92 lines
3.0 KiB
Plaintext
92 lines
3.0 KiB
Plaintext
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* Copyright <20> Analog Devices, Inc. 2019. All rights reserved.
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*
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.subckt ADP16xa 1 2 3 4 5
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M1 4 N003 1 1 P
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D1 2 4 S
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A1 N005 5 1 1 1 1 N003 1 OTA G=4.55u Iout=3u en=60n enk=20k Vhigh=0 Vlow=-1
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C4 1 N003 320p Rpar=53MEG Rser=671k Cpar=0.5p noiseless
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M2 2 N003 1 1 P m=333u
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R4 N006 N005 350K noiseless
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C2 1 N005 100f Rser=100MEG Rpar=3G noiseless
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C3 4 2 20p
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C6 1 2 20p
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A2 3 2 2 2 2 2 N008 2 SCHMITT Vt=800m Vh=400m Trise=1u
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A3 1 2 2 2 2 2 N004 2 SCHMITT Vt=1.895 Vh=295m Trise=1u
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A4 2 N004 2 N008 2 2 N006 2 AND Cout=100p Rhigh=3Meg Rlow=100k
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C5 3 2 1p
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G1 1 2 N004 2 50n
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G2 1 2 N006 2 525n
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.model P VDMOS( pchan Kp=10 Ksubthres=10m Vto=-750m mtriode=600m lambda=50m noiseless)
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.model S D(Ron=10 Roff=1G epsilon=1)
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.model DIS SW(Roff=300 Ron=1G Vt=0.5 Vh=-0.4)
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.ends ADP16xa
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*
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.subckt ADP16xad 1 2 3 4 5
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M1 4 N003 1 1 P
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D1 2 4 S
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A1 N005 5 1 1 1 1 N003 1 OTA G=4.55u Iout=3u en=60n enk=20k Vhigh=0 Vlow=-1
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C4 1 N003 320p Rpar=53MEG Rser=671k Cpar=0.5p noiseless
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M2 2 N003 1 1 P m=333u
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R4 N006 N005 350K noiseless
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C2 1 N005 100f Rser=100MEG Rpar=3G noiseless
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C3 4 2 20p
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C6 1 2 20p
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A2 3 2 2 2 2 2 N008 2 SCHMITT Vt=800m Vh=400m Trise=1u
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S1 4 2 N006 2 DIS
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A3 1 2 2 2 2 2 N004 2 SCHMITT Vt=1.895 Vh=295m Trise=1u
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A4 2 N004 2 N008 2 2 N006 2 AND Cout=100p Rhigh=3Meg Rlow=100k
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C5 3 2 1p
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G1 1 2 N004 2 50n
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G2 1 2 N006 2 525n
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.model P VDMOS( pchan Kp=10 Ksubthres=10m Vto=-750m mtriode=600m lambda=50m noiseless)
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.model S D(Ron=10 Roff=1G epsilon=1)
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.model DIS SW(Roff=300 Ron=1G Vt=0.5 Vh=-0.4)
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.ends ADP16xad
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*
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.subckt ADP16xf 1 2 3 4
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M1 4 N003 1 1 P
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D1 2 4 S
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A1 N005 N006 1 1 1 1 N003 1 OTA G=4.55u Iout=3u en=60n enk=20k Vhigh=0 Vlow=-1
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C4 1 N003 320p Rpar=53MEG Rser=671k Cpar=0.5p noiseless
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M2 2 N003 1 1 P m=333u
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R4 N007 N005 350K noiseless
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C2 1 N005 100f Rser=100MEG Rpar=3G noiseless
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C3 4 2 20p
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C6 1 2 20p
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A2 3 2 2 2 2 2 N008 2 SCHMITT Vt=800m Vh=400m Trise=1u
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A3 1 2 2 2 2 2 N004 2 SCHMITT Vt=1.895 Vh=295m Trise=1u
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A4 2 N004 2 N008 2 2 N007 2 AND Cout=100p Rhigh=3Meg Rlow=100k
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C5 3 2 1p
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G1 1 2 N004 2 50n
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G2 1 2 N007 2 525n
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G3 2 N006 4 2 {K}
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C7 N006 2 1p Rpar=1k
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.model P VDMOS( pchan Kp=10 Ksubthres=10m Vto=-750m mtriode=600m lambda=50m noiseless)
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.model S D(Ron=10 Roff=1G epsilon=1)
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.model DIS SW(Roff=300 Ron=1G Vt=0.5 Vh=-0.4)
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.ends ADP16xf
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*
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.subckt ADP16xfd 1 2 3 4
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M1 4 N003 1 1 P
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D1 2 4 S
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A1 N005 N006 1 1 1 1 N003 1 OTA G=4.55u Iout=3u en=60n enk=20k Vhigh=0 Vlow=-1
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C4 1 N003 320p Rpar=53MEG Rser=671k Cpar=0.5p noiseless
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M2 2 N003 1 1 P m=333u
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R4 N007 N005 350K noiseless
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C2 1 N005 100f Rser=100MEG Rpar=3G noiseless
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C3 4 2 20p
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C6 1 2 20p
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A2 3 2 2 2 2 2 N008 2 SCHMITT Vt=800m Vh=400m Trise=1u
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S1 4 2 N007 2 DIS
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A3 1 2 2 2 2 2 N004 2 SCHMITT Vt=1.895 Vh=295m Trise=1u
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A4 2 N004 2 N008 2 2 N007 2 AND Cout=100p Rhigh=3Meg Rlow=100k
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C5 3 2 1p
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G1 1 2 N004 2 50n
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G2 1 2 N007 2 525n
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G3 2 N006 4 2 {K}
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C7 N006 2 1p Rpar=1k
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.model P VDMOS( pchan Kp=10 Ksubthres=10m Vto=-750m mtriode=600m lambda=50m noiseless)
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.model S D(Ron=10 Roff=1G epsilon=1)
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.model DIS SW(Roff=300 Ron=1G Vt=0.5 Vh=-0.4)
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.ends ADP16xfd
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