185 lines
5.5 KiB
Plaintext
185 lines
5.5 KiB
Plaintext
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*******************************************************************
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******STMicroelectronics MOSFET, IGBT and Bipolar Library *********
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*******************************************************************
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* *
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* Models provided by STMicroelectronics are not guaranteed to *
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* fully represent all the specifications and operating *
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* characteristics of the product behavior that they reproduce. *
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* The model describes the characteristics of a typical device. *
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* In all cases, the current product data sheet contains all *
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* information to be used like final design guidelines and the *
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* only actual performance specification. *
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* Altough models can be a useful tool in evaluating device *
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* performance, they cannot model exact device performance under *
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* all conditions. *
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* STMicroelectronics therefore does not assume any *
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* responsibility arising from their use. *
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* STMicroelectronics reserves the right to change models *
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* without prior notice. *
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* *
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* Note: The model doesn't take into account the drain, gate, *
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* source inductances.If these contributions have to be *
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* considered it is possible include the inductors externally. *
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* For this package the values can be estimated as follow *
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* *
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* Ldrain= 1nH ,Lsource=2nH and Lgate=2.5nH *
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* *
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* Rev 2.0 - 10 April 2013 *
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*******************************************************************
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.SUBCKT STL3N10F7_V2 1 2 3
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*******************************************************************
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E1 Tj val_T VALUE={TEMP}
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R1 val_T 0 1E-03
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***********************************************************
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Rtk Tj 0 1E10
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Rtk1 Tj 0 1E10
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************************************
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VLd 1 d1k 0
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VLs ss 3 0
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VLG 2 g2 0
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rg1 g2 g {rg}
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Rdsx s dx 100k
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Cdx dx d 50p
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*******************************************************************
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.PARAM Area=1 BVDSS=1 raval=121m
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***************************************************
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.PARAM rg=1.85 Vth0=4 drs=10u
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.PARAM lambda=0.001
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.PARAM kpsat0=3.3 kplin0=20
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.PARAM rd=53.6m
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.PARAM rpa=1E-05
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***********************************
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.PARAM unt =-1.8 vthx=4.5m ksat=-1 klin=-1
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.PARAM a=1 b=1 Rx=1.1
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.param rr=1
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***********************************************************
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.FUNC r_s(T) {drs*((T+273)/300)**(rr)}
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.FUNC vth1(x) {vth0-vthx*(x-27)}
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.FUNC kpsat(x) {kpsat0*((x+273)/300)**(ksat)}
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.FUNC kplin(x) {kplin0*((x+273)/300)**(klin)}
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.FUNC un(T) {b*((T+273)/300)**(unt)}
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***********************************************************
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***********************************************************
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Gmos d s value {Area*(IF(V(d,s)>0,(IF(v(g,s)<vth1(V(TJ)),0,
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+(IF((V(d,s)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(d,s))*kplin(v(TJ))/2*v(d,s)*
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+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(d,s)),
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+(1+LAMBDA*v(d,s))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2)))),-(IF(v(g,s)<vth1(V(TJ)),0,
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+(IF((V(s,d)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(s,d))*kplin(v(TJ))/2*v(s,d)*
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+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(s,d)),
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+(1+LAMBDA*v(s,d))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2))))))}
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G_RMos d1k dd VALUE={Area*((un(V(TJ))*(V(d1k,d)))/(rd+rpa*((I(V_sense)**a))**Rx))}
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G_rs s ss VALUE={v(s,ss)/(r_s(V(TJ)))}
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R_Grs s ss 1E03
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R_Rmos d1k dd 1E03
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V_sense dd d 0
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***********************************************************
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rdd dd 0 1E10
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rdd1 d 0 1E10
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rdd3 s 0 1E10
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R_DS d s 1E10
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***********************************************************
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CGS g 3 {518p*Area}
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R_CGS g 3 500E06
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***********************************************************
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Cref 40 0 1E-12
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E2 40 50 value {V(g,d1k)}
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V2 50 0 0
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Gcdg d1k g value {Area*V(alfa)*i(V2)*1E12}
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Rcap 0 alfa 1E03
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Ecap alfa 0 TABLE = {V(d1k,ss)}
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+(0.1,231p)
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+(0.2,212p)
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+(0.5,203p)
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+(1,182p)
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+(2,135p)
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+(3,79p)
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+(5,71p)
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+(7,49p)
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+(10,32p)
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+(15,25p)
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+(25,18p)
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+(35,14p)
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+(50,10p)
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+(60,8p)
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+(70,7p)
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+(80,6p)
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+(90,6p)
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+(100,6p)
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***********************************************************
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Cref2 402 0 1E-12
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E22 402 502 value {V(ss,d1k)}
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V22 502 0 0
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Gcdg2 d1k ss value {0.5*Area*V(alfa2)*i(V22)*1E12}
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Rcap2 0 alfa2 100E03
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Ecap2 alfa2 0 TABLE = {V(d1k,ss)}
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+(0.1,356p)
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+(0.2,347p)
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+(0.5,321p)
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+(1,292p)
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+(2,261p)
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+(3,243p)
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+(5,222p)
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+(7,208p)
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+(10,193p)
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+(15,175p)
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+(25,152p)
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+(35,135p)
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+(50,112p)
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+(60,94p)
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+(70,66p)
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+(80,52p)
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+(90,47p)
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+(100,44p)
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***********************************************************
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***********************************************************
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R_bvdss d1k d1bvdss1 {raval}
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V_bvdss d1bvdss1 d1bvdss2 0
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G_bvd d1bvdss2 ss VALUE={I_BVDSS(V(d1bvdss2,ss),v(Tj))}
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R_GBDSS d1bvdss2 0 1E10
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.FUNC I_BVDSS(z,k1) {(exp(min(-175+z/(bvd(k1)),7))-10E-12)}
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***********************************************************
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.FUNC bvd(k) {0.62*BVDSS+0.00031*k}
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***********************************************************
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.FUNC Rdiodo(rdid) {rdid0*((rdid+273)/300)**(rdid_temp)}
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.PARAM rdid0={1.5/Area} rdid_temp=1.5
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G_R_didd d1k d1z VALUE={200*(V(d1k,d1z)/Rdiodo(V(TJ)))}
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R_G_R_didd d1k d1z {1/Area}
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V_diodo d1zd d1z 0
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G_diode 3 d1zd VALUE={I_diode(V(3,d1zd),v(Tj))}
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R_x 3 d1zd 1E9
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.FUNC I_diode(z3,k3) {(exp(min(-15+z3/(did(k3)),7))-100n)}
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.FUNC did(k4) {0.066-91E-06*k4}
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***********************************************************
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R_R003 aa 0 500E06
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R_edep d1k d_dedep 75
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E_Eds d_dedep edep VALUE {-V(aa,0)*1k}
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C_Cds edep ss {16E-12*Area}
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E_E001 ba 0 VALUE {-I(V_diodo)*(0.0016*v(Tj)+1)}
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R_R001 aa ba 35
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C aa 0 19p
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***********************************************************
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.ENDS STL3N10F7_V2
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* END OF MODELLING
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