Rpar=40k noiseless
C2 3 4 1p Rpar=100Meg noiseless
C8 4 6 1p Rpar=100Meg noiseless
C9 3 5 1p Rpar=100Meg noiseless
C11 5 6 1p Rpar=100Meg noiseless
R10 3 7 10Meg noiseless
S7 6 3 _SHDN 0 SPOWR1
A10 0 1 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D1 2 3 DESD
D4 6 2 DESD
D17 7 3 DESD
D18 6 7 DESD
B1 0 N006 I=10u*dnlim(uplim(V(8),V(3)-1.3,.1), V(6)-.3, .1)+1n*V(8)
B2 N006 0 I=10u*dnlim(uplim(V(1),V(3)-1.29,.1), V(6)-.31, .1)+1n*V(1)
C20 N006 0 1f Rpar=100K noiseless
C4 3 1 .1p Rser=1k Rpar=1G noiseless
C5 8 6 .1p Rser=1k Rpar=1G noiseless
C6 1 6 .1p Rser=1k Rpar=1G noiseless
B3 0 N027 I=10u*dnlim(uplim(V(2),V(3)-.4,.1), V(6)+.42, .1)
B4 N027 0 I=5u*(V(4)+V(5))
C30 N027 0 .1f Rpar=100K noiseless
B7 3 1 I=(272n+25n*V(1,6))*(.5+.5*tanh((V(3,1)-500m)/200m))+ 25n/dnlim(V(1,6)+.06,.02,.01)
B8 3 8 I=(272n+25n*V(8,6))*(.5+.5*tanh((V(3,8)-500m)/200m))+ 25n/dnlim(V(8,6)+.06,.02,.01)
D21 3 7 DSPU
R4 3 Mid 10Meg noiseless
D22 3 6 DPOW
S8 6 3 _SHDN 0 SPOWR2
A9 0 N007 0 0 0 0 N008 0 OTA g=1m linear Rout=1k Cout=3.25p vlow=-1e308 vhigh=1e308
R9 Mid 6 10Meg noiseless
L1 N010 0 242µ Rser=10.68k Rpar=157.1k noiseless
G1 0 N010 N009 0 100µ
M1 N012 N005 3 3 PI temp=27
M2 N019 N018 6 6 NI temp=27
D2 3 N005 DLIMP
D3 N018 6 DLIMN
B5 6 N018 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXP)+100m),300m/1e6,100n)
B6 N005 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXP)-100m),300m/1e6,100n)
D5 3 N024 DLIMP
D8 N030 6 DLIMN
A3 0 N006 0 0 0 0 N007 0 OTA g=1m linear en=2.9n enk=4k Rout=1k Cout=300p Vlow=-60m Vhigh=60m epsilon=20m
G10 0 XXP N011 0 1µ
L3 XXP 0 134m Rser=1.095Meg Rpar=11.538Meg noiseless
G11 0 XXN N028 0 1µ
C3 3 N005 .1f Rser=10Meg noiseless
C10 N018 6 .1f Rser=10Meg noiseless
C12 3 N024 .1f Rser=10Meg noiseless
C15 N030 6 .1f Rser=10Meg noiseless
C24 N011 N016 9p
C16 N023 N028 9p
G3 0 N009 N008 0 10µ
L2 N009 0 397.8µ Rser=100k noiseless
G12 0 N016 4 Mid 100m
C14 N016 0 1p Rpar=10 noiseless
G13 0 N023 5 Mid 100m
C19 N023 0 1p Rpar=10 noiseless
R13 N012 4 3.333 noiseless
I1 4 N012 36m
R14 4 N019 3 noiseless
I2 N019 4 33m
M3 N026 N024 3 3 PI temp=27
M4 N031 N030 6 6 NI temp=27
R15 N026 5 3.333 noiseless
I3 5 N026 36m
R16 5 N031 3 noiseless
I4 N031 5 33m
L4 XXN 0 134m Rser=1.095Meg Rpar=11.538Meg noiseless
B12 N024 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXN)-100m),300m/1e6,100n)
B9 6 N030 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXN)+100m),300m/1e6,100n)
R17 4 5 2Meg noiseless
.model DPOW D(Ron=190k Roff=1G Vfwd=1 epsilon=1 noiseless)
.model SPOWR1 SW(level=2 Ron=200 Roff=1g vt=.5 vh=-.1 ilimit=1.13m noiseless)
.model SPOWR2 SW(Ron=49k Roff=1G vt=.5 vh=-.1 noiseless)
.model DSPU D(Ron=100k Roff=1g Vfwd=100m epsilon=100m ilimit=10u noiseless)
.model DCML D(Ron=10 Roff=1k Vfwd=500m epsilon=10m Vrev=500m revepsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=24.8Meg Vfwd=3 Vrev=3 epsilon=100m revepsilon=100m noiseless)
.model DESD D(Ron=100 Roff=1G Vfwd=.7 epsilon=.1 noiseless)
.model SHUT SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=50m ksubthres=100m Mtriode=2 lambda=.0001 noiseless)
.model PI VDMOS(Vto=-300m Kp=50m ksubthres=100m Mtriode=2.2 lambda=.0001 pchan noiseless)
.model DLIMN D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m  noiseless)
.model DLIMP D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m noiseless)
.ends LTC6363
*
.subckt LTC6363-.5 1 2 3 4 5 6 7 8
D9 N009 0 DLIM
C7 3 INP .1p Rser=1k Rpar=1G noiseless
C13 3 6 10p
S1 N009 0 0 _SHDN SHUT
C17 6 7 500f
A2 7 Mid 0 0 0 0 _SHDN 0 SCHMITT trise=4u tfall=2u vt=.8 vh=.4
D6 INN 3 DESD
D7 6 INN DESD
D10 INP 3 DESD
D11 6 INP DESD
A1 0 INP 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D13 N025 0 DLIM
S3 N025 0 0 _SHDN SHUT
A8 0 N024 0 0 0 0 N013 0 OTA g=10m linear en=14.3n enk=1.1k Rout=1k Cout=20p ref=0 Vlow=-1e308 Vhigh=1e308
R5 3 2 3.6Meg noiseless
R6 2 6 3.6Meg noiseless
G6 0 N025 0 N013 250µ
G7 0 N009 0 N013 250µ
D14 N013 0 DCML
C1 INN INP 2p Rser=1k Rpar=40k noiseless
R10 3 7 10Meg noiseless
S7 6 3 _SHDN 0 SPOWR1
A10 0 INN 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D1 2 3 DESD
D4 6 2 DESD
D17 7 3 DESD
D18 6 7 DESD
B1 0 N004 I=10u*dnlim(uplim(V(INP),V(3)-1.3,.1), V(6)-.3, .1)+1n*V(INP)
B2 N004 0 I=10u*dnlim(uplim(V(INN),V(3)-1.29,.1), V(6)-.31, .1)+1n*V(INN)
C20 N004 0 1f Rpar=100K noiseless
C4 3 INN .1p Rser=1k Rpar=1G noiseless
C5 INP 6 .1p Rser=1k Rpar=1G noiseless
C6 INN 6 .1p Rser=1k Rpar=1G noiseless
B3 0 N024 I=10u*dnlim(uplim(V(2),V(3)-.4,.1), V(6)+.42, .1)
B4 N024 0 I=5u*(V(4)+V(5))
C30 N024 0 .1f Rpar=100K noiseless
B7 3 INN I=(272n+25n*V(INN,6))*(.5+.5*tanh((V(3,INN)-500m)/200m))+ 25n/dnlim(V(INN,6)+.06,.02,.01)
B8 3 INP I=(272n+25n*V(INP,6))*(.5+.5*tanh((V(3,INP)-500m)/200m))+ 25n/dnlim(V(INP,6)+.06,.02,.01)
D21 3 7 DSPU
R4 3 Mid 10Meg noiseless
D22 3 6 DPOW
S8 6 3 _SHDN 0 SPOWR2
R9 Mid 6 10Meg noiseless
M1 N010 N003 3 3 PI temp=27
M2 N016 N015 6 6 NI temp=27
D2 3 N003 DLIMP
D3 N015 6 DLIMN
B5 6 N015 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXP)+100m),300m/1e6,100n)
B6 N003 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXP)-100m),300m/1e6,100n)
D5 3 N021 DLIMP
D8 N026 6 DLIMN
G10 0 XXP N009 0 1µ
G11 0 XXN N025 0 1µ
C3 3 N003 .1f Rser=10Meg noiseless
C10 N015 6 .1f Rser=10Meg noiseless
C12 3 N021 .1f Rser=10Meg noiseless
C15 N026 6 .1f Rser=10Meg noiseless
G12 0 N014 4 Mid 100m
C14 N014 0 1p Rpar=10 noiseless
G13 0 N020 5 Mid 100m
C19 N020 0 1p Rpar=10 noiseless
R13 N010 4 3.333 noiseless
I1 4 N010 36m
R14 4 N016 3 noiseless
I2 N016 4 33m
M3 N023 N021 3 3 PI temp=27
M4 N027 N026 6 6 NI temp=27
R15 N023 5 3.333 noiseless
I3 5 N023 36m
R16 5 N027 3 noiseless
I4 N027 5 33m
B12 N021 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXN)-100m),300m/1e6,100n)
B9 6 N026 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXN)+100m),300m/1e6,100n)
R17 4 5 2Meg noiseless
R1 INN 1 1.4K
R2 INP 8 1.4K
R3 4 INN 700
R7 5 INP 700
C18 1 6 4p Rser= 10 noiseless
C22 INN 6 6p Rser=10 noiseless
C2 3 4 2p Rpar=100Meg Rser=10 noiseless
G1 0 N007 N005 0 1m
C27 N007 0 800f Rpar=1k noiseless
G2 0 N008 N007 0 1m
C21 6 8 4p Rser= 10 noiseless
C23 6 INP 6p Rser=10 noiseless
C8 4 6 2p Rpar=100Meg Rser=10 noiseless
C9 3 5 4p Rpar=100Meg Rser=10 noiseless
C11 5 6 4p Rpar=100Meg Rser=10 noiseless
A3 0 N004 0 0 0 0 N005 0 OTA g=1m linear en=2.9n enk=4k Rout=1k Cout=2p Vlow=-190m Vhigh=190m epsilon=20m
C25 N008 0 7.96p Rpar=1k Rser=4k noiseless
A4 N008 0 0 0 0 0 N009 0 OTA g=20m iout=4.6m cout=1f Vhigh=1e308 Vlow=-1e308
A5 0 N008 0 0 0 0 N025 0 OTA g=20m iout=4.6m cout=1f Vhigh=1e308 Vlow=-1e308
L1 XXP 0 .707 Rser=1.11Meg Rpar=10Meg
L2 XXN 0 .707 Rser=1.11Meg Rpar=10Meg
C16 N009 N014 130p Rser=15 noiseless
C24 N020 N025 130p Rser=15 noiseless
.model DPOW D(Ron=190k Roff=1G Vfwd=1 epsilon=1 noiseless)
.model SPOWR1 SW(level=2 Ron=200 Roff=1g vt=.5 vh=-.1 ilimit=1.13m noiseless)
.model SPOWR2 SW(Ron=49k Roff=1G vt=.5 vh=-.1 noiseless)
.model DSPU D(Ron=100k Roff=1g Vfwd=100m epsilon=100m ilimit=10u noiseless)
.model DCML D(Ron=10 Roff=1k Vfwd=500m epsilon=10m Vrev=500m revepsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=24.8Meg Vfwd=3 Vrev=3 epsilon=100m revepsilon=100m noiseless)
.model DESD D(Ron=100 Roff=1G Vfwd=.7 epsilon=.1 noiseless)
.model SHUT SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=50m ksubthres=100m Mtriode=2 lambda=.0001 noiseless)
.model PI VDMOS(Vto=-300m Kp=50m ksubthres=100m Mtriode=2.2 lambda=.0001 pchan noiseless)
.model DLIMN D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m  noiseless)
.model DLIMP D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m noiseless)
.ends LTC6363-.5
*
.subckt LTC6363-1 1 2 3 4 5 6 7 8
D9 N009 0 DLIM
C7 3 INP .1p Rser=1k Rpar=1G noiseless
C13 3 6 10p
S1 N009 0 0 _SHDN SHUT
C17 6 7 500f
A2 7 Mid 0 0 0 0 _SHDN 0 SCHMITT trise=4u tfall=2u vt=.8 vh=.4
D6 INN 3 DESD
D7 6 INN DESD
D10 INP 3 DESD
D11 6 INP DESD
A1 0 INP 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D13 N025 0 DLIM
S3 N025 0 0 _SHDN SHUT
A8 0 N024 0 0 0 0 N013 0 OTA g=10m linear en=14.3n enk=1.1k Rout=1k Cout=20p ref=0 Vlow=-1e308 Vhigh=1e308
R5 3 2 3.6Meg noiseless
R6 2 6 3.6Meg noiseless
G6 0 N025 0 N013 250µ
G7 0 N009 0 N013 250µ
D14 N013 0 DCML
C1 INN INP 2p Rser=1k Rpar=40k noiseless
R10 3 7 10Meg noiseless
S7 6 3 _SHDN 0 SPOWR1
A10 0 INN 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D1 2 3 DESD
D4 6 2 DESD
D17 7 3 DESD
D18 6 7 DESD
B1 0 N004 I=10u*dnlim(uplim(V(INP),V(3)-1.3,.1), V(6)-.3, .1)+1n*V(INP)
B2 N004 0 I=10u*dnlim(uplim(V(INN),V(3)-1.29,.1), V(6)-.31, .1)+1n*V(INN)
C20 N004 0 1f Rpar=100K noiseless
C4 3 INN .1p Rser=1k Rpar=1G noiseless
C5 INP 6 .1p Rser=1k Rpar=1G noiseless
C6 INN 6 .1p Rser=1k Rpar=1G noiseless
B3 0 N024 I=10u*dnlim(uplim(V(2),V(3)-.4,.1), V(6)+.42, .1)
B4 N024 0 I=5u*(V(4)+V(5))
C30 N024 0 .1f Rpar=100K noiseless
B7 3 INN I=(272n+25n*V(INN,6))*(.5+.5*tanh((V(3,INN)-500m)/200m))+ 25n/dnlim(V(INN,6)+.06,.02,.01)
B8 3 INP I=(272n+25n*V(INP,6))*(.5+.5*tanh((V(3,INP)-500m)/200m))+ 25n/dnlim(V(INP,6)+.06,.02,.01)
D21 3 7 DSPU
R4 3 Mid 10Meg noiseless
D22 3 6 DPOW
S8 6 3 _SHDN 0 SPOWR2
R9 Mid 6 10Meg noiseless
M1 N010 N003 3 3 PI temp=27
M2 N016 N015 6 6 NI temp=27
D2 3 N003 DLIMP
D3 N015 6 DLIMN
B5 6 N015 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXP)+100m),300m/1e6,100n)
B6 N003 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXP)-100m),300m/1e6,100n)
D5 3 N021 DLIMP
D8 N026 6 DLIMN
G10 0 XXP N009 0 1µ
G11 0 XXN N025 0 1µ
C3 3 N003 .1f Rser=10Meg noiseless
C10 N015 6 .1f Rser=10Meg noiseless
C12 3 N021 .1f Rser=10Meg noiseless
C15 N026 6 .1f Rser=10Meg noiseless
G12 0 N014 4 Mid 100m
C14 N014 0 1p Rpar=10 noiseless
G13 0 N020 5 Mid 100m
C19 N020 0 1p Rpar=10 noiseless
R13 N010 4 3.333 noiseless
I1 4 N010 36m
R14 4 N016 3 noiseless
I2 N016 4 33m
M3 N023 N021 3 3 PI temp=27
M4 N027 N026 6 6 NI temp=27
R15 N023 5 3.333 noiseless
I3 5 N023 36m
R16 5 N027 3 noiseless
I4 N027 5 33m
B12 N021 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXN)-100m),300m/1e6,100n)
B9 6 N026 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXN)+100m),300m/1e6,100n)
R17 4 5 2Meg noiseless
R1 INN 1 1050
R2 INP 8 1050
R3 4 INN 1050
R7 5 INP 1050
C18 1 6 3p Rser= 10 noiseless
C22 INN 6 6p Rser=10 noiseless
C2 3 4 4p Rpar=100Meg Rser=10 noiseless
A3 0 N004 0 0 0 0 N005 0 OTA g=1m linear en=2.9n enk=4k Rout=1k Cout=2p Vlow=-170m Vhigh=170m epsilon=20m
G1 0 N007 N005 0 1m
C27 N007 0 800f Rpar=1k noiseless
C28 N008 0 21.2p Rpar=1k Rser=1.5k noiseless
G2 0 N008 N007 0 1m
A4 N008 0 0 0 0 0 N009 0 OTA g=20m iout=3.1m cout=1f Vhigh=1e308 Vlow=-1e308
A5 0 N008 0 0 0 0 N025 0 OTA g=20m iout=3.1m cout=1f Vhigh=1e308 Vlow=-1e308
L1 XXP 0 .694 Rser=1.09Meg Rpar=12Meg noiseless
L2 XXN 0 .694 Rser=1.09Meg Rpar=12Meg noiseless
C21 6 8 3p Rser= 10 noiseless
C23 6 INP 6p Rser=10 noiseless
C8 4 6 4p Rpar=100Meg Rser=10 noiseless
C9 3 5 4p Rpar=100Meg Rser=10 noiseless
C11 5 6 4p Rpar=100Meg Rser=10 noiseless
C24 N009 N014 100p Rser=15 noiseless
C16 N020 N025 100p Rser=15 noiseless
.model DPOW D(Ron=190k Roff=1G Vfwd=1 epsilon=1 noiseless)
.model SPOWR1 SW(level=2 Ron=200 Roff=1g vt=.5 vh=-.1 ilimit=1.13m noiseless)
.model SPOWR2 SW(Ron=49k Roff=1G vt=.5 vh=-.1 noiseless)
.model DSPU D(Ron=100k Roff=1g Vfwd=100m epsilon=100m ilimit=10u noiseless)
.model DCML D(Ron=10 Roff=1k Vfwd=500m epsilon=10m Vrev=500m revepsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=24.8Meg Vfwd=3 Vrev=3 epsilon=100m revepsilon=100m noiseless)
.model DESD D(Ron=100 Roff=1G Vfwd=.7 epsilon=.1 noiseless)
.model SHUT SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=50m ksubthres=100m Mtriode=2 lambda=.0001 noiseless)
.model PI VDMOS(Vto=-300m Kp=50m ksubthres=100m Mtriode=2.2 lambda=.0001 pchan noiseless)
.model DLIMN D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m  noiseless)
.model DLIMP D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m noiseless)
.ends LTC6363-1
*
.subckt LTC6363-2 1 2 3 4 5 6 7 8
D9 N009 0 DLIM
C7 3 INP .1p Rser=1k Rpar=1G noiseless
C13 3 6 10p
S1 N009 0 0 _SHDN SHUT
C17 6 7 500f
A2 7 Mid 0 0 0 0 _SHDN 0 SCHMITT trise=4u tfall=2u vt=.8 vh=.4
D6 INN 3 DESD
D7 6 INN DESD
D10 INP 3 DESD
D11 6 INP DESD
A1 0 INP 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D13 N025 0 DLIM
S3 N025 0 0 _SHDN SHUT
A8 0 N024 0 0 0 0 N013 0 OTA g=10m linear en=14.3n enk=1.1k Rout=1k Cout=20p ref=0 Vlow=-1e308 Vhigh=1e308
R5 3 2 3.6Meg noiseless
R6 2 6 3.6Meg noiseless
G6 0 N025 0 N013 250µ
G7 0 N009 0 N013 250µ
D14 N013 0 DCML
C1 INN INP 2p Rser=1k Rpar=40k noiseless
R10 3 7 10Meg noiseless
S7 6 3 _SHDN 0 SPOWR1
A10 0 INN 0 0 0 0 0 0 OTA g=0 in=550f ink=3.3k
D1 2 3 DESD
D4 6 2 DESD
D17 7 3 DESD
D18 6 7 DESD
B1 0 N004 I=10u*dnlim(uplim(V(INP),V(3)-1.3,.1), V(6)-.3, .1)+1n*V(INP)
B2 N004 0 I=10u*dnlim(uplim(V(INN),V(3)-1.29,.1), V(6)-.31, .1)+1n*V(INN)
C20 N004 0 1f Rpar=100K noiseless
C4 3 INN .1p Rser=1k Rpar=1G noiseless
C5 INP 6 .1p Rser=1k Rpar=1G noiseless
C6 INN 6 .1p Rser=1k Rpar=1G noiseless
B3 0 N024 I=10u*dnlim(uplim(V(2),V(3)-.4,.1), V(6)+.42, .1)
B4 N024 0 I=5u*(V(4)+V(5))
C30 N024 0 .1f Rpar=100K noiseless
B7 3 INN I=(272n+25n*V(INN,6))*(.5+.5*tanh((V(3,INN)-500m)/200m))+ 25n/dnlim(V(INN,6)+.06,.02,.01)
B8 3 INP I=(272n+25n*V(INP,6))*(.5+.5*tanh((V(3,INP)-500m)/200m))+ 25n/dnlim(V(INP,6)+.06,.02,.01)
D21 3 7 DSPU
R4 3 Mid 10Meg noiseless
D22 3 6 DPOW
S8 6 3 _SHDN 0 SPOWR2
R9 Mid 6 10Meg noiseless
M1 N010 N003 3 3 PI temp=27
M2 N016 N015 6 6 NI temp=27
D2 3 N003 DLIMP
D3 N015 6 DLIMN
B5 6 N015 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXP)+100m),300m/1e6,100n)
B6 N003 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXP)-100m),300m/1e6,100n)
D5 3 N021 DLIMP
D8 N026 6 DLIMN
G10 0 XXP N009 0 1µ
G11 0 XXN N025 0 1µ
C3 3 N003 .1f Rser=10Meg noiseless
C10 N015 6 .1f Rser=10Meg noiseless
C12 3 N021 .1f Rser=10Meg noiseless
C15 N026 6 .1f Rser=10Meg noiseless
G12 0 N014 4 Mid 100m
C14 N014 0 1p Rpar=10 noiseless
G13 0 N020 5 Mid 100m
C19 N020 0 1p Rpar=10 noiseless
R13 N010 4 3.333 noiseless
I1 4 N010 36m
R14 4 N016 3 noiseless
I2 N016 4 33m
M3 N023 N021 3 3 PI temp=27
M4 N027 N026 6 6 NI temp=27
R15 N023 5 3.333 noiseless
I3 5 N023 36m
R16 5 N027 3 noiseless
I4 N027 5 33m
B12 N021 3 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6-460n*(V(XXN)-100m),300m/1e6,100n)
B9 6 N026 I=(.5+.5*tanh((V(_SHDN)-500m)/200m))*dnlim(300m/1e6+460n*(V(XXN)+100m),300m/1e6,100n)
R17 4 5 2Meg noiseless
R1 INN 1 700
R2 INP 8 700
R3 4 INN 1.4K
R7 5 INP 1.4K
C18 1 6 2p Rser= 10 noiseless
C22 INN 6 7.9p Rser=10 noiseless
C2 3 4 4p Rpar=100Meg Rser=10 noiseless
G1 0 N007 N005 0 1m
C27 N007 0 800f Rpar=1k noiseless
C28 N008 0 21.2p Rpar=1k Rser=1.5k noiseless
G2 0 N008 N007 0 1m
C21 6 8 2p Rser= 10 noiseless
C23 6 INP 7.9p Rser=10 noiseless
C8 4 6 4p Rpar=100Meg Rser=10 noiseless
C9 3 5 4p Rpar=100Meg Rser=10 noiseless
C11 5 6 4p Rpar=100Meg Rser=10 noiseless
A3 0 N004 0 0 0 0 N005 0 OTA g=1m linear en=2.9n enk=4k Rout=1k Cout=6p Vlow=-230m Vhigh=230m epsilon=20m
L1 XXP 0 1.15 Rser=1.08Meg Rpar=13.3Meg
L2 XXN 0 1.15 Rser=1.08Meg Rpar=13.3Meg
C16 N009 N014 138p Rser=15 noiseless
C24 N020 N025 138p Rser=15 noiseless
A4 N008 0 0 0 0 0 N009 0 OTA g=20m iout=4.2m cout=1f Vhigh=1e308 Vlow=-1e308
A5 0 N008 0 0 0 0 N025 0 OTA g=20m iout=4.2m cout=1f Vhigh=1e308 Vlow=-1e308
.model DPOW D(Ron=190k Roff=1G Vfwd=1 epsilon=1 noiseless)
.model SPOWR1 SW(level=2 Ron=200 Roff=1g vt=.5 vh=-.1 ilimit=1.13m noiseless)
.model SPOWR2 SW(Ron=49k Roff=1G vt=.5 vh=-.1 noiseless)
.model DSPU D(Ron=100k Roff=1g Vfwd=100m epsilon=100m ilimit=10u noiseless)
.model DCML D(Ron=10 Roff=1k Vfwd=500m epsilon=10m Vrev=500m revepsilon=10m noiseless)
.model DLIM D(Ron=100 Roff=24.8Meg Vfwd=3 Vrev=3 epsilon=100m revepsilon=100m noiseless)
.model DESD D(Ron=100 Roff=1G Vfwd=.7 epsilon=.1 noiseless)
.model SHUT SW(Ron=1k Roff=100G vt=-.8 vh=-100m noiseless)
.model NI VDMOS(Vto=300m kp=50m ksubthres=100m Mtriode=2 lambda=.0001 noiseless)
.model PI VDMOS(Vto=-300m Kp=50m ksubthres=100m Mtriode=2.2 lambda=.0001 pchan noiseless)
.model DLIMN D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m  noiseless)
.model DLIMP D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m noiseless)
.ends LTC6363-2
*
.subckt LTC2058 1 2 3 4 5 6 7
A3 N010 N020 0 0 0 0 N019 0 SCHMITT Vt=1.3 Vh=0 trise=20u tfall=20u
C2 6 5 10p
S2 6 4 ON 0 SPOW2
R6 N010 1 10K noiseless
R8 N020 7 10K noiseless
A1 6 4 0 0 0 0 N012 0 SCHMITT Vt=4.75 Vh=50m tau=50u
A6 N012 0 0 0 N019 0 ON 0 AND trise=1u tfall=1u
C7 4 N010 100f
C8 4 N020 100f Rpar=100Meg noiseless
D8 4 1 DESDL
D9 4 7 DESDL
D10 1 6 DESDL
D11 7 6 DESDL
D12 2 3 DIN
S5 6 4 ON 0 SPOW1
C16 4 1 100f
C17 4 7 100f
C6 6 2 4p Rser=500 noiseless
D16 6 4 DPOW
C18 6 4 100p
D1 3 6 DESDH
D3 4 3 DESDH
D4 2 6 DESDH
D7 4 2 DESDH
S10 0 VInoi 6 4 Snoise
D19 6 N010 DP5U
D20 N020 4 DP75U
G2 0 N018 5 Mid 100m
R2 N018 0 10 noiseless
C10 N003 N018 3p Rser=10 noiseless
C11 N011 N018 50p Rser=18k noiseless
M1 5 PG 6 6 Pout temp=27
M2 5 NG 4 4 Nout temp=27
A4 0 N009 6 6 6 6 PG 6 OTA g=200n linear ref=-700m vlow=-5 vhigh=0
A5 0 N015 4 4 4 4 NG 4 OTA g=200n linear ref=700m vlow=0 vhigh=5
G1 0 N013 N004 0 1m
L1 N004 0 9.28m Rser=1.75K Rpar=2.33K noiseless
G4 0 N004 N003 0 192.3µ
C22 N003 0 1p Rser=400k noiseless
R12 6 PG 10Meg noiseless
C12 PG 5 .1f
C14 5 NG .1f
C19 N011 0 1p Rser=600Meg noiseless
A8 On 0 N013 N013 N013 N013 N015 N013 SCHMITT vt=.5 vh=0 trise=100n vlow=-5 vhigh=0
A9 On 0 N013 N013 N013 N009 N013 N013 SCHMITT vt=.5 vh=0 trise=100n vlow=0 vhigh=5
D2 N011 0 DLIMINT1
R3 6 Mid 7.2Meg noiseless
R14 Mid 4 7.2Meg noiseless
G5 0 N003 N011 0 3.74µ
D5 N003 0 DLIMINT2
S1 6 5 On 0 SoutLd1
S3 5 4 On 0 SoutLd2
C13 5 4 10p
D6 6 2 Dbias1
D13 3 4 Dbias1
D15 3 4 Dbias2
D14 2 4 Dbias2
C9 2 4 4p Rser=500 noiseless
C1 6 3 4p Rser=500 noiseless
C4 3 4 4p Rser=500 noiseless
C15 2 3 10p Rser=500 noiseless
C20 6 N010 100f Rpar=100Meg noiseless
D17 N020 N010 DZ
C21 N010 N020 100f
B1 0 N007 I=10u*dnlim(uplim(V(3),V(6)-1.4,.1), V(4)-0.3, .1)+1n*V(3) + 52.28f
B2 N007 0 I=10u*dnlim(uplim(V(2),V(6)-1.41,.1), V(4)-0.31, .1)+1n*V(2)
R4 NG 4 10Meg noiseless
C23 N007 0 1f Rpar=100k noiseless
GInoi 2 3 N006 0 1µ
C3 N006 0 4p Rpar=1Meg noiseless
G3 0 N006 VInoi 0 1µ
L2 N013 0 9.28m Rser=1.75K Rpar=2.33K noiseless
A2 0 N007 0 0 0 0 N008 0 OTA g=1u linear en= 9n*(1+(freq/35k)**2)*(1+(freq/75k)**2.3)/((1+(freq/50k)**4)) Rout=1Meg Cout=20f Vlow=-1e308 Vhigh=1e308
A7 N008 0 On 0 0 0 N011 0 OTA g=800u asym isrc=87u isink=-82u vlow=-1e308 vhigh=1e308
.model SPOW1 SW(level=2 Ron=500 Roff=1G vt=.5 vh=-.1 ilimit=518.05u noiseless)
.model SPOW2 SW(level=2 Ron=335K Roff=1G vt=.5 vh=-.1 noiseless)
.model DPOW D(Ron=10k Roff=1G vfwd=2 epsilon=500m ilimit=2.16u noiseless)
.model DP5U D(Ron=1k Roff=100Meg vfwd=100m epsilon=100m ilimit=.5u noiseless)
.model DP75U D(Ron=1k Roff=100Meg vfwd=100m epsilon=100m ilimit=.75u noiseless)
.model DZ D(Ron=100 Roff=1G vfwd=700m epsilon=500m vrev=5.15 revepsilon=100m noiseless)
.model Snoise SW(level=2  ron=2.5Meg Roff=180Meg vt=25 vh=-20)
.model DESDH D(Ron=100 Roff=500T vfwd=700m epsilon=700m noiseless)
.model DESDL D(Ron=100 Roff=1G vfwd=700m epsilon=700m noiseless)
.model DLIMINT1 D(Ron=100 Roff=100Meg vfwd=2.4 vrev=1.8 epsilon=20m revepsilon=20m noiseless)
.model DLIMINT2 D(Ron=100 Roff=100Meg vfwd=9.5 vrev=9.5 epsilon=20m revepsilon=20m noiseless)
.param CL = 1f
.model SoutLd1 SW(level=2 Ron=1k Roff=10G vt=.5 vh=100m ilimit=100u noiseless)
.model SoutLd2 SW(level=2 Ron=1k Roff=10G vt=.5 vh=100m ilimit=125u noiseless)
.model Dbias1 D(Ron=1Meg Roff=1T vfwd=0 epsilon=100m ilimit=30p noiseless)
.model Dbias2 D(Ron=10G Roff=1T vfwd=22 epsilon=2 ilimit=60p noiseless)
.model DIN D(Ron=500 Roff=225k vfwd=700m vrev=700m epsilon=500m revepsilon=500m noiseless)
.model Pout VDMOS(Vto=-1 Kp=3m mtriode=1.9  lambda=1m ksubthres=.1 Rb=10 pchan noiseless)
.model Nout VDMOS(Vto=1 Kp=5m lambda=1m ksubthres=.1 Rb=10 noiseless)
.ends LTC2058
*
* Copyright (c) 1998-2020 Analog Devices, Inc.  All rights reserved.
*
.subckt LT6372-1 1 2 3 4 5 6 7 8 9 10 11 12 13
G2 0 N002 N003 0 1m
C3 N002 0 27p Rpar=1k noiseless
C5 7 2 7.95p
C6 7 1 .1p
R1 A1out INNF 10k
CG4 7 6 1p
CG5 6 4 1p
M3 7 N002 A1out A1out NINT temp=27
M4 4 N002 A1out A1out PINT temp=27
M5 7 N017 A2out A2out NINT temp=27
M6 4 N017 A2out A2out PINT temp=27
G3 0 N017 N016 0 1m
C17 N017 0 27p Rpar=1k noiseless
C20 2 3 .9p
DB2 7 4 DP
C4 7 N003 180p Rpar=200Meg noiseless
A1 9 2X 0 0 0 0 N003 0 OTA g=30m iout=5m en=4.9n enk=2.5 Vhigh=1e308 Vlow=-1e308
G4 N003 0 N003 7 100m vto=-600m dir=1
G6 0 N003 4 N003 100m vto=-600m dir=1
A2 10 3X 0 0 0 0 N016 0 OTA g=30m iout=5m en=4.9n enk=2.5 Vhigh=1e308 Vlow=-1e308
D11 1 7 DESD
D12 4 1 DESD
D13 8 7 DESD
D14 4 8 DESD
C13 N003 4 180p Rpar=200Meg noiseless
C15 7 N016 180p Rpar=200Meg noiseless
C16 N016 4 180p Rpar=200Meg noiseless
C8 INNF INPF 100f
M1 N006 PG 7 7 PI temp=27
M2 6 NG 4 4 NI temp=27
D1 7 PG DLIMP
D2 NG 4 DLIMN
C10 7 PG 1f Rser=400k noiseless
C14 NG 4 1f Rser=400k noiseless
B5 4 NG I=dnlim(400n+.7u*(V(XC)+240m),400n,200n)
B6 PG 7 I=dnlim(400n-.7u*(V(XC)-240m),400n,200n)
R8 N006 6 1 noiseless
I1 6 N006 800m
R9 7 Mid 1Meg noiseless
B7 0 N010 I=10u*dnlim(uplim(V(INPF),V(7)-1.59,.1), V(4)-.2, .1)+1n*V(INPF)-31.5p
B8 N010 0 I=10u*dnlim(uplim(V(INNF),V(7)-1.60,.1), V(4)-.21, .1)+1n*V(INNF)
C18 N010 0 .1f Rpar=100K noiseless
C19 XC N011 10p
C21 XC 0 1p
D3 XC 0 DANTISAT
C22 N009 0 8p Rpar=1k noiseless
G5 0 N009 N008 0 1m
C26 N008 0 8p Rpar=1k noiseless
R11 N011 0 1 noiseless
G11 0 N011 6 Mid 1
A6 0 N009 0 0 0 0 XC 0 OTA g=250u iout=125u vlow=-1e308 vhigh=1e308
C25 7 A1out 100f
C27 A1out 4 100f
C28 7 A2out 100f
C29 A2out 4 100f
G1 0 N016 4 N016 100m vto=-600m dir=1
G7 N016 0 N016 7 100m vto=-600m dir=1
R10 Mid 4 1Meg noiseless
A7 N010 0 0 0 0 0 N008 0 OTA g=1m linear en=26n enk=1.1 vlow=-1e308 vhigh=1e308
C1 2 4 7.95p
C2 7 3 7.95p
C7 3 4 7.95p
A3 2 0 0 0 0 0 0 0 OTA g=0 in=93.4f ink=3
A8 3 0 0 0 0 0 0 0 OTA g=0 in=93.4f ink=3
A9 2 3 0 0 0 0 0 0 OTA g=0 incm=176.8f incmk=1.8
R13 A1out 1 12.1k
A10 N005 0 4 4 4 4 9 4 OTA g=200u iout=300u vlow=-1e309 vhigh=1e309
L3 N005 0 102.3µ Rser=4.5k Rpar=1.286k noiseless
C9 1 4 .1p
C11 7 8 .1p
C12 8 4 .1p
D4 2 7 DESD
D5 4 2 DESD
G9 0 N005 9 2X 1m
R14 2X 0 1k noiseless
I3 0 2X 600µ
R15 A2out 8 12.1k
A11 N013 0 4 4 4 4 10 4 OTA g=200u iout=300u vlow=-1e309 vhigh=1e309
L1 N013 0 102.3µ Rser=4.5k Rpar=1.286k noiseless
I4 0 3X 600µ
G15 0 N013 10 3X 1m
B9 0 2X I=999.9u*dnlim(uplim(V(2),V(7)-1.25,.1), V(4)+1.7, .1)+100n*V(2)
B10 0 3X I=999.9u*dnlim(uplim(V(3),V(7)-1.25,.1), V(4)+1.7, .1)+100n*V(3)
D6 4 5 DESD
R6 3X 0 1k noiseless
R2 INNF 6 10k
R3 A2out INPF 10k
R4 INPF 5 20k
D7 3 7 DESD
D8 4 3 DESD
D9 9 7 DESD
D10 4 9 DESD
C23 7 9 .1p
C24 9 4 .1p
D17 10 7 DESD
D18 4 10 DESD
C32 7 10 .1p
C33 10 4 .1p
D16 4 11 DESD
R7 INPF 11 20k
C30 CactH 0 1p Rpar=3k noiseless
G8 0 CactH 6 12 1m
S1 CactH 0 12 7 SCLMPOH
S2 0 CactH 4 12 SCLMPOL
S3 4 6 CactH 0 SCLMP1
S4 0 XC CactH 0 SCLMP2
C31 CactL 0 1p Rpar=3k noiseless
S5 CactL 0 13 7 SCLMPOH
S6 0 CactL 4 13 SCLMPOL
G10 0 CactL 13 6 1m
S7 6 7 CactL 0 SCLMP1
S8 0 XC CactL 0 SCLMP2
M7 4 PG 7 7 PI temp=27 M=.4
D15 INNF INPF DSI temp=27
D19 INPF INNF DSI temp=27
R16 7 12 1G
R17 7 13 1G
R18 12 4 1G
R19 13 4 1G
.model DP D(Ron=100 Roff=1G Vfwd=.6 epsilon=500m ilimit=1.15m noiseless)
.model NINT VDMOS(Vto=-40m Kp=100m noiseless)
.model PINT  VDMOS(Vto=40m Kp=100m pchan noiseless)
.model DESD D(Ron=100 Roff=400G vfwd=600m epsilon=500m noiseless)
.model PI VDMOS(Vto=-300m kp=30m  mtriode=.3  ksubthres=10m  lambda=5e-4 pchan noiseless)
.model NI VDMOS(Vto=300m kp=25m mtriode=.4  ksubthres=10m  lambda=5e-4 noiseless)
.model DANTISAT D(Ron=100 Roff=25.5Meg vfwd=3 epsilon=100m vrev=3 revepsilon=100m noiseless)
.model DLIMN D(Ron=1k Roff=1Meg Vfwd=2.3  epsilon=100m  noiseless)
.model DLIMP D(Ron=1k Roff=1Meg Vfwd=2  epsilon=100m noiseless)
.model DSI D(Is=1e-16 TT=200n noiseless)
.param RG= 100T
.model SCLMPOH SW(Ron=1 Roff=3k vt=-1.8 vh=-200m noiseless)
.model SCLMPOL SW(Ron=1 Roff=3k vt=-1.3 vh=-200m noiseless)
.model SCLMP1 SW(level=2 Ron=100 Roff=100Meg vt=455m vh=-10m noiseless)
.model SCLMP2 SW(level=2 Ron=1 Roff=300Meg vt=450m vh=-10m noiseless)
.ends LT6372-1